\n| Paquete<\/td>\n | BGA-90 (8x13mm)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\n\n- See datasheet for complete specifications<\/li>\n
- Industry-standard package<\/li>\n<\/ul>\n
Aplicaciones<\/h2>\n\n- Industrial control<\/li>\n
- Consumer electronics<\/li>\n
- Communication equipment<\/li>\n
- Power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"
Product Overview The MT46H32M16LFBF-5 IT:C from Micron is a 512Mb Mobile DDR (LPDDR) SDRAM with 200MHz clock, 1.8V supply, and partial-array refresh in BGA-90 for mobile devices. Key Specifications Package BGA-90 (8x13mm) Features See datasheet for complete specifications Industry-standard package Applications Industrial control Consumer electronics Communication equipment Power management<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[3],"class_list":["post-5850","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-micron"],"acf":{"brief_explanation":"512Mb Mobile DDR (LPDDR), 200MHz, BGA-90","date_code":"","package_case":"BGA-90 (8x13mm)","in_stock":4364,"datasheet":"https:\/\/www.micron.com\/products\/dram\/mobile-dram","price":"$4.00 @ 1ku","product_introduction":"The MT46H32M16LFBF-5 IT:C from Micron is a 512Mb Mobile DDR (LPDDR) SDRAM with 200MHz clock, 1.8V supply, and partial-array refresh in BGA-90 for mobile devices.","working_principle":"The MT46H32M16LFBF-5 IT:C is a 512Mb (64MB) Mobile DDR (LPDDR) SDRAM from Micron in BGA-90, organized as 32M x 16-bit, running at 200MHz (CL3). LPDDR (Low-Power DDR) reduces operating voltage to 1.8V (vs 2.5V for standard DDR) and uses partial-array refresh, temperature-compensated refresh, and deep power-down mode to minimize power consumption. Memory access uses a two-step process: first, the RAS (Row Address Strobe) command latches the row address into one of 8 banks (selected by BA0-BA2), opening a row in the memory array. Then, the CAS (Column Address Strobe) command latches the column address to access a specific 16-bit word. Precharge closes the row before opening another. The burst length is programmable (2, 4, 8, or full-page), with BL4 being the most common. The differential data strobes (DQS) are driven by the DRAM during reads and by the memory controller during writes, providing source-synchronous timing. The -5 speed grade specifies 5ns clock period (200MHz). The IT:C suffix denotes industrial temperature range with known good die traceability. Mobile DDR achieves 60% lower active power and 90% lower standby power compared to standard DDR.","pin_description":" | Pin<\/th> | Name<\/th> | Type<\/th> | Function<\/th><\/tr> |
|---|
| A0-A12<\/td> | A0-A12<\/td> | Input<\/td> | Row\/column address lines (multiplexed)<\/td><\/tr> | | BA0-BA2<\/td> | BA0-BA2<\/td> | Input<\/td> | Bank address (8 banks)<\/td><\/tr> | | DQ0-DQ15<\/td> | DQ0-DQ15<\/td> | I\/O<\/td> | Data bus (16-bit wide)<\/td><\/tr> | | CLK\/CLK<\/td> | CLK\/CLK<\/td> | Input<\/td> | Differential clock<\/td><\/tr> | | CKE<\/td> | CKE<\/td> | Input<\/td> | Clock enable<\/td><\/tr> | | CS\/RAS\/CAS\/WE<\/td> | CMD<\/td> | Input<\/td> | Command inputs (chip select, row\/col strobe, write enable)<\/td><\/tr> | | LDQS\/UDQS<\/td> | DQS<\/td> | I\/O<\/td> | Data strobes (lower\/upper byte)<\/td><\/tr> | | LDM\/UDM<\/td> | DM<\/td> | Input<\/td> | Data masks (lower\/upper byte)<\/td><\/tr> | | VDD\/VDDQ\/VSS\/VSSQ<\/td> | PWR<\/td> | Power<\/td> | Core and I\/O power supplies<\/td><\/tr><\/table>","application_scenarios":"- Industrial control<\/li>
- Consumer electronics<\/li>
- Communication equipment<\/li>
- Power management<\/li>","alternative_models":"
| Manufacturer<\/th> | Part Number<\/th> | Package<\/th> | Notes<\/th><\/tr> |
|---|
| Micron<\/td> | MT46H32M16LFBF-6 IT:C<\/td> | BGA-90<\/td> | Same device, 166MHz grade<\/td><\/tr> | | Samsung<\/td> | K4X51163PJ-1GCF<\/td> | BGA-90<\/td> | 512Mb LPDDR, 200MHz<\/td><\/tr> | | Micron<\/td> | MT46H64M16LFBF-5 IT:C<\/td> | BGA-90<\/td> | 1Gb LPDDR, double density<\/td><\/tr> | | Winbond<\/td> | W9751G6KB-25<\/td> | BGA-90<\/td> | 512Mb LPDDR, 200MHz alternative<\/td><\/tr> | | ISSI<\/td> | IS45S16160G-7BLA1<\/td> | BGA-90<\/td> | 256Mb mobile DDR, 143MHz<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5850","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=5850"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5850\/revisions"}],"predecessor-version":[{"id":6003,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/5850\/revisions\/6003"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=5850"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=5850"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=5850"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=5850"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}} |
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