{"id":6276,"date":"2026-06-12T11:05:55","date_gmt":"2026-06-12T11:05:55","guid":{"rendered":"https:\/\/materialparts.com\/irf7413trpbf\/"},"modified":"2026-06-12T11:05:55","modified_gmt":"2026-06-12T11:05:55","slug":"irf7413trpbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/irf7413trpbf\/","title":{"rendered":"IRF7413TRPBF"},"content":{"rendered":"

Productos<\/h2>\n

The IRF7413TRPBF from Infineon (International Rectifier) is a 30V N-channel HEXFET power MOSFET with ultra-low 11mOhm RDS(on) at 10V gate drive. Rated at 13A continuous drain current in an SO-8 package, it is designed for low-voltage power switching applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
VDS (Max)<\/td>\n30V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n13A (TA=25C)<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=10V<\/td>\n11 mOhm<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=4.5V<\/td>\n18 mOhm<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.0V to 3.0V<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n52 nC @ VGS=10V<\/td>\n<\/tr>\n
Ciss (Typical)<\/td>\n1800 pF<\/td>\n<\/tr>\n
PD (TA=25C)<\/td>\n2.5W<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 to 150 C<\/td>\n<\/tr>\n
Paquete<\/td>\nSO-8<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Ultra-low 11mOhm RDS(on) for minimal conduction losses<\/li>\n
  • 13A current capability in compact SO-8 package<\/li>\n
  • Generation V HEXFET technology<\/li>\n
  • 100% avalanche tested<\/li>\n
  • Logic-level gate threshold (1.0-3.0V)<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • DC-DC converter synchronous rectification<\/li>\n
    • Motor drive and load switching<\/li>\n
    • Battery management and protection<\/li>\n
    • Power supply OR-ing and hot-swap<\/li>\n
    • Notebook and motherboard VRM<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF7413TRPBF from Infineon (International Rectifier) is a 30V N-channel HEXFET power MOSFET with ultra-low 11mOhm RDS(on) at 10V gate drive. Rated at 13A continuous drain current in an SO-8 package, it is designed for low-voltage power switching applications. Key Specifications VDS (Max) 30V ID (Continuous) 13A (TA=25C) RDS(on) Max @ VGS=10V 11 […]<\/p>\n","protected":false},"author":2,"featured_media":6381,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-6276","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"30V 13A N-ch MOSFET, 11mOhm RDS(on), SO-8, ultra-low on-resistance","date_code":"","package_case":"SO-8 (5.0 x 6.2 x 1.75mm)","in_stock":14862,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf7413pbf.pdf?fileId=5546d462533600a4015355e3f4ad1c43","price":"$0.66 @ 5ku","product_introduction":"The IRF7413TRPBF from Infineon is an N-channel HEXFET power MOSFET utilizing Generation V technology to achieve ultra-low on-resistance of 11mOhm at 10V gate drive. With a 30V drain-source voltage rating and 13A continuous drain current, it is optimized for low-voltage, high-current switching applications such as synchronous rectification in DC-DC converters, motor drive, and battery management. The SO-8 package with enhanced thermal characteristics enables 2.5W power dissipation at 25C ambient temperature. The low gate threshold (1.0-3.0V) supports logic-level gate drive.","working_principle":"The IRF7413TRPBF operates as a vertical power MOSFET using Infineon's HEXFET Generation V technology. **Channel Formation**: When VGS exceeds the threshold (1.0-3.0V), an inversion layer forms at the semiconductor surface, creating a conductive channel between source and drain. The extremely low RDS(on) of 11mOhm is achieved through advanced trench gate technology and dense cell packing that maximizes channel width per unit area. **RDS(on) Characteristics**: At VGS=10V, RDS(on) is 11mOhm max. At logic-level VGS=4.5V, RDS(on) increases to 18mOhm due to incomplete channel enhancement. For minimum conduction loss, 10V gate drive is preferred. **Switching Behavior**: The total gate charge of 52nC determines the switching energy. At high switching frequencies, gate drive losses (Qg x VGS x f) become significant. The relatively high Ciss (1800pF) requires a low-impedance gate driver. **Body Diode**: The intrinsic body diode can conduct reverse current with a forward drop of 1.0V, useful in synchronous rectification. The reverse recovery time (74-110ns) and charge (200-300nC) must be considered in high-frequency switching designs.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>Source<\/td>Source terminal<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>Gate<\/td>Gate control terminal<\/td><\/tr>
      5<\/td>Drain<\/td>Drain terminal (connected to tab)<\/td><\/tr>
      6-8<\/td>Drain<\/td>Drain terminals<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous Rectification: Low-side MOSFET in buck converter output stage with 11mOhm minimizing I2R losses<\/li>
      • Motor Drive: H-bridge and half-bridge driver for brushed DC motors at 12-24V<\/li>
      • Battery Protection: Overcurrent disconnect switch in Li-ion battery management systems<\/li>
      • Hot-Swap: Inrush current limiting and OR-ing in redundant power supply systems<\/li>
      • Notebook VRM: Core voltage regulator MOSFET for mobile computing platforms<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        IRF7413PBF<\/td>Infineon<\/td>Tube packaging version (same die)<\/td><\/tr>
        IRF7413ZTRPBF<\/td>Infineon<\/td>Lower Qg, improved switching<\/td><\/tr>
        SI4884DY-T1-E3<\/td>Vishay<\/td>30V, 9.5mOhm, SO-8<\/td><\/tr>
        FDS6690A<\/td>onsemi<\/td>30V, 13mOhm, SO-8<\/td><\/tr>
        AO4407A<\/td>Alpha & Omega<\/td>30V, 8.5mOhm, SO-8, lower RDS<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6276","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=6276"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/6276\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/6381"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=6276"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=6276"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=6276"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=6276"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}