{"id":5883,"date":"2026-06-11T06:02:18","date_gmt":"2026-06-11T06:02:18","guid":{"rendered":"https:\/\/materialparts.com\/bss127s-7\/"},"modified":"2026-06-12T02:45:00","modified_gmt":"2026-06-12T02:45:00","slug":"bss127s-7","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/bss127s-7\/","title":{"rendered":"BSS127S-7"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The BSS127S-7 from Diodes Incorporated is a 600V 160mA N-channel MOSFET with high-voltage capability in SOT-23 for off-line switching and gate driving.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Paquete<\/td>\n<td>SOT-23 (2.9&#215;1.3mm)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>See datasheet for complete specifications<\/li>\n<li>Industry-standard package<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Industrial control<\/li>\n<li>Consumer electronics<\/li>\n<li>Communication equipment<\/li>\n<li>Power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The BSS127S-7 from Diodes Incorporated is a 600V 160mA N-channel MOSFET with high-voltage capability in SOT-23 for off-line switching and gate driving. Key Specifications Package SOT-23 (2.9&#215;1.3mm) Features See datasheet for complete specifications Industry-standard package Applications Industrial control Consumer electronics Communication equipment Power management<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[193],"class_list":["post-5883","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-diodes-inc"],"acf":{"brief_explanation":"N-ch MOSFET, 600V 160mA, SOT-23","date_code":"","package_case":"SOT-23 (2.9x1.3mm)","in_stock":13068,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/BSS127S.pdf","price":"$0.15 @ 1ku","product_introduction":"The BSS127S-7 from Diodes Incorporated is a 600V 160mA N-channel MOSFET with high-voltage capability in SOT-23 for off-line switching and gate driving.","working_principle":"The BSS127S-7 is an N-channel enhancement-mode MOSFET from Diodes Inc\/Infineon in SOT-23, rated at 600V drain-source voltage and 160mA drain current with 12Ohm RDS(on) at VGS=10V. The 600V rating makes it one of the highest-voltage SOT-23 MOSFETs available, using super-junction technology: alternating N-type and P-type columns in the drift region allow higher doping (lower RDS(on)) while maintaining the 600V breakdown voltage that would normally require a thick, lightly-doped drift region. At VGS=4.5V, RDS(on) increases to approximately 20Ohm, and at VGS=2.5V it is approximately 35Ohm, so the device is best driven from 5V or 10V gate voltage for reasonable conduction loss. The 160mA current rating limits it to low-power switching applications: at 100mA and 12Ohm, conduction loss is 120mW, which the SOT-23 can handle with modest temperature rise. The gate charge is only 1.7nC at 10V, enabling fast switching with minimal gate drive. The 600V rating suits offline switch-mode power supply applications: start-up circuits, auxiliary winding switches, and high-voltage level shifting. The device can also serve as a high-voltage open-drain output for status signaling across large voltage differentials. The S suffix indicates SOT-23 package, and the -7 suffix denotes Diodes Inc part numbering.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>G<\/td><td>Input<\/td><td>Gate terminal (enhancement mode)<\/td><\/tr><tr><td>2<\/td><td>S<\/td><td>Power<\/td><td>Source terminal<\/td><\/tr><tr><td>3<\/td><td>D<\/td><td>Power<\/td><td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"<li>Industrial control<\/li><li>Consumer electronics<\/li><li>Communication equipment<\/li><li>Power management<\/li>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>BSS127S-7<\/td><td>SOT-23<\/td><td>Same device, Infineon label<\/td><\/tr><tr><td>Nexperia<\/td><td>BSS127,215<\/td><td>SOT-23<\/td><td>600V 160mA, same spec<\/td><\/tr><tr><td>onsemi<\/td><td>2N7002BK3HLP<\/td><td>SOT-23<\/td><td>60V 130mA, much lower voltage<\/td><\/tr><tr><td>Vishay<\/td><td>TN0604N3-G<\/td><td>SOT-23<\/td><td>60V 160mA N-ch, lower voltage<\/td><\/tr><tr><td>Infineon<\/td><td>IPP60R099CPA<\/td><td>TO-220<\/td><td>600V 11A, power MOSFET alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5883","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=5883"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5883\/revisions"}],"predecessor-version":[{"id":6035,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5883\/revisions\/6035"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=5883"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=5883"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=5883"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=5883"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}