The IRF7341TRPBF from Infineon Technologies is a dual N-channel HEXFET power MOSFET with 55V drain-source voltage, 50 m\u03a9 max on-resistance, and 4.7A continuous drain current per channel in an SO-8 surface-mount package. Using 5th-generation HEXFET technology, it provides ultra-low on-resistance per silicon area for compact power management applications.<\/p>\n
Product Overview The IRF7341TRPBF from Infineon Technologies is a dual N-channel HEXFET power MOSFET with 55V drain-source voltage, 50 m\u03a9 max on-resistance, and 4.7A continuous drain current per channel in an SO-8 surface-mount package. Using 5th-generation HEXFET technology, it provides ultra-low on-resistance per silicon area for compact power management applications. Key Specifications Configuration: Dual N-Channel […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-6513","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"Dual N-CH MOSFET, 55V, 4.7A\/ch, 50m\u03a9 Ron, logic-level, SO-8, HEXFET Gen5","date_code":"","package_case":"SO-8 (3.90mm width)","in_stock":7600,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63","price":"$0.89","product_introduction":"The IRF7341TRPBF from Infineon Technologies is a dual N-channel power MOSFET housed in an SO-8 package, combining two independent 55V\/4.7A MOSFETs with 50 m\u03a9 maximum on-resistance each. The 5th-generation HEXFET technology achieves ultra-low specific on-resistance, making the device ideal for space-constrained power management applications where two switches are needed in close proximity. The logic-level gate drive (fully enhanced at 4.5V) allows direct interface with 5V microcontrollers and DSPs. The dual-die SO-8 package features a customized lead frame that provides enhanced thermal performance compared to standard SO-8 designs. The TRPBF suffix indicates tape and reel packaging with lead-free construction.","working_principle":"The IRF7341TRPBF contains two independent N-channel MOSFETs in a single SO-8 package, each using Infineon's 5th-generation HEXFET planar stripe technology. In this architecture, the source and body regions are arranged as narrow stripes with the gate electrode running between them, creating parallel conduction channels. When VGS exceeds the threshold (1.0V min), an inversion layer forms in the P-body region under each gate stripe, allowing current to flow from drain to source through multiple parallel paths. The low VGS(th) enables full enhancement at logic-level gate voltages. The two MOSFETs share no electrical connections except through the package, allowing independent circuit configurations such as half-bridge, synchronous buck, or two independent load switches.","pin_description":"
| Pin<\/th> | Name<\/th> | Function<\/th><\/tr> | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source 1<\/td> | MOSFET 1 source terminal<\/td><\/tr> | ||||||||||||
| 2<\/td> | Gate 1<\/td> | MOSFET 1 gate terminal<\/td><\/tr> | ||||||||||||
| 3<\/td> | Source 2<\/td> | MOSFET 2 source terminal<\/td><\/tr> | ||||||||||||
| 4<\/td> | Gate 2<\/td> | MOSFET 2 gate terminal<\/td><\/tr> | ||||||||||||
| 5<\/td> | Drain 2<\/td> | MOSFET 2 drain terminal<\/td><\/tr> | ||||||||||||
| 6<\/td> | Drain 2<\/td> | MOSFET 2 drain terminal<\/td><\/tr> | ||||||||||||
| 7<\/td> | Drain 1<\/td> | MOSFET 1 drain terminal<\/td><\/tr> | ||||||||||||
| 8<\/td> | Drain 1<\/td> | MOSFET 1 drain terminal<\/td><\/tr><\/table>","application_scenarios":"The IRF7341TRPBF is commonly used in synchronous buck converters where one MOSFET serves as the high-side switch and the other as the synchronous rectifier. In battery management circuits, the dual configuration enables bidirectional current control with a single IC. For motor drive applications, the two MOSFETs form a half-bridge leg driving one phase of a BLDC motor. The logic-level gate drive simplifies the gate driver circuit by eliminating the need for gate drive voltages above 5V. The compact SO-8 footprint enables high-density PCB layouts in portable equipment.","alternative_models":"
|