{"id":3635,"date":"2026-06-06T12:17:58","date_gmt":"2026-06-06T12:17:58","guid":{"rendered":"https:\/\/materialparts.com\/is43tr16128b-125kbli-tr\/"},"modified":"2026-06-06T12:17:58","modified_gmt":"2026-06-06T12:17:58","slug":"is43tr16128b-125kbli-tr","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/is43tr16128b-125kbli-tr\/","title":{"rendered":"IS43TR16128B-125KBLI-TR"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IS43TR16128B-125KBLI-TR from ISSI (Integrated Silicon Solution Inc.) is a 2Gb DDR3 SDRAM organized as 128M x 16 bits, featuring a speed grade of DDR3-1600K (CL=11) with industrial temperature range. Packaged in a 96-ball TFBGA (9mm x 13mm), this device supports standard 1.5V operation with backward-compatible 1.35V low-voltage variant available, and provides high-speed data transfer rates with system frequency up to 800 MHz.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Densidad<\/td>\n<td>2Gb (128M x 16)<\/td>\n<\/tr>\n<tr>\n<td>Technology<\/td>\n<td>DDR3 SDRAM<\/td>\n<\/tr>\n<tr>\n<td>Grado de velocidad<\/td>\n<td>DDR3-1600K (CL=11-11-11)<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>VDD\/VDDQ = 1.5V +\/- 0.075V<\/td>\n<\/tr>\n<tr>\n<td>Internal Banks<\/td>\n<td>8<\/td>\n<\/tr>\n<tr>\n<td>Burst Length<\/td>\n<td>4 \/ 8 (programmable)<\/td>\n<\/tr>\n<tr>\n<td>Latencia CAS<\/td>\n<td>Programmable<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-40\u00b0C to +95\u00b0C (Industrial)<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>8n-bit prefetch architecture<\/li>\n<li>Programmable CAS Latency and Additive Latency<\/li>\n<li>On-die termination (ODT) with dynamic ODT support<\/li>\n<li>Write leveling for fly-by topology<\/li>\n<li>Auto self refresh (ASR) with partial array self refresh<\/li>\n<li>Asynchronous RESET pin<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Industrial computing and embedded systems<\/li>\n<li>Networking and telecommunications equipment<\/li>\n<li>Automotive infotainment systems (AEC-Q100 grade)<\/li>\n<li>Digital signal processing platforms<\/li>\n<li>Military and aerospace electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IS43TR16128B-125KBLI-TR from ISSI (Integrated Silicon Solution Inc.) is a 2Gb DDR3 SDRAM organized as 128M x 16 bits, featuring a speed grade of DDR3-1600K (CL=11) with industrial temperature range. Packaged in a 96-ball TFBGA (9mm x 13mm), this device supports standard 1.5V operation with backward-compatible 1.35V low-voltage variant available, and provides high-speed [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[26,13],"tags":[],"chip_brand":[210],"class_list":["post-3635","post","type-post","status-publish","format-standard","hentry","category-digital-signal-processors-dsp","category-integrated-circuits-ics","chip_brand-issi"],"acf":{"brief_explanation":"2Gb DDR3 SDRAM, 128Mx16, DDR3-1600K, CL=11, 1.5V, 96-TFBGA, Industrial Temp","date_code":"","package_case":"96-TFBGA (9mm x 13mm)","in_stock":8866,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/IS43-46TR16128B_82560B.pdf","price":"","product_introduction":"The IS43TR16128B-125KBLI-TR from ISSI is a 2-gigabit DDR3 SDRAM organized as 128 million words by 16 bits. This device operates at DDR3-1600 speed grade with CL=11-11-11 timing, providing high bandwidth memory access for demanding applications. The 8n-bit prefetch architecture and 8 internal banks enable efficient data throughput. Housed in a 96-ball TFBGA package measuring 9mm x 13mm, it supports standard 1.5V VDD\/VDDQ operation with industrial temperature range from -40\u00b0C to +95\u00b0C. The -TR suffix indicates tape and reel packaging for automated assembly.","working_principle":"The DDR3 SDRAM uses an 8n-bit prefetch architecture where each read or write access transfers 8n bits of data per clock cycle. The device is organized into 8 independent banks for concurrent operation, allowing one bank to be accessed while another is being precharged. On-die termination (ODT) eliminates the need for external termination resistors on the signal lines. Write leveling compensates for clock skew in fly-by topology designs. The DLL (Delay-Locked Loop) synchronizes data output with the external clock for precise timing alignment.","pin_description":"<table><tr><th>Pin Group<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>Address<\/td><td>A0-A13<\/td><td>Row\/Column address inputs<\/td><\/tr><tr><td>Bank<\/td><td>BA0-BA2<\/td><td>Bank address select<\/td><\/tr><tr><td>Data<\/td><td>DQ0-DQ15<\/td><td>Data bus (bi-directional)<\/td><\/tr><tr><td>Data Strobe<\/td><td>LDQS\/LDQS#, UDQS\/UDQS#<\/td><td>Lower\/Upper data strobe<\/td><\/tr><tr><td>Data Mask<\/td><td>LDM\/UDM<\/td><td>Lower\/Upper data mask<\/td><\/tr><tr><td>Control<\/td><td>CS#, RAS#, CAS#, WE#<\/td><td>Chip select, command inputs<\/td><\/tr><tr><td>Clock<\/td><td>CK\/CK#<\/td><td>Differential clock<\/td><\/tr><tr><td>Control<\/td><td>CKE<\/td><td>Clock enable<\/td><\/tr><tr><td>Control<\/td><td>ODT<\/td><td>On-die termination enable<\/td><\/tr><tr><td>Control<\/td><td>RESET#<\/td><td>Asynchronous reset<\/td><\/tr><tr><td>Power<\/td><td>VDD\/VDDQ<\/td><td>1.5V core\/I\/O supply<\/td><\/tr><tr><td>Power<\/td><td>VREFCA\/VREFDQ<\/td><td>Reference voltages<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Industrial embedded computing platforms requiring wide temperature DRAM<\/li><li>Networking routers and switches with high bandwidth memory demands<\/li><li>Automotive infotainment and ADAS systems (AEC-Q100 qualified variants)<\/li><li>Digital signal processing and video processing systems<\/li><li>Military and aerospace electronics with extended temperature requirements<\/li><\/ul>","alternative_models":"<table><tr><th>Model<\/th><th>Notes<\/th><\/tr><tr><td>IS43TR16128BL-125KBLI<\/td><td>Low-voltage 1.35V version, backward compatible<\/td><\/tr><tr><td>MT41K128M16-125K<\/td><td>Micron equivalent DDR3L-1600<\/td><\/tr><tr><td>EM6AB16CWKG-12H<\/td><td>Etron equivalent DDR3-1600<\/td><\/tr><tr><td>H5TQ4G63CFR-xxC<\/td><td>SK Hynix equivalent DDR3<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3635","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=3635"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3635\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=3635"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=3635"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=3635"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=3635"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}