{"id":2801,"date":"2026-05-26T01:23:17","date_gmt":"2026-05-26T01:23:17","guid":{"rendered":"https:\/\/materialparts.com\/fm25cl64b-gtr\/"},"modified":"2026-05-26T01:23:17","modified_gmt":"2026-05-26T01:23:17","slug":"fm25cl64b-gtr","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/fm25cl64b-gtr\/","title":{"rendered":"FM25CL64B-GTR"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The FM25CL64B-GTR from Infineon Technologies is a 64Kbit (8K x 8) serial F-RAM (Ferroelectric RAM) with SPI interface in an SOIC-8 package. It offers NoDelay writes at bus speed, 100 trillion (10^14) read\/write cycle endurance, and 151-year data retention, making it a superior drop-in replacement for serial EEPROM and Flash.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Memory Size<\/td>\n<td>64Kbit (8KB)<\/td>\n<\/tr>\n<tr>\n<td>Organization<\/td>\n<td>8K x 8<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>SPI (Mode 0 and 3)<\/td>\n<\/tr>\n<tr>\n<td>Max Clock Frequency<\/td>\n<td>20MHz<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>2.7V to 3.65V<\/td>\n<\/tr>\n<tr>\n<td>Write Endurance<\/td>\n<td>100 trillion (10^14) cycles<\/td>\n<\/tr>\n<tr>\n<td>Data Retention<\/td>\n<td>151 years @ 65\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Active Current<\/td>\n<td>200\u03bcA @ 1MHz<\/td>\n<\/tr>\n<tr>\n<td>Standby Current<\/td>\n<td>3\u03bcA typ.<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>SOIC-8 (4.9 x 3.9mm)<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-40\u00b0C to +85\u00b0C<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<ul>\n<li>NoDelay writes at bus speed &#8211; no write delays<\/li>\n<li>100 trillion (10^14) read\/write cycle endurance<\/li>\n<td>151-year data retention at 65\u00b0C<\/li>\n<li>Hardware and software write protection<\/li>\n<li>Supports SPI Mode 0 (0,0) and Mode 3 (1,1)<\/li>\n<li>Direct hardware replacement for serial EEPROM<\/li>\n<li>Low power: 200\u03bcA active, 3\u03bcA standby<\/li>\n<li>AEC-Q100 qualified (automotive grade)<\/li>\n<\/ul>\n<h2>Aplicaciones<\/h2>\n<ul>\n<li>Electric vehicle drivetrain systems<\/li>\n<li>Industrial automation and control<\/li>\n<li>Smart metering and data logging<\/li>\n<li>Medical equipment data storage<\/li>\n<li>Automotive electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FM25CL64B-GTR from Infineon Technologies is a 64Kbit (8K x 8) serial F-RAM (Ferroelectric RAM) with SPI interface in an SOIC-8 package. It offers NoDelay writes at bus speed, 100 trillion (10^14) read\/write cycle endurance, and 151-year data retention, making it a superior drop-in replacement for serial EEPROM and Flash. Key Specifications Memory [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":2818,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[173],"class_list":["post-2801","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"64Kbit SPI F-RAM, 20MHz, 10^14 endurance, NoDelay writes, 151yr retention, SOIC-8","date_code":"","package_case":"SOIC-8 (4.9 x 3.9 x 1.25mm)","in_stock":14066,"datasheet":"https:\/\/www.infineon.com\/part\/FM25CL64B-GTR","price":"$2.40 @ 1ku","product_introduction":"The FM25CL64B-GTR from Infineon Technologies is a 64Kbit non-volatile F-RAM memory using an advanced ferroelectric process. Unlike serial Flash and EEPROM, FM25CL64B performs write operations at bus speed with no write delays, enabling the next bus cycle to commence immediately without data polling. With 100 trillion read\/write cycle endurance and 151-year data retention, it is a direct hardware replacement for serial EEPROM in applications requiring frequent or rapid writes.","working_principle":"The FM25CL64B uses ferroelectric RAM (F-RAM) technology where data is stored using ferroelectric polarization rather than charge. Each memory cell contains a ferroelectric capacitor that can be polarized in one of two states, representing a 0 or 1. Read operations involve applying voltage to sense the polarization state, while write operations change the polarization. Since the polarization is non-volatile and does not require charge pumps, writes complete at bus speed with no delay. The read-restore mechanism means every read also refreshes the cell, similar to DRAM but with inherent non-volatility.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>CS<\/td><td>Input<\/td><td>Active-low chip select<\/td><\/tr><tr><td>2<\/td><td>SO<\/td><td>Output<\/td><td>SPI data output (MISO)<\/td><\/tr><tr><td>3<\/td><td>WP<\/td><td>Input<\/td><td>Write protect (active low)<\/td><\/tr><tr><td>4<\/td><td>VSS<\/td><td>Power<\/td><td>Ground<\/td><\/tr><tr><td>5<\/td><td>SI<\/td><td>Input<\/td><td>SPI data input (MOSI)<\/td><\/tr><tr><td>6<\/td><td>SCK<\/td><td>Input<\/td><td>SPI clock<\/td><\/tr><tr><td>7<\/td><td>HOLD<\/td><td>Input<\/td><td>Hold (pause serial operation)<\/td><\/tr><tr><td>8<\/td><td>VDD<\/td><td>Power<\/td><td>Supply voltage (2.7V-3.65V)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Electric vehicle drivetrain parameter storage with frequent writes<\/li><li>Industrial automation event and configuration logging<\/li><li>Smart metering data accumulation and tariff storage<\/li><li>Medical equipment calibration and patient data logging<\/li><li>Automotive ECU non-volatile parameter storage<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>FM25CL64B-DGTR<\/td><td>DFN-8<\/td><td>Same specs, DFN package<\/td><\/tr><tr><td>Infineon<\/td><td>FM25CL64B-G<\/td><td>SOIC-8<\/td><td>Tube version (not T&R)<\/td><\/tr><tr><td>Infineon<\/td><td>FM25V02-GTR<\/td><td>SOIC-8<\/td><td>256Kbit F-RAM upgrade<\/td><\/tr><tr><td>Microchip<\/td><td>93LC76B-I\/SN<\/td><td>SOIC-8<\/td><td>4Kbit SPI EEPROM alternative<\/td><\/tr><tr><td>ON Semi<\/td><td>CAT25128VI-GT3<\/td><td>SOIC-8<\/td><td>128Kbit SPI EEPROM<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2801","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2801"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2801\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/2818"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2801"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2801"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2801"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2801"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}