{"id":6287,"date":"2026-06-12T11:13:39","date_gmt":"2026-06-12T11:13:39","guid":{"rendered":"https:\/\/materialparts.com\/rb521s30t1g\/"},"modified":"2026-06-12T11:13:39","modified_gmt":"2026-06-12T11:13:39","slug":"rb521s30t1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/rb521s30t1g\/","title":{"rendered":"RB521S30T1G"},"content":{"rendered":"

Productos<\/h2>\n

The RB521S30T1G from onsemi is a 30V, 0.5A Schottky barrier diode in an ultra-small SOD-523 (SC-79) package. With a low forward voltage drop of 0.37V at 10mA and reverse leakage of just 0.5\u00b5A, it is designed for polarity protection, signal rectification, and power management in space-constrained portable electronics.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n
Reverse Voltage (VR)<\/td>\n30V<\/td>\n<\/tr>\n
Forward Current (IF)<\/td>\n0.5A<\/td>\n<\/tr>\n
Forward Voltage (VF)<\/td>\n0.37V (typ) @IF=10mA; 0.55V (typ) @IF=100mA<\/td>\n<\/tr>\n
Reverse Current (IR)<\/td>\n0.5\u00b5A (max) @VR=25V<\/td>\n<\/tr>\n
Junction Capacitance<\/td>\n5pF (typ)<\/td>\n<\/tr>\n
Paquete<\/td>\nSOD-523 (SC-79)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +125\u00b0C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Low forward voltage drop of 0.37V for minimal power loss<\/li>\n
  • Ultra-small SOD-523 package (1.6 x 0.8mm)<\/li>\n
  • Low junction capacitance of 5pF for high-speed signals<\/li>\n
  • Low reverse leakage of 0.5\u00b5A for battery-powered designs<\/li>\n
  • AEC-Q101 qualified variants available<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Polarity protection for battery-powered devices<\/li>\n
    • Signal rectification and clamping<\/li>\n
    • OR-ing diodes in redundant power paths<\/li>\n
    • DC-DC converter freewheeling diode<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The RB521S30T1G from onsemi is a 30V, 0.5A Schottky barrier diode in an ultra-small SOD-523 (SC-79) package. With a low forward voltage drop of 0.37V at 10mA and reverse leakage of just 0.5\u00b5A, it is designed for polarity protection, signal rectification, and power management in space-constrained portable electronics. Key Specifications Reverse Voltage (VR) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[144],"class_list":["post-6287","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"30V 0.5A Schottky barrier diode, 0.37V VF, SOD-523, for polarity protection and rectification","date_code":"","package_case":"SOD-523 (SC-79, 1.6 x 0.8 x 0.6mm)","in_stock":7150,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/rb521s30-d.pdf","price":"$0.04 @1ku","product_introduction":"The RB521S30T1G is a 30V, 0.5A Schottky barrier diode from onsemi in the ultra-compact SOD-523 (SC-79) package. Its low forward voltage drop (0.37V at 10mA) and low reverse leakage (0.5\u00b5A at 25V) make it ideal for power management in portable electronics where board space and power efficiency are at a premium. The 5pF junction capacitance preserves signal integrity in high-speed rectification and clamping applications.","working_principle":"The RB521S30T1G is a metal-semiconductor (Schottky) junction diode. Unlike conventional PN junction diodes, the Schottky junction is formed by a metal contact on a semiconductor, which eliminates minority carrier storage. This results in two key advantages: lower forward voltage drop (0.37V vs. 0.7V for silicon PN diodes) and faster reverse recovery (effectively zero recovery time). When forward-biased, current flows easily with minimal voltage loss. When reverse-biased, the junction blocks current with very low leakage (0.5\u00b5A), making it suitable for battery-conscious designs.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1<\/td>Cathode<\/td>Cathode terminal (band marked)<\/td><\/tr>
      2<\/td>Anode<\/td>Anode terminal<\/td><\/tr><\/table>","application_scenarios":"
      • Battery polarity protection in portable electronics<\/li>
      • Signal rectification and clamping in communication circuits<\/li>
      • Power supply OR-ing for redundant battery paths<\/li>
      • Freewheeling diode in low-power DC-DC converters<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VR<\/th>VF<\/th>Package<\/th><\/tr>
        RB521S30T5G<\/td>onsemi<\/td>30V<\/td>0.37V<\/td>SOD-523<\/td><\/tr>
        1PS76SB40<\/td>Nexperia<\/td>40V<\/td>0.38V<\/td>SOD-523<\/td><\/tr>
        SD103AWS<\/td>onsemi<\/td>40V<\/td>0.55V<\/td>SOD-323<\/td><\/tr>
        BAS70-04<\/td>Infineon<\/td>70V<\/td>0.41V<\/td>SOT-23<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6287","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6287"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6287\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6287"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6287"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6287"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6287"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}