{"id":2495,"date":"2026-05-21T01:20:12","date_gmt":"2026-05-21T01:20:12","guid":{"rendered":"https:\/\/materialparts.com\/bsc098n10ns5atma1\/"},"modified":"2026-05-21T01:20:12","modified_gmt":"2026-05-21T01:20:12","slug":"bsc098n10ns5atma1","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/bsc098n10ns5atma1\/","title":{"rendered":"BSC098N10NS5ATMA1"},"content":{"rendered":"

Productos<\/h2>\n

The BSC098N10NS5ATMA1 from Infineon Technologies is an N-Channel OptiMOS 5 power MOSFET rated at 100V, 31A with 9.8mOhm maximum on-resistance. Designed for synchronous rectification and DC-DC converter applications, it features low RDS(on), low gate charge, and SuperJunction technology in a SuperSO-8 package.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Fabricante<\/td>\nInfineon Technologies<\/td>\n<\/tr>\n
Channel Type<\/td>\nN-Channel Enhancement<\/td>\n<\/tr>\n
VDS<\/td>\n100V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n31A @ TC=25C<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n9.8mOhm @ VGS=10V<\/td>\n<\/tr>\n
RDS(on) Typ<\/td>\n8.3mOhm @ VGS=10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0V to 4.0V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n52nC @ VGS=10V<\/td>\n<\/tr>\n
Figure of Merit (FOM)<\/td>\n430mOhm*nC<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n62W @ TC=25C<\/td>\n<\/tr>\n
Paquete<\/td>\nSuperSO-8 (5.3 x 5.2mm)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55C to +175C<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • OptiMOS 5 100V technology<\/li>\n
  • Ultra-low RDS(on): 9.8mOhm max<\/li>\n
  • Low gate charge for high-frequency switching<\/li>\n
  • Excellent Figure of Merit: 430mOhm*nC<\/li>\n
  • SuperJunction technology for low conduction losses<\/li>\n
  • Low output capacitance (Coss)<\/li>\n
  • 100% avalanche tested<\/li>\n
  • Repetitive avalanche rated<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Synchronous rectification in DC-DC converters<\/li>\n
    • Secondary-side rectification in telecom power supplies<\/li>\n
    • Motor drive and load switches<\/li>\n
    • Solar inverter applications<\/li>\n
    • Battery protection and management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The BSC098N10NS5ATMA1 from Infineon Technologies is an N-Channel OptiMOS 5 power MOSFET rated at 100V, 31A with 9.8mOhm maximum on-resistance. Designed for synchronous rectification and DC-DC converter applications, it features low RDS(on), low gate charge, and SuperJunction technology in a SuperSO-8 package. Key Specifications Manufacturer Infineon Technologies Channel Type N-Channel Enhancement VDS 100V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-2495","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-Ch OptiMOS5 100V 31A 9.8mOhm, SuperSO-8, sync rect, DC-DC","date_code":"","package_case":"SuperSO-8 (5.3 x 5.2 x 1.1mm)","in_stock":7820,"datasheet":"https:\/\/www.infineon.com\/cms\/en\/product\/power\/mosfet\/100v-n-channel-power-mosfet\/bsc098n10ns5atma1\/","price":"$1.45 @ 1ku","product_introduction":"The Infineon BSC098N10NS5ATMA1 is a 100V N-Channel power MOSFET from the OptiMOS 5 family, built on SuperJunction technology. It achieves ultra-low on-resistance of 9.8mOhm maximum at VGS=10V, making it ideal for high-efficiency synchronous rectification and DC-DC converter applications. The low total gate charge of 52nC enables high-frequency switching with minimal driving losses. The excellent Figure of Merit (RDS(on) x Qg = 430mOhm*nC) positions this device as a market leader in the 100V class. The SuperSO-8 package provides low parasitic inductance and good thermal performance with a top-side cooling option. The device is 100% avalanche tested and rated for repetitive avalanche conditions.","working_principle":"The BSC098N10NS5ATMA1 operates as a voltage-controlled N-Channel MOSFET using SuperJunction technology: 1) SuperJunction Structure: Unlike conventional planar MOSFETs, the SuperJunction architecture uses alternating P and N columns in the drift region. This allows the drift region to be heavily doped for lower on-resistance while maintaining high breakdown voltage through charge balance between columns. 2) Conduction: At VGS=10V, the channel is fully enhanced, and the RDS(on) of 8.3mOhm typical provides very low conduction loss. At 31A, conduction loss is only 8W typical. 3) Switching: The low gate charge (52nC) enables rapid switching transitions. The gate driver must charge and discharge the input capacitance (Ciss), and the low Qgd (Miller charge) minimizes the switching plateau. 4) Avalanche: The device can safely absorb inductive energy during unclamped switching, with the junction temperature rising briefly but staying within safe limits.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Output<\/td>MOSFET source<\/td><\/tr>
      2<\/td>Source<\/td>Output<\/td>MOSFET source<\/td><\/tr>
      3<\/td>Source<\/td>Output<\/td>MOSFET source<\/td><\/tr>
      4<\/td>Gate<\/td>Input<\/td>MOSFET gate<\/td><\/tr>
      5-8<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to exposed pad)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous rectification in 48V telecom DC-DC converters<\/li>
      • Secondary-side MOSFET in server power supply LLC stages<\/li>
      • Motor drive half-bridge in battery-powered tools<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>BSC080N10NS5GATMA1<\/td>SuperSO-8<\/td>8mOhm, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IPP080N10N3GXKSA1<\/td>TO-220<\/td>8mOhm, through-hole<\/td><\/tr>
        onsemi<\/td>NTMFS5C612NLT1G<\/td>PowerPAK-SO-8<\/td>100V, 6.1mOhm<\/td><\/tr>
        Vishay<\/td>SiRA12DP-T1-GE3<\/td>PowerPAK-SO-8<\/td>100V, 10mOhm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2495","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2495"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2495\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2495"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2495"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2495"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2495"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}