The PESD5V0V1BL from Nexperia is a uni-directional ESD protection diode in a SOD-523 package with 5V working voltage, 9V breakdown, and ultra-low 0.5pF capacitance for high-speed signal line protection.<\/p>\n
| Tipo<\/td>\n | Unidirectional ESD Protection Diode<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Working Voltage (VRWM)<\/td>\n | 5V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Breakdown Voltage (VBR)<\/td>\n | 6V (min) \/ 9V (max)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Clamping Voltage (VC)<\/td>\n | 13V @ IPP=2A (IEC 61000-4-2)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Line Capacitance<\/td>\n | 0.5 pF (typ @ 1MHz)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Leakage Current<\/td>\n | 30 nA (max @ VRWM)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| ESD Rating (IEC 61000-4-2)<\/td>\n | +\/-15kV Contact, +\/-25kV Air<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Dynamic Resistance<\/td>\n | 0.5 ohm (typ)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Paquete<\/td>\n | SOD-523 (1.6 x 0.8mm)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -55 to +150 C (TJ)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The PESD5V0V1BL from Nexperia is a uni-directional ESD protection diode in a SOD-523 package with 5V working voltage, 9V breakdown, and ultra-low 0.5pF capacitance for high-speed signal line protection. Key Specifications Type Unidirectional ESD Protection Diode Working Voltage (VRWM) 5V Breakdown Voltage (VBR) 6V (min) \/ 9V (max) Clamping Voltage (VC) 13V @ […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[140],"class_list":["post-3762","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-nexperia"],"acf":{"brief_explanation":"Unidirectional ESD diode, 5V VRWM, 0.5pF, +\/-15kV IEC, SOD-523","date_code":"","package_case":"SOD-523 (1.6 x 0.8 x 0.6 mm)","in_stock":11258,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/PESD5V0V1BL.pdf","price":"$0.025 @ 10ku","product_introduction":"The PESD5V0V1BL from Nexperia is a unidirectional ESD protection diode in an ultra-small SOD-523 surface-mount package, designed to protect high-speed signal lines from electrostatic discharge (ESD) and cable discharge events (CDE) without degrading signal integrity. With a working voltage of 5V, the device is optimized for protecting 3.3V and 5V signal lines commonly found in consumer electronics, computing, and communication equipment. The ultra-low junction capacitance of 0.5pF typical ensures minimal signal degradation on high-speed interfaces operating at data rates up to several Gbps, including USB 2.0, Ethernet, and HDMI. The device provides IEC 61000-4-2 ESD protection at +\/-15kV contact discharge and +\/-25kV air-gap discharge, meeting the highest ESD protection levels required for consumer devices with exposed connectors. The low dynamic resistance of 0.5 ohm typical results in a clamping voltage of only 13V at 2A peak pulse current, keeping the protected transceiver well within safe voltage limits during an ESD event. The unidirectional configuration is suitable for DC-biased signal lines where the signal only swings positive relative to ground. The miniature SOD-523 package (1.6 x 0.8 x 0.6mm) occupies minimal board space near connectors, enabling ESD protection in space-constrained designs such as smartphones, tablets, and wearable devices.","working_principle":"The PESD5V0V1BL operates as a unidirectional transient voltage suppression (TVS) diode for ESD protection. Key operating principles include: (1) Normal Operation - when the signal line voltage is below the working voltage (5V), the TVS diode presents a very high impedance with maximum leakage current of only 30nA, effectively invisible to the signal; the 0.5pF junction capacitance is in parallel with the signal line but is small enough to not affect signal integrity at multi-Gbps data rates; (2) ESD Clamping - when an ESD event drives the signal line voltage above the breakdown voltage (6V minimum), the diode enters avalanche breakdown and presents a low impedance path to ground, shunting the ESD current away from the protected IC; the clamping voltage is 13V maximum at 2A peak pulse current; (3) Unidirectional Operation - the device only clamps positive transients (signal above GND); for negative transients, the forward diode characteristic conducts at approximately 1.2V; this is suitable for DC-biased signal lines; (4) Low Capacitance - the small junction area required for 0.5pF capacitance is achieved through specialized process technology; this low capacitance preserves signal eye diagram quality at high data rates; (5) Dynamic Resistance - the 0.5 ohm dynamic resistance represents the incremental resistance during ESD conduction; lower Rdyn results in lower clamping voltage for a given ESD current, providing better protection margin.","pin_description":"
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