The PMV250EPEAR is a P-Channel enhancement mode Trench MOSFET from Nexperia (formerly NXP) featuring -40V drain-source voltage, -1.5A continuous drain current, and 240 m\u03a9 maximum on-resistance in a compact SOT-23 (TO-236AB) package. AEC-Q101 qualified with logic-level gate drive, it is designed for high-side load switching, relay driving, and general-purpose switching in automotive and industrial applications.<\/p>\n
Product Overview The PMV250EPEAR is a P-Channel enhancement mode Trench MOSFET from Nexperia (formerly NXP) featuring -40V drain-source voltage, -1.5A continuous drain current, and 240 m\u03a9 maximum on-resistance in a compact SOT-23 (TO-236AB) package. AEC-Q101 qualified with logic-level gate drive, it is designed for high-side load switching, relay driving, and general-purpose switching in automotive and […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[168],"class_list":["post-6487","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-nxp"],"acf":{"brief_explanation":"P-Channel Trench MOSFET, -40V, -1.5A, 240m\u03a9, SOT-23, AEC-Q101, logic-level gate, automotive qualified","date_code":"","package_case":"SOT-23 (TO-236AB)","in_stock":14500,"datasheet":"https:\/\/www.nexperia.com\/product\/PMV250EPEAR","price":"$0.12","product_introduction":"The PMV250EPEAR from Nexperia is a P-Channel enhancement mode Trench MOSFET in a compact SOT-23 surface-mount package. Utilizing Nexperia's Trench MOSFET technology, it achieves a low 240 m\u03a9 on-resistance at -10V gate drive, making it suitable for high-side load switching applications where a P-Channel device is required for simplicity. The logic-level gate threshold (1V ~ 2.5V) allows direct drive from 3.3V or 5V microcontrollers. AEC-Q101 qualification ensures reliability in automotive environments, and the >1 kV HBM ESD protection adds robustness against handling and system-level electrostatic discharge events.","working_principle":"The PMV250EPEAR operates as a voltage-controlled switch using Trench MOSFET technology where vertical trenches etched into the silicon are lined with gate oxide and filled with polysilicon to form the gate electrode. This structure creates a channel on the trench sidewalls when a negative gate-source voltage is applied, allowing current to flow from source to drain. The Trench architecture provides higher channel density per unit area than planar structures, resulting in lower specific on-resistance. The low gate charge (4.7 nC) enables fast switching with minimal drive power. In a high-side load switch configuration, the source connects to the supply rail and the drain connects to the load, with the gate driven below the source voltage to turn on the switch.","pin_description":"
| Pin<\/th> | Name<\/th> | Function<\/th><\/tr> | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Gate<\/td> | Gate terminal (control input)<\/td><\/tr> | ||||||||||||
| 2<\/td> | Source<\/td> | Source terminal<\/td><\/tr> | ||||||||||||
| 3<\/td> | Drain<\/td> | Drain terminal<\/td><\/tr><\/table>","application_scenarios":"The PMV250EPEAR is commonly used as a high-side load switch in portable electronics and automotive body controllers, where its P-Channel configuration eliminates the need for a boost circuit or charge pump. As a relay driver, the low gate charge enables fast switching that reduces relay coil dissipation. In automotive applications such as interior lighting control, the AEC-Q101 qualification ensures reliable operation in the harsh automotive environment. The SOT-23 package is ideal for space-constrained applications where multiple load switches are needed in a small area, such as smartphone power management or distributed sensor networks.","alternative_models":"
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