The MT41K256M16HA-125:E from Micron is a 4Gb (256Mx16) DDR3L SDRAM operating at 1600Mbps in a 96-ball BGA package for high-performance embedded memory applications.<\/p>\n
| Paquete<\/td>\n | 96-BGA (8x14mm)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The MT41K256M16HA-125:E from Micron is a 4Gb (256Mx16) DDR3L SDRAM operating at 1600Mbps in a 96-ball BGA package for high-performance embedded memory applications. Key Specifications Package 96-BGA (8x14mm) Features See datasheet for complete specifications Industry-standard package Applications Industrial control Consumer electronics Communication equipment Automotive electronics<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[3],"class_list":["post-5569","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-micron"],"acf":{"brief_explanation":"4Gb DDR3L SDRAM, 16-bit, 1600Mbps, 96-BGA","date_code":"","package_case":"96-BGA (8x14mm)","in_stock":11654,"datasheet":"https:\/\/www.micron.com\/products\/dram\/ddr3-sdram","price":"$6.80 @ 1ku","product_introduction":"The MT41K256M16HA-125:E from Micron is a 4Gb (256Mx16) DDR3L SDRAM operating at 1600Mbps in a 96-ball BGA package for high-performance embedded memory applications.","working_principle":"The MT41K256M16HA-125:E is a 4Gb (256M x 16-bit) DDR3L SDRAM from Micron in 96-ball FBGA, running at 1600Mbps data rate (800MHz clock, 125ns access time). The DDR3L specification operates at 1.35V (vs 1.5V for standard DDR3), reducing power consumption by approximately 15%. The -125:E suffix specifies CL=9 at 800MHz (125ns clock period), extended temperature range (0C to +95C). The memory is organized as 8 banks of 32K rows x 1024 columns x 16 bits. Access begins with ACTIVATE (row address on A0-A15), followed by READ or WRITE (column address on A0-A9). After access, PRECHARGE closes the row. The DDR3 protocol requires: tRCD = 13.5ns (ACTIVATE to READ\/WRITE), tRP = 13.5ns (PRECHARGE to ACTIVATE), tRAS = 35ns (ACTIVATE to PRECHARGE). The data bus uses DDR (Double Data Rate) signaling: data is transferred on both rising and falling clock edges, doubling throughput. The DQS (Data Strobe) signal is a bidirectional clock that the DRAM sources during reads and the controller sources during writes, providing precise data capture timing. The ODT (On-Die Termination) feature terminates the DQ\/DQS signals internally at 34\/40\/60\/120 ohms (programmable), eliminating external termination resistors and improving signal integrity. The ZQ calibration pin connects to a 240-ohm external resistor, providing a reference for internal VREF and ODT calibration. The auto-refresh requirement is 8192 cycles per 64ms (distributed refresh). The self-refresh mode maintains data with minimal power (IDD6 = 12mA). Applications include: embedded Linux memory, FPGA buffering, and SoC main memory.","pin_description":"
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