{"id":2627,"date":"2026-05-24T01:31:16","date_gmt":"2026-05-24T01:31:16","guid":{"rendered":"https:\/\/materialparts.com\/nds356ap\/"},"modified":"2026-05-24T01:31:16","modified_gmt":"2026-05-24T01:31:16","slug":"nds356ap","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/nds356ap\/","title":{"rendered":"NDS356AP"},"content":{"rendered":"

Productos<\/h2>\n

The NDS356AP from onsemi is a P-channel logic-level enhancement mode MOSFET in a SOT-23-3 (SuperSOT-3) package. Rated at -30V VDS and -1.1A with 300mOhm RDS(on) at -4.5V VGS, designed for high-side load switching in portable electronics.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n
VDS (Max)<\/td>\n-30V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n-1.1A<\/td>\n<\/tr>\n
RDS(on) @ VGS=-4.5V<\/td>\n0.3 Ohm max<\/td>\n<\/tr>\n
RDS(on) @ VGS=-10V<\/td>\n0.2 Ohm max<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-0.7V ~ -2.5V<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • P-channel for high-side switching<\/li>\n
  • Logic-level gate drive (4.5V compatible)<\/li>\n
  • SuperSOT-3 package with superior thermal performance<\/li>\n
  • High cell density DMOS technology<\/li>\n
  • Complementary N-channel: NDS331N<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • High-side load switching in notebooks<\/li>\n
    • Power management in portable electronics<\/li>\n
    • Battery disconnect and power gating<\/li>\n
    • DC-DC converter high-side MOSFET<\/li>\n
    • Audio amplifier muting circuit<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NDS356AP from onsemi is a P-channel logic-level enhancement mode MOSFET in a SOT-23-3 (SuperSOT-3) package. Rated at -30V VDS and -1.1A with 300mOhm RDS(on) at -4.5V VGS, designed for high-side load switching in portable electronics. Key Specifications VDS (Max) -30V ID (Continuous) -1.1A RDS(on) @ VGS=-4.5V 0.3 Ohm max RDS(on) @ VGS=-10V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-2627","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"P-ch logic-level MOSFET, -30V, -1.1A, 300mOhm, SOT-23-3 SuperSOT-3","date_code":"","package_case":"SOT-23-3 (SuperSOT-3) (2.9 x 1.3 x 1.0 mm)","in_stock":5657,"datasheet":"https:\/\/www.onsemi.com\/products\/discrete-power-modules\/mosfets\/nds356ap","price":"$0.15 @ 3ku","product_introduction":"The NDS356AP from onsemi is a P-channel logic-level enhancement mode power MOSFET in the SOT-23-3 SuperSOT-3 package. With -30V drain-source voltage and -1.1A continuous drain current, it achieves 300mOhm max RDS(on) at -4.5V gate drive, suitable for high-side load switching from 5V and 3.3V rails. The complementary N-channel NDS331N enables complete push-pull and half-bridge circuit configurations.","working_principle":"The NDS356AP uses a P-channel vertical DMOS structure. When VGS is driven negative (below the threshold), holes form a conductive channel between source and drain. As a P-channel device, it can be used as a high-side switch with the source connected to the positive rail, requiring only a gate voltage lower than the source by the threshold voltage to turn on. This eliminates the need for a gate voltage boost circuit required by N-channel high-side switches.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal<\/td><\/tr>
      2<\/td>Source<\/td>Power<\/td>Source terminal (usually VCC rail)<\/td><\/tr>
      3<\/td>Drain<\/td>Output<\/td>Drain terminal (load connection)<\/td><\/tr><\/table>","application_scenarios":"
      • High-side load switch for 3.3V\/5V power rails<\/li>
      • Battery disconnect switch in portable devices<\/li>
      • Power gating in notebook computers<\/li>
      • Audio amplifier muting and pop suppression<\/li>
      • Half-bridge driver with NDS331N complement<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>NDS331N<\/td>SOT-23<\/td>Complementary N-ch, 20V, 1.3A<\/td><\/tr>
        Vishay<\/td>SI2305DS-T1-E3<\/td>SOT-23<\/td>P-ch, -20V, -1.5A<\/td><\/tr>
        Diodes Inc<\/td>DMP2035U<\/td>SOT-23<\/td>P-ch, -20V, -2A<\/td><\/tr>
        Infineon<\/td>BSS84<\/td>SOT-23<\/td>P-ch, -50V, -130mA<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2627","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2627"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2627\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2627"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2627"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2627"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2627"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}