{"id":6706,"date":"2026-06-19T01:31:50","date_gmt":"2026-06-19T01:31:50","guid":{"rendered":"https:\/\/materialparts.com\/fdd86102lz\/"},"modified":"2026-06-19T01:31:50","modified_gmt":"2026-06-19T01:31:50","slug":"fdd86102lz","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/fdd86102lz\/","title":{"rendered":"FDD86102LZ"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The FDD86102LZ from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V\/8A (TA) with logic-level gate threshold in a DPAK-3 (TO-252) package. As the low-threshold variant of the FDD86102, it features 22.5 m\u03a9 max RDS(on) at VGS=10V with lower VGS(th), enabling direct drive from 5V logic. Ideal for applications requiring 100V blocking with microcontroller-driven gate control.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Channel Type<\/td>\n<td>N-channel enhancement mode<\/td>\n<\/tr>\n<tr>\n<td>VDS (max)<\/td>\n<td>100V<\/td>\n<\/tr>\n<tr>\n<td>ID (max)<\/td>\n<td>8A @ TA=25\u00b0C; 36A @ TC=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) @ VGS=10V<\/td>\n<td>22.5 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>VGS(th) (max)<\/td>\n<td>Lower than FDD86102 (logic level)<\/td>\n<\/tr>\n<tr>\n<td>VGS (max)<\/td>\n<td>\u00b120V<\/td>\n<\/tr>\n<tr>\n<td>QG @ VGS=10V<\/td>\n<td>18 nC typical<\/td>\n<\/tr>\n<tr>\n<td>QG @ VGS=4.5V<\/td>\n<td>8.7 nC typical<\/td>\n<\/tr>\n<tr>\n<td>CISS<\/td>\n<td>1157 pF typical @ VDS=50V<\/td>\n<\/tr>\n<tr>\n<td>Rise Time<\/td>\n<td>2.3 ns typical<\/td>\n<\/tr>\n<tr>\n<td>Fall Time<\/td>\n<td>2.3 ns typical<\/td>\n<\/tr>\n<tr>\n<td>Turn-On Delay<\/td>\n<td>6.6 ns typical<\/td>\n<\/tr>\n<tr>\n<td>Turn-Off Delay<\/td>\n<td>20 ns typical<\/td>\n<\/tr>\n<tr>\n<td>Ptot<\/td>\n<td>3.1W @ TA=25\u00b0C; 62W @ TC=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-55\u00b0C to +150\u00b0C (junction)<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>DPAK-3 \/ TO-252-3 (SC-63)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Logic-level gate threshold \u2014 directly drivable from 5V MCU<\/li>\n<li>Shielded Gate PowerTrench technology for low RDS(on) and QGD<\/li>\n<li>100V rating with 22.5 m\u03a9 RDS(on) at 10V gate drive<\/li>\n<li>Very fast switching: 2.3 ns rise\/fall time<\/li>\n<li>Low gate charge at 4.5V: 8.7 nC for low driving loss<\/li>\n<li>100% UIL tested for ruggedness<\/li>\n<li>Industry-standard DPAK-3 package<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>MCU-driven 48V DC-DC converters<\/li>\n<li>Motor drive with direct logic-level gate control<\/li>\n<li>Power supply switching with 5V gate drive<\/li>\n<li>Load switching in 48V automotive and telecom systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FDD86102LZ from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V\/8A (TA) with logic-level gate threshold in a DPAK-3 (TO-252) package. As the low-threshold variant of the FDD86102, it features 22.5 m\u03a9 max RDS(on) at VGS=10V with lower VGS(th), enabling direct drive from 5V logic. Ideal for applications requiring 100V [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,24],"tags":[],"chip_brand":[182],"class_list":["post-6706","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-microcontrollers-processors","chip_brand-onsemi"],"acf":{"brief_explanation":"N-ch logic-level MOSFET, 100V, 8A, 22.5m\u03a9, DPAK-3","date_code":"","package_case":"DPAK-3 \/ TO-252-3 \/ SC-63 (6.54\u00d76.1\u00d72.29 mm)","in_stock":20000,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdd86102l-d.pdf","price":"$0.69 @ 1ku","product_introduction":"The FDD86102LZ from onsemi is the logic-level variant of the FDD86102 N-Channel Shielded Gate PowerTrench MOSFET, rated at 100V\/8A with 22.5 m\u03a9 max RDS(on) in a DPAK-3 package. With lower VGS(th) enabling direct 5V MCU drive, 8.7 nC gate charge at 4.5V, and 2.3 ns rise\/fall time, it is ideal for MCU-driven 48V DC-DC converters, motor drives, and power switching without dedicated gate drivers.","working_principle":"The FDD86102LZ uses the same Shielded Gate PowerTrench technology as the FDD86102 but with a logic-level gate threshold optimization. The shield electrode between gate and drain reduces gate-drain charge (QGD) for low switching losses. The 'LZ' suffix indicates a lower VGS(th) that enables full enhancement at VGS=4.5V to 5V, allowing direct microcontroller GPIO drive without a dedicated gate driver IC. At VGS=4.5V, the gate charge is only 8.7 nC, ensuring minimal driving loss even from low-current MCU outputs. The 2.3 ns rise\/fall time indicates extremely fast switching capability for high-frequency applications. The 100V breakdown voltage supports 48V bus systems with adequate margin for transients.","pin_description":"<table>\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr>\n<tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>Gate terminal (logic-level compatible)<\/td><\/tr>\n<tr><td>2<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal<\/td><\/tr>\n<tr><td>3 (tab)<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to exposed tab)<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li>MCU-driven 48V DC-DC converters without gate driver ICs<\/li>\n<li>Motor drive with direct 5V logic-level gate control<\/li>\n<li>Power supply switching with microcontroller PWM output<\/li>\n<li>48V automotive and telecom load switching<\/li>\n<\/ul>","alternative_models":"<table>\n<tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr>\n<tr><td>onsemi<\/td><td>FDD86102<\/td><td>DPAK-3<\/td><td>Standard threshold version (4V VGSth max)<\/td><\/tr>\n<tr><td>onsemi<\/td><td>FDB86102LZ<\/td><td>D2PAK-3<\/td><td>Higher power D2PAK package, logic level<\/td><\/tr>\n<tr><td>onsemi<\/td><td>FDD86102L<\/td><td>DPAK-3<\/td><td>Alternate logic-level ordering code<\/td><\/tr>\n<tr><td>Infineon<\/td><td>IPD50N10S2L-23<\/td><td>DPAK<\/td><td>100V, 23 m\u03a9, logic level, comparable<\/td><\/tr>\n<tr><td>Vishay<\/td><td>IRFR3710ZPBF<\/td><td>DPAK<\/td><td>100V, 22 m\u03a9, alternative<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6706","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6706"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6706\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6706"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6706"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6706"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6706"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}