{"id":6406,"date":"2026-06-16T02:55:10","date_gmt":"2026-06-16T02:55:10","guid":{"rendered":"https:\/\/materialparts.com\/irf9540n\/"},"modified":"2026-06-16T02:55:10","modified_gmt":"2026-06-16T02:55:10","slug":"irf9540n","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irf9540n\/","title":{"rendered":"IRF9540N"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel HEXFET power MOSFET in a TO-220AB package. With 0.117\u03a9 max RDS(on) at VGS=-10V and -23A continuous drain current, it is designed for high-side switching, load management, and reverse polarity protection in industrial and automotive applications.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Drain-Source Voltage (VDSS)<\/td>\n<td>-100V<\/td>\n<\/tr>\n<tr>\n<td>Continuous Drain Current<\/td>\n<td>-23A (TC=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) Max<\/td>\n<td>0.117\u03a9 (VGS=-10V)<\/td>\n<\/tr>\n<tr>\n<td>Gate Threshold Voltage<\/td>\n<td>-2V to -4V<\/td>\n<\/tr>\n<tr>\n<td>Power Dissipation<\/td>\n<td>140W (TC=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>Total Gate Charge<\/td>\n<td>97nC (typical)<\/td>\n<\/tr>\n<tr>\n<td>Input Capacitance<\/td>\n<td>1300pF (typical)<\/td>\n<\/tr>\n<tr>\n<td>Avalanche Energy<\/td>\n<td>430mJ (single pulse)<\/td>\n<\/tr>\n<tr>\n<td>Junction Temperature<\/td>\n<td>-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>TO-220AB<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Fifth-generation HEXFET technology<\/li>\n<li>Low RDS(on): 0.117\u03a9 max<\/li>\n<li>Fully avalanche rated<\/li>\n<li>Fast switching speed<\/li>\n<li>Dynamic dv\/dt rating<\/li>\n<li>175\u00b0C operating junction temperature<\/li>\n<li>Industry-standard TO-220 pinout<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>High-side load switching<\/li>\n<li>Reverse polarity protection<\/li>\n<li>DC motor control<\/li>\n<li>Switching power supplies<\/li>\n<li>Battery management systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel HEXFET power MOSFET in a TO-220AB package. With 0.117\u03a9 max RDS(on) at VGS=-10V and -23A continuous drain current, it is designed for high-side switching, load management, and reverse polarity protection in industrial and automotive applications. Key Specifications Drain-Source Voltage (VDSS) -100V Continuous [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[30,13],"tags":[],"chip_brand":[173],"class_list":["post-6406","post","type-post","status-publish","format-standard","hentry","category-ac-dc-converters","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"-100V P-CH MOSFET, -23A, 0.117\u03a9 RDS(on), TO-220AB, avalanche rated","date_code":"","package_case":"TO-220AB (3-pin, through-hole)","in_stock":12627,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IRF9540N-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153563b3a9f220d","price":"$0.51 @ 1ku","product_introduction":"The IRF9540N from Infineon is a -100V P-channel power MOSFET in the industry-standard TO-220AB package. Utilizing fifth-generation HEXFET technology, it achieves extremely low on-resistance per silicon area, with RDS(on) of 0.117\u03a9 maximum at VGS=-10V. The device is fully avalanche rated with 430mJ single-pulse energy capability. The -23A continuous drain current rating at TC=25\u00b0C and 140W power dissipation make it suitable for demanding power switching applications. As a P-channel device, it simplifies high-side switching circuits by eliminating the need for bootstrap charge pumps required by N-channel solutions.","working_principle":"The IRF9540N is a P-channel enhancement-mode MOSFET. Current flows from source to drain when the gate-to-source voltage is driven negative relative to the source, creating an inversion layer (channel) in the P-type body region that connects the P+ source and P-epi drain. The RDS(on) of 0.117\u03a9 at VGS=-10V represents the total resistance of this channel plus the drift region and substrate. The body diode (inherent PN junction between body and drain) is forward-biased when VDS is positive, providing a natural freewheeling path for inductive loads. For high-side switching, the source connects to the positive supply rail and the gate is pulled below the source to turn ON. The gate requires only voltage drive once the input capacitance is charged.","pin_description":"<table border='1'><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Description<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>Gate control; drive negative relative to source to turn ON<\/td><\/tr><tr><td>2<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal; connected to metal tab<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal; connects to positive supply<\/td><\/tr><\/table>","application_scenarios":"<ul><li><b>High-Side Load Switching:<\/b> Controls power to loads by pulling gate below supply rail, eliminating bootstrap circuitry required by N-channel solutions<\/li><li><b>Reverse Polarity Protection:<\/b> Placed in positive supply path with gate tied to ground; during normal operation the body diode conducts and gate bias enhances the channel, while reverse polarity blocks the fault<\/li><li><b>DC Motor H-Bridge:<\/b> Pairs with N-channel MOSFETs in half-bridge configurations for bidirectional motor control<\/li><\/ul>","alternative_models":"<table border='1'><tr><th>Model<\/th><th>Manufacturer<\/th><th>VDSS<\/th><th>ID<\/th><th>Key Difference<\/th><\/tr><tr><td>IRF9540NPbF<\/td><td>Infineon<\/td><td>-100V<\/td><td>-23A<\/td><td>Lead-free version<\/td><\/tr><tr><td>FQP47P06<\/td><td>ONsemi<\/td><td>-60V<\/td><td>-47A<\/td><td>Lower voltage, higher current<\/td><\/tr><tr><td>IRF9Z34N<\/td><td>Infineon<\/td><td>-55V<\/td><td>-19A<\/td><td>Lower voltage, lower RDS(on)<\/td><\/tr><tr><td>NDP6020P<\/td><td>ONsemi<\/td><td>-20V<\/td><td>-24A<\/td><td>Logic-level gate, low voltage<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6406","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6406"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6406\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6406"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6406"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6406"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6406"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}