{"id":3716,"date":"2026-06-08T02:19:39","date_gmt":"2026-06-08T02:19:39","guid":{"rendered":"https:\/\/materialparts.com\/csd18531q5a\/"},"modified":"2026-06-08T02:19:39","modified_gmt":"2026-06-08T02:19:39","slug":"csd18531q5a","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/csd18531q5a\/","title":{"rendered":"CSD18531Q5A"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The CSD18531Q5A from Texas Instruments is a 60-V N-channel NexFET power MOSFET with 3.5mOhm RDS(on) at VGS=10V. It features ultra-low gate charge, avalanche rating, and logic-level gate drive in a 5mm x 6mm SON package.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>VDS<\/td>\n<td>60V<\/td>\n<\/tr>\n<tr>\n<td>VGS<\/td>\n<td>+\/-20V<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) at VGS=10V<\/td>\n<td>3.5mOhm (typ) \/ 4.6mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) at VGS=4.5V<\/td>\n<td>4.4mOhm (typ) \/ 5.8mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>ID (silicon limited)<\/td>\n<td>134A at TC=25C<\/td>\n<\/tr>\n<tr>\n<td>ID (package limited)<\/td>\n<td>100A<\/td>\n<\/tr>\n<tr>\n<td>QG (total at 10V)<\/td>\n<td>36nC (typ)<\/td>\n<\/tr>\n<tr>\n<td>EAS (avalanche energy)<\/td>\n<td>224mJ<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-55 to 175 C<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Ultra-low Qg and Qgd for high-efficiency switching<\/li>\n<li>Low thermal resistance (RthetaJC = 1.0 C\/W)<\/li>\n<li>Avalanche rated for rugged applications<\/li>\n<li>Logic-level gate drive (VGS(th) = 1.8V typ)<\/li>\n<li>Lead-free terminal plating, RoHS compliant, halogen free<\/li>\n<li>SON 5mm x 6mm plastic package for low profile<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>DC-DC conversion (buck, boost, buck-boost)<\/li>\n<li>Secondary-side synchronous rectification<\/li>\n<li>Battery motor control<\/li>\n<li>Power management in servers and telecom<\/li>\n<li>Hot-swap and OR-ing circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The CSD18531Q5A from Texas Instruments is a 60-V N-channel NexFET power MOSFET with 3.5mOhm RDS(on) at VGS=10V. It features ultra-low gate charge, avalanche rating, and logic-level gate drive in a 5mm x 6mm SON package. Key Specifications VDS 60V VGS +\/-20V RDS(on) at VGS=10V 3.5mOhm (typ) \/ 4.6mOhm (max) RDS(on) at VGS=4.5V 4.4mOhm [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[138],"class_list":["post-3716","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-ti"],"acf":{"brief_explanation":"60V N-ch NexFET MOSFET, 3.5mOhm, 134A, 36nC Qg, SON 5x6mm, avalanche rated","date_code":"","package_case":"SON 8-VSONP (5.0 x 6.0 x 1.0 mm)","in_stock":9618,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/csd18531q5a.pdf","price":"$1.10 @ 100pc","product_introduction":"The CSD18531Q5A from Texas Instruments is a 60-V N-channel NexFET power MOSFET designed to minimize losses in power conversion applications. With an ultra-low RDS(on) of 3.5mOhm at VGS=10V and total gate charge of only 36nC, it achieves high efficiency across a wide load range. The device is avalanche rated at 224mJ, providing robustness in unclamped inductive switching scenarios. The logic-level gate threshold (VGS(th) = 1.8V typical) enables direct drive from 3.3V or 5V microcontrollers. Packaged in a low-profile 5mm x 6mm SON package with a junction-to-case thermal resistance of only 1.0 C\/W, the CSD18531Q5A is ideal for high-current, space-constrained power conversion applications including DC-DC converters, synchronous rectifiers, and motor drives.","working_principle":"The CSD18531Q5A operates as an N-channel enhancement-mode power MOSFET. Key subsystems include: (1) Vertical NexFET Structure - a vertically-diffused MOSFET with charge-compensation technology achieves ultra-low specific on-resistance; (2) Gate Oxide - thin gate oxide enables low threshold voltage (1.8V) for logic-level drive while maintaining +\/-20V absolute maximum VGS; (3) Body Diode - an intrinsic body diode provides reverse conduction path during dead-time in synchronous rectification; reverse recovery charge is 100nC; (4) Avalanche Capability - the device is designed to absorb energy during avalanche breakdown (224mJ single pulse), protecting against voltage spikes from inductive loads; (5) SON Package - the 5x6mm package with exposed thermal pad provides RthetaJC of 1.0 C\/W for efficient heat extraction.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal<\/td><\/tr><tr><td>2<\/td><td>Gate<\/td><td>Input<\/td><td>Gate drive input<\/td><\/tr><tr><td>3<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (thermal pad)<\/td><\/tr><tr><td>4-8<\/td><td>Source<\/td><td>Power<\/td><td>Source terminals (paralleled)<\/td><\/tr><tr><td>Pad<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (exposed thermal pad)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>DC-DC buck converters: 12V\/5V\/3.3V POL regulators at 3-20A output<\/li><li>Secondary-side synchronous rectification in isolated power supplies<\/li><li>Motor drive H-bridge: battery-powered motor control at 12-48V<\/li><li>Hot-swap and OR-ing: server and telecom power distribution<\/li><li>Load switch: high-current switching with logic-level gate drive<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>TI<\/td><td>CSD18532Q5A<\/td><td>SON 5x6<\/td><td>40V, 2.4mOhm, lower VDS<\/td><\/tr><tr><td>Infineon<\/td><td>BSC060N10NS3G<\/td><td>SuperSO8<\/td><td>100V, 6mOhm<\/td><\/tr><tr><td>onsemi<\/td><td>NTMFS4C05N<\/td><td>LFPAK56<\/td><td>40V, 3.3mOhm<\/td><\/tr><tr><td>Vishay<\/td><td>SI7336ADN-T1-GE3<\/td><td>PowerPAK 5x6<\/td><td>60V, 3.7mOhm<\/td><\/tr><tr><td>TI<\/td><td>CSD19531Q5A<\/td><td>SON 5x6<\/td><td>100V version<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3716","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=3716"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3716\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=3716"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=3716"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=3716"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=3716"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}