{"id":6609,"date":"2026-06-18T15:38:24","date_gmt":"2026-06-18T15:38:24","guid":{"rendered":"https:\/\/materialparts.com\/irfz44n-2\/"},"modified":"2026-06-18T15:38:24","modified_gmt":"2026-06-18T15:38:24","slug":"irfz44n-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irfz44n-2\/","title":{"rendered":"IRFZ44N"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IRFZ44N is an N-channel power MOSFET from Infineon Technologies (originally International Rectifier). It features a 55V drain-source voltage rating and 49A continuous drain current with very low on-resistance of 17.5 m\u03a9. Packaged in a through-hole TO-220, it is widely used for switching and motor drive applications requiring high current handling and low conduction losses.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Tipo<\/td>\n<td>N-Channel MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS (Drain-Source Voltage)<\/td>\n<td>55V<\/td>\n<\/tr>\n<tr>\n<td>VGS (Gate-Source Voltage)<\/td>\n<td>\u00b120V<\/td>\n<\/tr>\n<tr>\n<td>ID (Continuous Drain Current)<\/td>\n<td>49A<\/td>\n<\/tr>\n<tr>\n<td>RDS(ON)<\/td>\n<td>17.5 m\u03a9 (typical at VGS=10V)<\/td>\n<\/tr>\n<tr>\n<td>Gate Threshold Voltage<\/td>\n<td>2.0V to 4.0V<\/td>\n<\/tr>\n<tr>\n<td>Gate Charge<\/td>\n<td>65 nC (typical)<\/td>\n<\/tr>\n<tr>\n<td>Power Dissipation<\/td>\n<td>110W (at TC=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>Rise Time<\/td>\n<td>60 ns (typical)<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-55\u00b0C to +175\u00b0C (junction)<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>TO-220AB<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Ultra-low on-resistance: 17.5 m\u03a9 for minimal conduction losses<\/li>\n<li>High current capability: 49A continuous<\/li>\n<li>Logic-level gate threshold (2-4V) for direct MCU drive<\/li>\n<li>Fast switching with low gate charge<\/li>\n<li>Avalanche rated for ruggedness in inductive loads<\/li>\n<li>TO-220 through-hole package for easy prototyping and heatsink mounting<\/li>\n<li>Industry-standard pinout (G-D-S left to right, front view)<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Motor drive and speed control (DC motors, BLDC)<\/li>\n<li>Power switching and load control<\/li>\n<li>Battery management and protection<\/li>\n<li>Solar charge controller power stage<\/li>\n<li>Inverter and converter power stages<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IRFZ44N is an N-channel power MOSFET from Infineon Technologies (originally International Rectifier). It features a 55V drain-source voltage rating and 49A continuous drain current with very low on-resistance of 17.5 m\u03a9. Packaged in a through-hole TO-220, it is widely used for switching and motor drive applications requiring high current handling and low [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-6609","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch MOSFET, 55V, 49A, 17.5m\u03a9, TO-220","date_code":"","package_case":"TO-220AB (10.4\u00d79.0\u00d74.6 mm, through-hole)","in_stock":14200,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfz44npbf.pdf","price":"$0.85 @ 1ku","product_introduction":"The IRFZ44N from Infineon Technologies is an N-channel power MOSFET rated at 55V\/49A with an ultra-low on-resistance of 17.5 m\u03a9. Designed for high-efficiency switching applications, it features a logic-level gate threshold (2-4V) enabling direct drive from 5V microcontrollers. The TO-220 package supports heatsink mounting for high-power applications including motor drives, power switching, and battery management systems.","working_principle":"The IRFZ44N is a vertical power MOSFET using a DMOS (Double-diffused MOS) structure. When a positive gate-source voltage exceeds the threshold (2-4V), an inversion layer forms in the P-body region, creating a conductive channel between drain and source. The very low RDS(ON) of 17.5 m\u03a9 is achieved through a dense cell structure that provides many parallel conduction paths. The device is fully enhanced at VGS=10V for minimum on-resistance. The body-drain diode provides inherent reverse conduction for inductive load applications. Avalanche rating ensures the device can absorb energy from inductive kickback without external protection.","pin_description":"<table>\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr>\n<tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>MOSFET gate (drive with 5-10V for full enhancement)<\/td><\/tr>\n<tr><td>2<\/td><td>Drain<\/td><td>Output<\/td><td>MOSFET drain (connects to load)<\/td><\/tr>\n<tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>MOSFET source (connects to ground, tab connected)<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li>DC motor drive and PWM speed control circuits<\/li>\n<li>High-current power switching and load control up to 49A<\/li>\n<li>Battery management system switching and protection<\/li>\n<li>Solar charge controller power stage<\/li>\n<li>Inverter half-bridge and full-bridge power stages<\/li>\n<\/ul>","alternative_models":"<table>\n<tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr>\n<tr><td>Infineon<\/td><td>IRFZ44NPbF<\/td><td>TO-220<\/td><td>Lead-free version<\/td><\/tr>\n<tr><td>Infineon<\/td><td>IRFZ48N<\/td><td>TO-220<\/td><td>60V, 64A, higher rating<\/td><\/tr>\n<tr><td>Vishay<\/td><td>IRLZ44N<\/td><td>TO-220<\/td><td>Logic-level gate, 5V drive optimized<\/td><\/tr>\n<tr><td>STMicroelectronics<\/td><td>STP55NF06L<\/td><td>TO-220<\/td><td>60V, 50A, logic-level<\/td><\/tr>\n<tr><td>ON Semiconductor<\/td><td>FDP55N06<\/td><td>TO-220<\/td><td>60V, 50A, similar specs<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6609","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6609"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6609\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6609"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6609"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6609"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6609"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}