{"id":6855,"date":"2026-06-22T01:38:27","date_gmt":"2026-06-22T01:38:27","guid":{"rendered":"https:\/\/materialparts.com\/mjd31ct4g\/"},"modified":"2026-06-22T01:38:27","modified_gmt":"2026-06-22T01:38:27","slug":"mjd31ct4g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/mjd31ct4g\/","title":{"rendered":"MJD31CT4G"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The MJD31CT4G from onsemi is a 3A, 100V NPN complementary power transistor in a DPAK (TO-252) surface mount package, electrically similar to the TIP31C.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Tipo<\/td>\n<td>NPN Complementary Power Transistor<\/td>\n<\/tr>\n<tr>\n<td>Polarity<\/td>\n<td>NPN<\/td>\n<\/tr>\n<tr>\n<td>VCEO<\/td>\n<td>100 V<\/td>\n<\/tr>\n<tr>\n<td>IC (continuous)<\/td>\n<td>3 A<\/td>\n<\/tr>\n<tr>\n<td>IC (peak)<\/td>\n<td>5 A<\/td>\n<\/tr>\n<tr>\n<td>PD (TC=25C)<\/td>\n<td>15 W<\/td>\n<\/tr>\n<tr>\n<td>PD (TA=25C)<\/td>\n<td>1.56 W<\/td>\n<\/tr>\n<tr>\n<td>hFE (min)<\/td>\n<td>10 @ IC=3A, VCE=4V<\/td>\n<\/tr>\n<tr>\n<td>hFE (max)<\/td>\n<td>50 @ IC=1A, VCE=4V<\/td>\n<\/tr>\n<tr>\n<td>VCE(sat)<\/td>\n<td>1.2 V (max) @ IC=3A, IB=375mA<\/td>\n<\/tr>\n<tr>\n<td>VBE(on)<\/td>\n<td>1.8 V (max) @ IC=3A<\/td>\n<\/tr>\n<tr>\n<td>fT<\/td>\n<td>3 MHz (min)<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>DPAK \/ TO-252-3<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-65C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>3A continuous collector current<\/li>\n<li>100V VCEO (MJD31C version)<\/li>\n<li>15W power dissipation at TC=25C<\/li>\n<li>DPAK surface mount package<\/li>\n<li>Electrically similar to TIP31C<\/li>\n<li>Complementary PNP: MJD32CT4G<\/li>\n<li>AEC-Q101 qualified (NJV prefix versions)<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>General-purpose audio amplifiers<\/li>\n<li>Low-speed power switching<\/li>\n<li>Motor driver output stage<\/li>\n<li>Power supply regulator pass transistor<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The MJD31CT4G from onsemi is a 3A, 100V NPN complementary power transistor in a DPAK (TO-252) surface mount package, electrically similar to the TIP31C. Key Specifications Type NPN Complementary Power Transistor Polarity NPN VCEO 100 V IC (continuous) 3 A IC (peak) 5 A PD (TC=25C) 15 W PD (TA=25C) 1.56 W hFE [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[144],"class_list":["post-6855","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"3A 100V NPN Power Transistor, DPAK, TIP31C Equivalent","date_code":"","package_case":"DPAK \/ TO-252-3 (6.6 x 6.0 x 2.3 mm)","in_stock":23456,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/mjd31-d.pdf","price":"$0.18 @ 1ku","product_introduction":"The MJD31CT4G from onsemi is an NPN complementary power transistor in a DPAK (TO-252) surface mount package, rated at 3A and 100V. The device is electrically similar to the industry-standard through-hole TIP31C, providing a surface-mount alternative for the same circuit topologies. The 100V VCEO covers 24V and 48V industrial systems with adequate margin. The 15W power dissipation at case temperature of 25C requires proper PCB copper area for heat sinking. The complementary PNP device (MJD32CT4G) enables push-pull amplifier and bridge motor drive configurations. The T4G suffix indicates tape and reel packaging in a DPAK with formed leads. AEC-Q101 qualified versions are available with the NJV prefix for automotive applications.","working_principle":"The MJD31CT4G is a vertical NPN bipolar junction transistor (BJT) constructed using a planar epitaxial process. The N-type epitaxial layer forms the collector region on an N+ substrate. The P-type base and N+ emitter are diffused into the epitaxial layer. Current flow is vertical from emitter (top) through the base and epitaxial collector to the collector (die pad). When forward base current (IB) is applied, minority carriers (holes) are injected from the base into the emitter region, modulating the emitter-base junction conductivity. The collector current (IC) is amplified by the DC current gain (hFE), which ranges from 10 to 50 depending on the operating point. The 3 MHz transition frequency (fT) limits the useful bandwidth for amplifier applications. The VCE(sat) of 1.2V at 3A represents the power dissipation in the saturated switching state: P = IC x VCE(sat) = 3.6W. The DPAK package connects the collector to the large die pad for efficient heat transfer to the PCB copper.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Base<\/td><td>Input<\/td><td>Base terminal<\/td><\/tr><tr><td>2<\/td><td>Collector<\/td><td>I\/O<\/td><td>Collector (tab\/die pad is also collector)<\/td><\/tr><tr><td>3<\/td><td>Emitter<\/td><td>I\/O<\/td><td>Emitter terminal<\/td><\/tr><tr><td>Tab<\/td><td>Collector<\/td><td>I\/O<\/td><td>Collector (die pad, solder to PCB)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>24V DC motor H-bridge driver with complementary MJD32CT4G PNP<\/li><li>Audio power amplifier output stage in Class AB push-pull configuration<\/li><li>Linear voltage regulator pass transistor with 15W dissipation capability<\/li><li>Solenoid driver low-side switch with 3A current rating<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>onsemi<\/td><td>MJD31CG<\/td><td>DPAK-3<\/td><td>Same device, tube packaging<\/td><\/tr><tr><td>onsemi<\/td><td>NJVMJD31CT4G<\/td><td>DPAK-3<\/td><td>AEC-Q101 automotive version<\/td><\/tr><tr><td>ST<\/td><td>BDX53C<\/td><td>DPAK<\/td><td>Similar 100V NPN in DPAK<\/td><\/tr><tr><td>onsemi<\/td><td>MJD32CT4G<\/td><td>DPAK-3<\/td><td>Complementary PNP device<\/td><\/tr><tr><td>onsemi<\/td><td>MJD31CT1G<\/td><td>IPAK<\/td><td>Same die, IPAK through-hole<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6855","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6855"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6855\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6855"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6855"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6855"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6855"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}