The 2N2222A from onsemi is a general-purpose NPN silicon switching transistor in a TO-18 metal can package, rated for 40V VCEO, 600mA IC, and 625mW power dissipation. One of the most widely used transistors since the 1960s.<\/p>\n
| Tipo<\/td>\n | NPN Silicon Bipolar Junction Transistor<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| VCEO (Collector-Emitter)<\/td>\n | 40V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| VCBO (Collector-Base)<\/td>\n | 75V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| VEBO (Emitter-Base)<\/td>\n | 6.0V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| IC (Continuous Collector Current)<\/td>\n | 600mA (onsemi) \/ 800mA (military)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| hFE (DC Current Gain)<\/td>\n | 100-300 @ IC=150mA, VCE=10V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| VCE(sat)<\/td>\n | 0.3V @ IC=150mA, IB=15mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| VBE(sat)<\/td>\n | 0.6-1.2V @ IC=150mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| fT (Transition Frequency)<\/td>\n | 300MHz<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| Power Dissipation<\/td>\n | 625mW @ TA=25C (TO-92) \/ 1W @ TC=25C (TO-18)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| Turn-On Time<\/td>\n | 35ns (typ)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| Turn-Off Time<\/td>\n | 300ns (typ)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| Paquete<\/td>\n | TO-18 (metal can) \/ TO-92 (plastic)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||
| Temperatura de funcionamiento<\/td>\n | -65 to +150 C (TJ)<\/td>\n<\/tr>\n<\/table>\nCaracter\u00edsticas<\/h2>\nAplicaciones<\/h2>\nProduct Overview The 2N2222A from onsemi is a general-purpose NPN silicon switching transistor in a TO-18 metal can package, rated for 40V VCEO, 600mA IC, and 625mW power dissipation. One of the most widely used transistors since the 1960s. Key Specifications Type NPN Silicon Bipolar Junction Transistor VCEO (Collector-Emitter) 40V VCBO (Collector-Base) 75V VEBO (Emitter-Base) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-3748","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"NPN general-purpose BJT, 40V\/600mA, hFE 100-300, 300MHz fT, TO-18\/TO-92","date_code":"","package_case":"TO-18 (metal can, 5.3mm dia) \/ TO-92 (plastic, 4.5 x 4.1mm)","in_stock":13119,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/2N2222A-D.PDF","price":"$0.10 @ 1ku","product_introduction":"The 2N2222A from onsemi is one of the most widely recognized and used general-purpose NPN bipolar junction transistors in the electronics industry. Originally introduced in the 1960s, it remains a go-to device for medium-current switching and amplification applications. The transistor features a collector-emitter voltage rating of 40V and continuous collector current of 600mA (TO-92 plastic) or 800mA (TO-18 metal can military versions), making it suitable for driving small loads such as LEDs, relays, small motors, and other transistors. The DC current gain (hFE) of 100-300 at IC=150mA provides adequate sensitivity for direct drive from 5V logic gates or microcontroller pins through a base resistor. The low collector-emitter saturation voltage of 0.3V at 150mA minimizes power loss when used as a switch. A transition frequency of 300MHz makes the device usable for RF and video applications up to VHF frequencies. Switching times of 35ns turn-on and 300ns turn-off (saturated) are adequate for most low-frequency switching applications including relay drivers and LED dimming. Military-qualified versions (JAN2N2222A, JANTX2N2222A, JANTXV2N2222A) are available in the hermetically sealed TO-18 metal can package for high-reliability applications. The commercial TO-92 plastic version offers the same electrical performance at lower cost. The 2N2222A is complemented by the PNP 2N2907A for push-pull and H-bridge configurations.","working_principle":"The 2N2222A operates as a current-controlled NPN bipolar junction transistor. Key operating principles include: (1) Forward Active Mode - when the base-emitter junction is forward-biased (VBE > 0.6V) and the base-collector junction is reverse-biased, emitter electrons are injected into the base region; most of these electrons cross the thin base and are collected by the reverse-biased collector; the collector current (IC) is proportional to the base current (IB) through the DC current gain (hFE = IC\/IB, typically 100-300 at 150mA); (2) Saturation Mode - when both junctions are forward-biased, the transistor is fully ON with minimum VCE(sat) of 0.3V at 150mA; in this mode, increasing IB beyond the saturation point (IB > IC\/hFE) does not significantly increase IC; this is the switch-ON state; (3) Cutoff Mode - when the base-emitter junction is not forward-biased (VBE < 0.5V), only small leakage currents flow (ICBO < 10nA); this is the switch-OFF state; (4) Switching Operation - to use as a switch, a base resistor limits IB to the desired value; for a 600mA load with hFE=100, IB > 6mA is needed; a 5V logic output through a 680-ohm base resistor provides approximately 6.5mA base drive; (5) Frequency Response - the transition frequency (fT) of 300MHz is the frequency at which the common-emitter current gain drops to unity; practical amplifier bandwidth is limited to fT\/hFE or about 1-3MHz for typical gain settings.","pin_description":"
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