The TPD4EUSB30DQAR from Texas Instruments is a 4-channel ESD protection diode array designed for USB 3.0 interfaces, providing IEC 61000-4-2 Level 4 ESD protection with 0.25pF line capacitance in a UQFN-10 package.<\/p>\n
| Canales<\/td>\n | 4 (differential pairs)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESD Rating (IEC 61000-4-2)<\/td>\n | +\/-8kV Contact, +\/-15kV Air Gap<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Line Capacitance<\/td>\n | 0.25 pF (typ, data lines)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Clamping Voltage<\/td>\n | 7.5V @ IPP=3.5A (8kV IEC)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Working Voltage (VRWM)<\/td>\n | 3.6V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Breakdown Voltage<\/td>\n | 6.5V (min)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Leakage Current<\/td>\n | 0.1 nA (typ)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Dynamic Resistance<\/td>\n | 0.3 ohm (typ)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Data Rate Support<\/td>\n | Up to 10 Gbps (USB 3.1 Gen 2)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Paquete<\/td>\n | UQFN-10 (2.5 x 1.0 x 0.55mm)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -40 to +125 C<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The TPD4EUSB30DQAR from Texas Instruments is a 4-channel ESD protection diode array designed for USB 3.0 interfaces, providing IEC 61000-4-2 Level 4 ESD protection with 0.25pF line capacitance in a UQFN-10 package. Key Specifications Channels 4 (differential pairs) ESD Rating (IEC 61000-4-2) +\/-8kV Contact, +\/-15kV Air Gap Line Capacitance 0.25 pF (typ, data […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[138],"class_list":["post-3761","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-ti"],"acf":{"brief_explanation":"4-ch ESD for USB 3.0, 0.25pF, +\/-8kV IEC, 10Gbps, flow-through UQFN-10","date_code":"","package_case":"UQFN-10 (2.5 x 1.0 x 0.55 mm, DQA package)","in_stock":7782,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/tpd4eusb30.pdf","price":"$0.42 @ 1ku","product_introduction":"The TPD4EUSB30DQAR from Texas Instruments is a 4-channel transient voltage suppression (TVS) diode array specifically designed to protect USB 3.0 and USB 3.1 SuperSpeed differential signal pairs from electrostatic discharge (ESD) and electrical fast transient (EFT) events. The device features ultra-low line capacitance of 0.25pF typical, which preserves signal integrity at data rates up to 10Gbps (USB 3.1 Gen 2) by minimizing insertion loss, return loss, and intra-pair skew on the high-speed differential pairs. The TPD4EUSB30 provides IEC 61000-4-2 Level 4 ESD protection at +\/-8kV contact discharge and +\/-15kV air-gap discharge, meeting the rigorous ESD requirements for consumer electronics with exposed USB ports. The low dynamic resistance of 0.3 ohm typical ensures a low clamping voltage of 7.5V at the rated 8kV IEC discharge current, keeping the protected transceiver within safe voltage limits. The flow-through pinout routes the differential pairs straight through the device, simplifying PCB layout and maintaining signal path symmetry for optimal high-speed performance. The working voltage of 3.6V accommodates the USB 3.0 signal swing with adequate margin. The device is housed in a tiny UQFN-10 package (2.5 x 1.0 x 0.55mm) that fits in the limited space near USB connectors on modern devices.","working_principle":"The TPD4EUSB30DQAR operates as a bidirectional TVS diode array for high-speed differential signal ESD protection. Key subsystems include: (1) ESD Clamp Diodes - each data line has a steering diode to the VCC rail and a steering diode to the GND rail; when a positive ESD event occurs on a data line, the diode to VCC conducts, shunting the ESD current to the VCC bypass capacitor; for negative events, the diode to GND conducts; (2) Ultra-Low Capacitance - the steering diodes are designed with minimum junction area to achieve 0.25pF capacitance; this low capacitance is critical for high-speed signals because it minimizes signal degradation (insertion loss and eye diagram degradation) at data rates up to 10Gbps; (3) Dynamic Resistance - the 0.3 ohm dynamic resistance represents the slope of the I-V curve during ESD clamping; lower dynamic resistance means lower clamping voltage for a given ESD current, providing better protection; the low clamping voltage of 7.5V at 8kV IEC is well below the typical USB transceiver absolute maximum of 5.5V plus margin; (4) Flow-Through Routing - the pinout places D+ and D- of each differential pair on adjacent pins, allowing the signal traces to pass straight through the device without vias or stubs, minimizing signal path asymmetry and intra-pair skew.","pin_description":"
|