{"id":3699,"date":"2026-06-08T02:14:07","date_gmt":"2026-06-08T02:14:07","guid":{"rendered":"https:\/\/materialparts.com\/at45db641e-shn-t\/"},"modified":"2026-06-08T02:14:07","modified_gmt":"2026-06-08T02:14:07","slug":"at45db641e-shn-t","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/at45db641e-shn-t\/","title":{"rendered":"AT45DB641E-SHN-T"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The AT45DB641E-SHN-T from Renesas is a 64Mbit serial DataFlash with SPI interface operating at up to 85MHz. It features dual SRAM buffers, flexible page architecture (256\/264 bytes), and operates from 1.7V to 3.6V in an 8-pin SOIC package.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Densidad<\/td>\n<td>64Mbit (8MB)<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>SPI (Mode 0 and 3)<\/td>\n<\/tr>\n<tr>\n<td>Max Clock Frequency<\/td>\n<td>85MHz<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>1.7V to 3.6V<\/td>\n<\/tr>\n<tr>\n<td>Page Size<\/td>\n<td>256 or 264 bytes (configurable)<\/td>\n<\/tr>\n<tr>\n<td>SRAM Buffers<\/td>\n<td>2 x 256\/264 bytes<\/td>\n<\/tr>\n<tr>\n<td>Endurance<\/td>\n<td>100,000 program\/erase cycles<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-40 to 85 C<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>Dual SRAM data buffers for continuous write operations<\/li>\n<li>Configurable page size: 256 or 264 bytes<\/li>\n<li>SPI Mode 0 and Mode 3 compatible<\/li>\n<li>85MHz maximum clock frequency<\/li>\n<li>Flexible erase options: page, block, sector, chip<\/li>\n<li>Hardware and software data protection<\/li>\n<li>Deep power-down mode: 5uA<\/li>\n<li>20-year data retention<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Digital voice and image storage<\/li>\n<li>Embedded system program storage<\/li>\n<li>Data logging applications<\/li>\n<li>Industrial firmware updates<\/li>\n<li>IoT device configuration storage<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The AT45DB641E-SHN-T from Renesas is a 64Mbit serial DataFlash with SPI interface operating at up to 85MHz. It features dual SRAM buffers, flexible page architecture (256\/264 bytes), and operates from 1.7V to 3.6V in an 8-pin SOIC package. Key Specifications Density 64Mbit (8MB) Interface SPI (Mode 0 and 3) Max Clock Frequency 85MHz [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[12],"class_list":["post-3699","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-renesas"],"acf":{"brief_explanation":"64Mbit SPI DataFlash, 85MHz, dual SRAM buffers, 1.7-3.6V, configurable page, SOIC-8","date_code":"","package_case":"SOIC-8 (5.28 x 5.23 x 1.5 mm)","in_stock":2515,"datasheet":"https:\/\/www.renesas.com\/us\/en\/document\/dst\/at45db641e-datasheet","price":"$1.52 @ 1ku","product_introduction":"The AT45DB641E-SHN-T from Renesas (formerly Adesto Technologies) is a 64Mbit serial DataFlash memory designed for digital voice, image, program code, and data storage applications. It features a serial peripheral interface (SPI) compatible with Mode 0 and Mode 3, supporting clock frequencies up to 85MHz for fast data throughput. A unique feature is the dual 256\/264-byte SRAM data buffers that enable continuous data writing while the main memory is being programmed. The page size is user-configurable between 256 and 264 bytes. Flexible erase options include page (256B), block (2KB), sector (256KB), and chip erase. Advanced hardware and software data protection includes individual sector protection and permanent read-only locking. Operating from 1.7V to 3.6V with deep power-down current of 5uA, it is ideal for battery-powered applications.","working_principle":"The AT45DB641E-SHN-T operates as a serial DataFlash with dual-buffer architecture. Key subsystems include: (1) SPI Command Interface - 8-bit opcodes control read, program, erase, and buffer operations; (2) Main Memory Array - 64Mbit of Flash organized in 32,768 pages of 256\/264 bytes; (3) Dual SRAM Buffers - two independent 256\/264-byte buffers allow simultaneous read and write operations; data can be written to a buffer while the other buffer is being transferred to main memory; (4) Page Programming Engine - internal state machine handles page programming with auto-erase; (5) Protection Logic - sector lock-down and software protection prevent accidental data modification; (6) Power Management - active, standby (25uA), and deep power-down (5uA) modes.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>CS#<\/td><td>Input<\/td><td>Chip select (active low)<\/td><\/tr><tr><td>2<\/td><td>SO<\/td><td>Output<\/td><td>Serial data output<\/td><\/tr><tr><td>3<\/td><td>WP#<\/td><td>Input<\/td><td>Hardware write protect (active low)<\/td><\/tr><tr><td>4<\/td><td>VSS<\/td><td>Power<\/td><td>Ground<\/td><\/tr><tr><td>5<\/td><td>SI<\/td><td>Input<\/td><td>Serial data input<\/td><\/tr><tr><td>6<\/td><td>SCK<\/td><td>Input<\/td><td>Serial clock<\/td><\/tr><tr><td>7<\/td><td>HOLD#<\/td><td>Input<\/td><td>Suspend serial communication (active low)<\/td><\/tr><tr><td>8<\/td><td>VDD<\/td><td>Power<\/td><td>Power supply (1.7V to 3.6V)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Digital voice and image storage with continuous data streaming<\/li><li>Embedded system program code and firmware storage<\/li><li>Data logging applications requiring dual-buffer write capability<\/li><li>Industrial firmware update and parameter storage<\/li><li>IoT device configuration and calibration data storage<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Macronix<\/td><td>MX25L6433FMI-08G<\/td><td>SOIC-8<\/td><td>64Mbit, 80MHz, standard SPI<\/td><\/tr><tr><td>Winbond<\/td><td>W25Q64JVSSIM<\/td><td>SOIC-8<\/td><td>64Mbit, 133MHz, Quad SPI<\/td><\/tr><tr><td>GigaDevice<\/td><td>GD25Q64CSIG<\/td><td>SOIC-8<\/td><td>64Mbit, 120MHz, Quad SPI<\/td><\/tr><tr><td>Infineon<\/td><td>S25FL064LABMFI010<\/td><td>SOIC-8<\/td><td>64Mbit, 108MHz, Quad SPI<\/td><\/tr><tr><td>Microchip<\/td><td>SST26VF064B-104I\/SM<\/td><td>SOIC-8<\/td><td>64Mbit, 104MHz, SQI<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3699","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=3699"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3699\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=3699"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=3699"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=3699"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=3699"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}