{"id":3090,"date":"2026-05-30T02:46:12","date_gmt":"2026-05-30T02:46:12","guid":{"rendered":"https:\/\/materialparts.com\/sst39vf040-70-4c-nhe\/"},"modified":"2026-05-30T02:46:12","modified_gmt":"2026-05-30T02:46:12","slug":"sst39vf040-70-4c-nhe","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/sst39vf040-70-4c-nhe\/","title":{"rendered":"SST39VF040-70-4C-NHE"},"content":{"rendered":"

Productos<\/h2>\n

The SST39VF040-70-4C-NHE is a 4 Mbit (512K x8) CMOS Multi-Purpose Flash (MPF) manufactured with Microchip’s proprietary SuperFlash technology. Operating at 2.7V-3.6V with 70 ns access time, it features sector-erase capability with uniform 4 KByte sectors and byte-program time of 14 us typical, housed in a 32-lead PLCC package for commercial temperature range.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Densidad<\/td>\n4 Mbit (512K x8)<\/td>\n<\/tr>\n
Tensi\u00f3n de alimentaci\u00f3n<\/td>\n2,7 V a 3,6 V<\/td>\n<\/tr>\n
Read Access Time<\/td>\n70 ns<\/td>\n<\/tr>\n
Sector Size<\/td>\n4 KByte uniform sectors<\/td>\n<\/tr>\n
Sector-Erase Time<\/td>\n18 ms typical<\/td>\n<\/tr>\n
Chip-Erase Time<\/td>\n70 ms typical<\/td>\n<\/tr>\n
Byte-Program Time<\/td>\n14 us typical<\/td>\n<\/tr>\n
Endurance<\/td>\n100,000 cycles typical<\/td>\n<\/tr>\n
Data Retention<\/td>\n> 100 years<\/td>\n<\/tr>\n
Active Current<\/td>\n5 mA typical at 14 MHz<\/td>\n<\/tr>\n
Standby Current<\/td>\n1 uA typical<\/td>\n<\/tr>\n
Paquete<\/td>\nPLCC-32<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n0C to +70C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Single voltage read and write operations: 2.7-3.6V<\/li>\n
  • SuperFlash technology for fixed erase\/program times<\/li>\n
  • Sector-erase capability with uniform 4 KByte sectors<\/li>\n
  • Automatic write timing with internal VPP generation<\/li>\n
  • End-of-write detection via Toggle Bit or Data# Polling<\/li>\n
  • JEDEC standard Flash EEPROM pinouts and command sets<\/li>\n
  • Hardware and Software Data Protection<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Firmware storage and in-system updates<\/li>\n
    • Embedded system program storage<\/li>\n
    • Configuration data storage<\/li>\n
    • Control industrial y automatizaci\u00f3n<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SST39VF040-70-4C-NHE is a 4 Mbit (512K x8) CMOS Multi-Purpose Flash (MPF) manufactured with Microchip’s proprietary SuperFlash technology. Operating at 2.7V-3.6V with 70 ns access time, it features sector-erase capability with uniform 4 KByte sectors and byte-program time of 14 us typical, housed in a 32-lead PLCC package for commercial temperature range. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[134],"class_list":["post-3090","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-microchip"],"acf":{"brief_explanation":"4Mbit (512Kx8) Multi-Purpose Flash, 2.7-3.6V, 70ns, PLCC-32, SuperFlash","date_code":"","package_case":"PLCC-32 (11.43 x 13.21 mm)","in_stock":330,"datasheet":"https:\/\/ww1.microchip.com\/downloads\/en\/DeviceDoc\/20005023C.pdf","price":"$2.00 @ 100+","product_introduction":"The SST39VF040-70-4C-NHE is a 4 Mbit (512K x8) CMOS Multi-Purpose Flash memory device manufactured with Microchip's proprietary SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector provide superior reliability compared to alternative flash approaches. Operating from a single 2.7V to 3.6V supply, the device supports fast byte-programming at 14 us typical and sector-erase operations in 18 ms typical. The SuperFlash technology ensures fixed erase and program times independent of accumulated erase\/program cycles, eliminating the need for software or hardware de-rating over the device lifetime.","working_principle":"The SST39VF040 uses SuperFlash technology with a split-gate cell architecture. For programming, a high voltage generated internally by the charge pump causes Fowler-Nordheim tunneling through the thick oxide to inject charge onto the floating gate, raising the cell threshold. For erasure, the reverse process removes charge from the floating gate. The device performs automatic write timing with an internal VPP generator, eliminating the need for external high-voltage supplies. End-of-write detection is provided through Toggle Bit or Data# Polling methods. Hardware and software data protection schemes prevent inadvertent writes during power transitions.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1-8<\/td>A0-A7<\/td>Input<\/td>Address inputs (low byte)<\/td><\/tr>
      9-12<\/td>DQ0-DQ3<\/td>I\/O<\/td>Data inputs\/outputs (low nibble)<\/td><\/tr>
      13<\/td>GND<\/td>Ground<\/td>Ground reference<\/td><\/tr>
      14-17<\/td>DQ4-DQ7<\/td>I\/O<\/td>Data inputs\/outputs (high nibble)<\/td><\/tr>
      18<\/td>WE#<\/td>Input<\/td>Write enable (active low)<\/td><\/tr>
      19-26<\/td>A8-A18<\/td>Input<\/td>Address inputs (high byte)<\/td><\/tr>
      27<\/td>OE#<\/td>Input<\/td>Output enable (active low)<\/td><\/tr>
      28<\/td>CE#<\/td>Input<\/td>Chip enable (active low)<\/td><\/tr>
      30<\/td>VDD<\/td>Power<\/td>Supply voltage 2.7-3.6V<\/td><\/tr><\/table>","application_scenarios":"
      • Firmware and bootloader storage in embedded systems<\/li>
      • In-system programmable configuration memory<\/li>
      • Industrial control program storage with field update capability<\/li>
      • Consumer electronics parameter and calibration data storage<\/li>
      • Networking equipment code storage and updates<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Microchip<\/td>SST39VF040-70-4C-WHE<\/td>TSOP-32<\/td>Same density, TSOP package<\/td><\/tr>
        Microchip<\/td>SST39LF040-45-4C-NHE<\/td>PLCC-32<\/td>3.0-3.6V, 45ns faster access<\/td><\/tr>
        Microchip<\/td>SST39VF020-70-4C-NHE<\/td>PLCC-32<\/td>2 Mbit, lower density option<\/td><\/tr>
        ISSI<\/td>IS29GL032-90DLE<\/td>PLCC-32<\/td>32Mbit, alternative flash<\/td><\/tr>
        Microchip<\/td>SST39VF040-90-4C-NHE<\/td>PLCC-32<\/td>90ns slower speed grade<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3090","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=3090"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/3090\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=3090"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=3090"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=3090"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=3090"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}