{"id":6485,"date":"2026-06-17T03:14:05","date_gmt":"2026-06-17T03:14:05","guid":{"rendered":"https:\/\/materialparts.com\/irf3415strlpbf\/"},"modified":"2026-06-17T03:14:05","modified_gmt":"2026-06-17T03:14:05","slug":"irf3415strlpbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irf3415strlpbf\/","title":{"rendered":"IRF3415STRLPBF"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IRF3415STRLPBF is an N-Channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier) featuring 150V drain-source voltage, 43A continuous drain current, and 42 m\u03a9 maximum on-resistance. Built with fifth-generation HEXFET technology, it offers fast switching, avalanche rating, and improved dv\/dt capability in a D2PAK (TO-263AB) surface-mount package.<\/p>\n<h2>Especificaciones<\/h2>\n<ul>\n<li>Channel: N-Channel Enhancement Mode<\/li>\n<li>V_DSS: 150V<\/li>\n<li>V_GS: \u00b120V<\/li>\n<li>I_D (Continuous): 43A (Tc=25\u00b0C)<\/li>\n<li>R_DS(on): 42 m\u03a9 max at V_GS=10V<\/li>\n<li>V_GS(th): 2.0V ~ 4.0V<\/li>\n<li>Gate Charge (Qg): 78 nC typical<\/li>\n<li>C_iss: 2400 pF typical<\/li>\n<li>Power Dissipation: 200W (Tc=25\u00b0C)<\/li>\n<li>Avalanche Energy (EAS): 590 mJ<\/li>\n<li>dv\/dt: 5.0 V\/ns<\/li>\n<li>Operating Temperature: -55\u00b0C ~ +175\u00b0C<\/li>\n<li>Package: D2PAK (TO-263AB), 3 pins, Surface Mount<\/li>\n<\/ul>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Fifth-generation HEXFET technology for extremely low R_DS(on) per silicon area<\/li>\n<li>Avalanche rated for rugged environments<\/li>\n<li>Improved dv\/dt capability<\/li>\n<li>Fast switching performance<\/li>\n<li>Low gate charge (78 nC) simplifies drive requirements<\/li>\n<li>D2PAK package for high-power surface-mount applications<\/li>\n<li>175\u00b0C maximum junction temperature<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Switch-mode power supplies (SMPS)<\/li>\n<li>Convertidores CC-CC<\/li>\n<li>Motor drives and inverters<\/li>\n<li>Battery management systems<\/li>\n<li>Automotive power switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IRF3415STRLPBF is an N-Channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier) featuring 150V drain-source voltage, 43A continuous drain current, and 42 m\u03a9 maximum on-resistance. Built with fifth-generation HEXFET technology, it offers fast switching, avalanche rating, and improved dv\/dt capability in a D2PAK (TO-263AB) surface-mount package. Key Specifications Channel: N-Channel Enhancement [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-6485","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-Channel HEXFET MOSFET, 150V, 43A, 42m\u03a9 Rds(on), D2PAK, avalanche rated, 5th gen technology","date_code":"","package_case":"D2PAK (TO-263AB)","in_stock":8430,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf3415s-lpbf.pdf","price":"$1.44","product_introduction":"The IRF3415STRLPBF from Infineon Technologies is a fifth-generation HEXFET power MOSFET that achieves extremely low on-resistance per silicon area using advanced processing techniques. With 150V breakdown voltage and 42 m\u03a9 maximum R_DS(on), it delivers 43A of continuous drain current in a surface-mount D2PAK package. The device is avalanche rated, capable of withstanding high-energy pulses in avalanche mode, and features improved dv\/dt capability for robust operation in demanding switching applications. The STRLPBF suffix indicates D2PAK package, low-profile, tape and reel, and lead-free construction.","working_principle":"The IRF3415STRLPBF uses Infineon's fifth-generation HEXFET vertical DMOS structure where thousands of parallel MOSFET cells are interconnected on a single die. Each cell contributes to the total current handling capability while the parallel combination yields the low 42 m\u03a9 on-resistance. The vertical structure routes current vertically through the die from the top surface (source) to the bottom (drain), maximizing current density and thermal performance. The thick oxide gate structure provides reliable operation up to \u00b120V gate-source voltage. During avalanche events, the parasitic bipolar transistor is suppressed by optimized cell design, allowing the device to safely absorb 590 mJ of single-pulse avalanche energy. The body diode provides reverse conduction with a forward voltage of 1.3V typical at 22A.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Gate terminal (control input)<\/td><\/tr><tr><td>2<\/td><td>Drain<\/td><td>Drain terminal (connected to mounting tab)<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Source terminal<\/td><\/tr><tr><td>Tab<\/td><td>Drain<\/td><td>Drain (heat dissipation tab)<\/td><\/tr><\/table>","application_scenarios":"The IRF3415STRLPBF is widely used as the primary switch in switch-mode power supplies, particularly in forward and half-bridge converter topologies. Its 150V rating makes it suitable for 48V input telecom power supplies and automotive 12V\/24V systems with sufficient voltage margin. In motor drive applications, the low R_DS(on) minimizes conduction losses in H-bridge configurations. The avalanche rating provides inherent protection against inductive kickback from motor windings. For battery management systems, the device handles high current disconnect and pre-charge functions. The D2PAK package enables high-power designs without through-hole mounting, reducing assembly cost.","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><\/tr><tr><td>IRF3415LPBF<\/td><td>Infineon<\/td><td>Low-profile D2PAK variant<\/td><\/tr><tr><td>IRF3205STRLPBF<\/td><td>Infineon<\/td><td>55V, 8m\u03a9, higher current<\/td><\/tr><tr><td>IPP065N15N3<\/td><td>Infineon<\/td><td>150V, 6.5m\u03a9, SuperJunction<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6485","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6485"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6485\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6485"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6485"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6485"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6485"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}