The ADUM4223CRWZ-RL from Analog Devices is a dual isolated IGBT\/MOSFET gate driver with 4A peak output, 5000Vrms isolation, and 150ns propagation delay in SOIC-16W.<\/p>\n
| Paquete<\/td>\n | SOIC-16W (10.3×7.5mm)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The ADUM4223CRWZ-RL from Analog Devices is a dual isolated IGBT\/MOSFET gate driver with 4A peak output, 5000Vrms isolation, and 150ns propagation delay in SOIC-16W. Key Specifications Package SOIC-16W (10.3×7.5mm) Features See datasheet for complete specifications Industry-standard package Applications Industrial control Consumer electronics Communication equipment Power management<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[36,13],"tags":[],"chip_brand":[165],"class_list":["post-5724","post","type-post","status-publish","format-standard","hentry","category-gate-driver-ics","category-integrated-circuits-ics","chip_brand-adi"],"acf":{"brief_explanation":"Dual isolated gate driver, 4A, 5000Vrms, SOIC-16W","date_code":"","package_case":"SOIC-16W (10.3x7.5mm)","in_stock":5103,"datasheet":"https:\/\/www.analog.com\/en\/products\/adum4223.html","price":"$5.00 @ 1ku","product_introduction":"The ADUM4223CRWZ-RL from Analog Devices is a dual isolated IGBT\/MOSFET gate driver with 4A peak output, 5000Vrms isolation, and 150ns propagation delay in SOIC-16W.","working_principle":"The ADUM4223CRWZ-RL is a dual isolated gate driver from Analog Devices in SOIC-16W with 5000Vrms isolation rating and 4A peak output current per channel. It uses iCoupler technology (chip-scale transformers with polyimide insulation) to provide galvanic isolation between the logic input side and the gate drive output side. The two independent channels (VIA\/VIB inputs, VA\/VB outputs) can drive the high-side and low-side MOSFETs or IGBTs in a half-bridge configuration. The VDD2 supply on the isolated side typically connects to a bootstrap or isolated DC-DC supply providing 12-15V for full enhancement of power MOSFETs (or +15V\/-5V for IGBTs with a dual supply). The output stage uses a pull-up\/pull-down MOSFET pair providing 4A peak source and 4A peak sink current, enabling fast switching of power devices with high gate charge (Qg up to 200nC at 100kHz). The propagation delay is 55ns typical with 5ns channel-to-channel matching, critical for preventing shoot-through in half-bridge configurations. The DISABLE pin (active HIGH) forces both outputs LOW regardless of input state, useful for fault protection and safe shutdown. The UVLO (Undervoltage Lockout) on VDD2 prevents gate drive when the isolated supply is below 7V (typical), ensuring MOSFETs are not partially enhanced. The 5000Vrms isolation rating meets reinforced insulation requirements for 300Vrms working voltage per IEC 60747-5-5.","pin_description":"
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