The PBSS8110T from Nexperia is a 100V, 1A NPN low VCEsat (BISS) transistor in SOT-23 with high current gain (hFE 150-500) and low saturation voltage for power switching applications.<\/p>\n
| Tipo<\/td>\n | NPN Low VCEsat (BISS) Transistor<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| VCEO<\/td>\n | 100V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| IC (max)<\/td>\n | 1A (continuous)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| VCEsat<\/td>\n | 90mV (typ) @ IC=500mA, IB=50mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| hFE<\/td>\n | 150 ~ 500 @ IC=100mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| fT<\/td>\n | 100 MHz (min)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Ptot<\/td>\n | 300mW<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| PNP Complement<\/td>\n | PBSS9110T<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Paquete<\/td>\n | SOT-23 (TO-236AB)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -65 to +150 C<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The PBSS8110T from Nexperia is a 100V, 1A NPN low VCEsat (BISS) transistor in SOT-23 with high current gain (hFE 150-500) and low saturation voltage for power switching applications. Key Specifications Type NPN Low VCEsat (BISS) Transistor VCEO 100V IC (max) 1A (continuous) VCEsat 90mV (typ) @ IC=500mA, IB=50mA hFE 150 ~ 500 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[140],"class_list":["post-3809","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-nexperia"],"acf":{"brief_explanation":"100V 1A NPN low VCEsat transistor, hFE 150-500, SOT-23","date_code":"","package_case":"SOT-23 (TO-236AB, 2.9 x 1.3 x 1.0 mm)","in_stock":17400,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/PBSS8110T.pdf","price":"$0.06 @ 3ku","product_introduction":"The PBSS8110T from Nexperia is a 100V, 1A NPN bipolar junction transistor from the BISS (Breakthrough In Small Signal) product family, optimized for extremely low collector-emitter saturation voltage (VCEsat). The 90mV typical VCEsat at 500mA collector current is dramatically lower than conventional small-signal transistors (which typically have 200-600mV VCEsat), resulting in significantly lower conduction losses and higher efficiency in switching applications. This low VCEsat is achieved through Nexperia's advanced silicon technology and a special transistor structure that reduces the collector resistance. The high current gain (hFE 150-500 at 100mA) means that even high collector currents can be driven with modest base currents, simplifying the driver circuit design. The 100V VCEO rating makes this device suitable for 48V automotive power systems (which require components rated for at least 2x the nominal voltage for load dump protection). The PNP complement PBSS9110T enables push-pull and half-bridge configurations. The compact SOT-23 package provides high power density in a small footprint, making it ideal for space-constrained applications where a MOSFET might be oversized.","working_principle":"The PBSS8110T operates as an NPN bipolar junction transistor optimized for low saturation voltage. Key characteristics include: (1) Low VCEsat Structure - the transistor uses a heavily doped collector region and optimized epitaxial layer thickness to minimize the collector series resistance; in saturation (when both base-emitter and base-collector junctions are forward-biased), the collector current flows through this low-resistance path, resulting in only 90mV voltage drop at 500mA; this is approximately 3-6x lower than conventional transistors like BC847; (2) High hFE - the current gain of 150-500 at 100mA means the transistor requires only 0.33-0.67mA base current to drive 100mA collector current; at 500mA, the required base current is approximately 50mA for guaranteed saturation; (3) Saturation Operation - to ensure low VCEsat, the base current must be sufficient to drive the transistor into deep saturation (IB > IC\/hFE); the forced beta (IC\/IB) should be 10-20 for optimal saturation; (4) Switching - the 100MHz transition frequency supports fast switching; the turn-on time is limited by the base charge time; the turn-off time is limited by the stored charge in the saturated collector-base junction; a negative base current or resistive base drive can speed up turn-off.","pin_description":"
|