{"id":6748,"date":"2026-06-21T10:13:19","date_gmt":"2026-06-21T10:13:19","guid":{"rendered":"https:\/\/materialparts.com\/nce7560k\/"},"modified":"2026-06-21T10:13:19","modified_gmt":"2026-06-21T10:13:19","slug":"nce7560k","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/nce7560k\/","title":{"rendered":"NCE7560K"},"content":{"rendered":"

Productos<\/h2>\n

The NCE7560K from NCEPower is a 60 V N-channel enhancement-mode power MOSFET with 5.5 mOhm on-resistance and 75 A drain current in a TO-252 (DPAK) package. It uses advanced trench technology for low RDS(on) and is designed for high-efficiency switching applications in battery-powered and power management systems.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo<\/td>\nN-Channel Enhancement Mode MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n60 V<\/td>\n<\/tr>\n
VGS<\/td>\n\u00b120 V<\/td>\n<\/tr>\n
RDS(on) (VGS=10V)<\/td>\n5.5 mOhm (max)<\/td>\n<\/tr>\n
RDS(on) (VGS=4.5V)<\/td>\n7.0 mOhm (max)<\/td>\n<\/tr>\n
Continuous Drain Current (TC=25\u00b0C)<\/td>\n75 A<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n1.0-2.5 V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n68 nC (typical)<\/td>\n<\/tr>\n
Power Dissipation (TC=25\u00b0C)<\/td>\n100 W<\/td>\n<\/tr>\n
Paquete<\/td>\nTO-252 (DPAK-3)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to 150\u00b0C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Advanced trench technology for ultra-low RDS(on)<\/li>\n
  • 5.5 mOhm maximum on-resistance at VGS=10V<\/li>\n
  • 75 A continuous drain current capability<\/li>\n
  • Low gate threshold voltage for logic-level drive<\/li>\n
  • Fast switching speed<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Battery management and protection circuits<\/li>\n
    • DC-DC converter power stages<\/li>\n
    • Motor drive H-bridge applications<\/li>\n
    • Load switching in power distribution<\/li>\n
    • Inverter and UPS systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NCE7560K from NCEPower is a 60 V N-channel enhancement-mode power MOSFET with 5.5 mOhm on-resistance and 75 A drain current in a TO-252 (DPAK) package. It uses advanced trench technology for low RDS(on) and is designed for high-efficiency switching applications in battery-powered and power management systems. Key Specifications Type N-Channel Enhancement Mode […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[300],"class_list":["post-6748","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-ncepower"],"acf":{"brief_explanation":"N-Channel 60V 75A MOSFET, 5.5mOhm, TO-252 DPAK, trench technology","date_code":"","package_case":"TO-252 (DPAK-3, 6.5 x 5.5 mm)","in_stock":8901,"datasheet":"https:\/\/www.ncepower.com\/uploads\/pdf\/NCE7560K.pdf","price":"$0.82 @ 1ku","product_introduction":"The NCE7560K from NCEPower is a 60 V N-channel enhancement-mode power MOSFET utilizing advanced trench technology to achieve ultra-low 5.5 mOhm on-resistance at VGS=10V. The device is rated for 75 A continuous drain current and 100 W power dissipation in a TO-252 (DPAK) surface-mount package. The low gate threshold voltage (1.0-2.5V) enables logic-level drive compatibility. The device is designed for high-efficiency switching in battery management, DC-DC conversion, motor drive, and power distribution applications. It is RoHS compliant and suitable for automotive and industrial power systems.","working_principle":"The NCE7560K is an enhancement-mode N-channel trench MOSFET. When a positive gate-source voltage exceeding the threshold (1.0-2.5V) is applied, an inversion layer forms in the trench channels, creating a conductive path between drain and source. The trench cell structure maximizes channel density, enabling the ultra-low 5.5 mOhm on-resistance. Current flows from drain to source through the vertical MOSFET structure. The low RDS(on) minimizes conduction losses (I\u00b2R), making the device efficient for high-current switching applications. During turn-off, the gate charge (68 nC typical) must be removed by the gate driver. The body diode provides reverse current conduction during switching transients.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Reference<\/td>MOSFET source<\/td><\/tr>
      Tab<\/td>Drain<\/td>Output<\/td>Drain connection (heatsink mount)<\/td><\/tr><\/table>","application_scenarios":"
      • Battery BMS and protection circuits for Li-ion packs<\/li>
      • DC-DC buck and boost converter power stages<\/li>
      • BLDC motor drive half-bridge and H-bridge circuits<\/li>
      • Load switch and power distribution in automotive systems<\/li>
      • Inverter and UPS high-current switching stages<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRLML6344TRPBF<\/td>SOT-23<\/td>30V, 3.6A, much smaller package<\/td><\/tr>
        Vishay<\/td>SI7860DP-T1-GE3<\/td>PowerPAK SO-8<\/td>60V, 30A, 7.5mOhm<\/td><\/tr>
        Alpha & Omega<\/td>AON7534<\/td>DFN 5x6<\/td>60V, 50A, 4.8mOhm<\/td><\/tr>
        onsemi<\/td>NTMFS4H602NT1G<\/td>DFN 5x6<\/td>60V, 90A, 2.5mOhm<\/td><\/tr>
        NCEPower<\/td>NCE7560KA<\/td>TO-252<\/td>AEC-Q101 automotive qualified<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6748","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6748"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6748\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6748"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6748"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6748"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6748"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}