{"id":6512,"date":"2026-06-17T03:29:45","date_gmt":"2026-06-17T03:29:45","guid":{"rendered":"https:\/\/materialparts.com\/stf26nm60n\/"},"modified":"2026-06-17T03:29:45","modified_gmt":"2026-06-17T03:29:45","slug":"stf26nm60n","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/stf26nm60n\/","title":{"rendered":"STF26NM60N"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The STF26NM60N from STMicroelectronics is an N-channel 600V MDmesh II power MOSFET with 135 m\u03a9 typical on-resistance and 20A drain current in a TO-220FP package. Using second-generation MDmesh strip-layout technology, it delivers low gate charge and excellent avalanche capability for high-efficiency switching power converters.<\/p>\n<h2>Especificaciones<\/h2>\n<ul>\n<li>Channel Type: N-Channel<\/li>\n<li>VDS: 600V<\/li>\n<li>VGS: \u00b130V<\/li>\n<li>ID: 20A (TC=25\u00b0C), 12.6A (TC=100\u00b0C)<\/li>\n<li>IDM: 80A (pulsed)<\/li>\n<li>RDS(on): 135 m\u03a9 typ, 165 m\u03a9 max @ VGS=10V, ID=10A<\/li>\n<li>VGS(th): 2V ~ 4V (ID=250\u00b5A)<\/li>\n<li>Qg: 60 nC typ @ VDD=480V, ID=20A, VGS=10V<\/li>\n<li>Qgd: 30 nC typ<\/li>\n<li>Ciss: 1800 pF<\/li>\n<li>Coss: 115 pF<\/li>\n<li>Crss: 1.1 pF<\/li>\n<li>EAS: 610 mJ (single pulse avalanche)<\/li>\n<li>PTOT: 35W (TC=25\u00b0C)<\/li>\n<li>Rth(j-c): 3.6\u00b0C\/W<\/li>\n<li>VISO: 2500V RMS (insulated package)<\/li>\n<li>Operating Temperature: -55\u00b0C ~ 150\u00b0C<\/li>\n<li>Package: TO-220FP (insulated)<\/li>\n<\/ul>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>MDmesh II second-generation strip-layout technology<\/li>\n<li>100% avalanche tested for robustness<\/li>\n<li>Low gate charge for efficient high-frequency switching<\/li>\n<li>Low input capacitance and Crss for fast transitions<\/li>\n<li>Insulated TO-220FP package (2500V RMS isolation)<\/li>\n<li>Internal gate resistance of 2.8 \u03a9 for EMI control<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Switch-mode power supplies (SMPS)<\/li>\n<li>Power factor correction (PFC) stages<\/li>\n<li>Motor drive inverters<\/li>\n<li>Lighting ballasts<\/li>\n<li>Induction heating<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The STF26NM60N from STMicroelectronics is an N-channel 600V MDmesh II power MOSFET with 135 m\u03a9 typical on-resistance and 20A drain current in a TO-220FP package. Using second-generation MDmesh strip-layout technology, it delivers low gate charge and excellent avalanche capability for high-efficiency switching power converters. Key Specifications Channel Type: N-Channel VDS: 600V VGS: \u00b130V [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[142],"class_list":["post-6512","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-st"],"acf":{"brief_explanation":"N-CH 600V MDmesh II MOSFET, 20A, 135m\u03a9 Ron, 60nC Qg, avalanche rated, TO-220FP insulated","date_code":"","package_case":"TO-220FP (insulated)","in_stock":3200,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/stf26nm60n.pdf","price":"$3.62","product_introduction":"The STF26NM60N from STMicroelectronics is a high-voltage N-channel power MOSFET built on the second-generation MDmesh technology platform. The MDmesh (Multiple Drain mesh) architecture uses a vertical stripe layout where the source and body regions are arranged as narrow stripes, dramatically reducing the gate-drain charge (Qgd = 30 nC) while maintaining low on-resistance (135 m\u03a9 typical). This makes the device particularly efficient in hard-switching applications such as PFC stages and half-bridge converters where switching losses dominate. The TO-220FP package provides 2500V RMS insulation from all leads to the heat sink, eliminating the need for external insulating washers and simplifying assembly. The 610 mJ avalanche energy rating ensures robustness during unclamped inductive switching events.","working_principle":"The STF26NM60N uses STMicroelectronics' MDmesh II technology where multiple vertical PN junctions (drain-body diodes) are formed in parallel using a stripe layout. During off-state, these PN junctions support the high drain voltage. During turn-on, the gate signal creates an inversion layer under each stripe, forming parallel conduction channels. The stripe geometry reduces the gate-drain overlap area, resulting in the low 30 nC gate-drain charge that minimizes switching losses during the Miller plateau region. The 1.1 pF reverse transfer capacitance (Crss) is exceptionally low for a 600V device, reducing the dv\/dt coupling between drain and gate that can cause parasitic turn-on in bridge configurations. The integrated Zener diode between gate and source provides ESD protection during handling.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Gate terminal (drive with 10-15V for lowest RDS(on))<\/td><\/tr><tr><td>2<\/td><td>Drain<\/td><td>Drain terminal (tab is drain, internally connected)<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Source terminal<\/td><\/tr><tr><td>Tab<\/td><td>Drain<\/td><td>Drain tab (insulated from heat sink mounting surface)<\/td><\/tr><\/table>","application_scenarios":"The STF26NM60N is commonly used in the primary side of offline SMPS where the 600V rating provides margin for 230VAC rectified mains (325VDC peak plus transient overshoot). In PFC boost converters, the low Qgd (30 nC) minimizes switching losses at switching frequencies of 65-100 kHz. For motor drive inverters, the insulated TO-220FP package simplifies heat sink mounting without external insulators. In induction heating, the 610 mJ avalanche rating provides robustness against the high-energy voltage spikes generated by the resonant tank circuit. The 135 m\u03a9 RDS(on) makes it suitable for output power levels up to 300W in half-bridge configurations.","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><\/tr><tr><td>STF26N60M2<\/td><td>STMicroelectronics<\/td><td>MDmesh M2, lower Qg (34nC), same package<\/td><\/tr><tr><td>IRFB20N60K<\/td><td>Infineon<\/td><td>600V, 20A, 190m\u03a9, TO-220<\/td><\/tr><tr><td>FCH26N60N<\/td><td>onsemi<\/td><td>600V, 26A, 120m\u03a9, TO-247<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6512","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6512"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6512\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6512"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6512"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6512"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6512"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}