{"id":2167,"date":"2026-05-15T07:14:42","date_gmt":"2026-05-15T07:14:42","guid":{"rendered":"https:\/\/materialparts.com\/mmbt2907a-7-f\/"},"modified":"2026-05-15T07:14:42","modified_gmt":"2026-05-15T07:14:42","slug":"mmbt2907a-7-f","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/mmbt2907a-7-f\/","title":{"rendered":"MMBT2907A-7-F"},"content":{"rendered":"

Productos<\/h2>\n

El MMBT2907A-7-F es un transistor de uni\u00f3n bipolar (BJT) PNP de peque\u00f1a se\u00f1al fabricado por Diodes Incorporated, dise\u00f1ado para aplicaciones de amplificaci\u00f3n y conmutaci\u00f3n de baja potencia. Construido con una matriz plana epitaxial y alojado en un encapsulado compacto de montaje superficial SOT-23-3, ofrece una tensi\u00f3n nominal de colector-emisor de -60 V, una corriente de colector continua de -600 mA y una ganancia m\u00ednima de corriente continua (hFE) de 100 a 150 mA. Con una frecuencia de transici\u00f3n de 200 MHz y una baja tensi\u00f3n de saturaci\u00f3n (VCE(sat) = -0,4 V t\u00edp. a IC = -150 mA), este dispositivo es id\u00f3neo para circuitos amplificadores y excitadores de uso general. Cuenta con la homologaci\u00f3n AEC-Q101 y no contiene plomo, hal\u00f3genos ni antimonio, lo que lo hace adecuado para aplicaciones de automoci\u00f3n y sensibles desde el punto de vista medioambiental. El tipo NPN complementario es el MMBT2222A.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo de transistor<\/td>\nTransistor de uni\u00f3n bipolar PNP (BJT)<\/td>\n<\/tr>\n
Tensi\u00f3n colector-base (VCBO)<\/td>\n-60 V<\/td>\n<\/tr>\n
Tensi\u00f3n colector-emisor (VCEO)<\/td>\n-60 V<\/td>\n<\/tr>\n
Tensi\u00f3n emisor-base (VEBO)<\/td>\n-6.0 V<\/td>\n<\/tr>\n
Corriente continua de colector (IC)<\/td>\n-600 mA<\/td>\n<\/tr>\n
Corriente de pico de colector (ICM)<\/td>\n-800 mA<\/td>\n<\/tr>\n
Corriente de base pico (IBM)<\/td>\n-200 mA<\/td>\n<\/tr>\n
Disipaci\u00f3n de potencia (PD)<\/td>\n310 mW (almohadilla m\u00ednima), 350 mW (almohadilla de 15 mm)<\/td>\n<\/tr>\n
Ganancia de corriente continua (hFE, min)<\/td>\n100 @ IC = -150 mA, VCE = -10 V<\/td>\n<\/tr>\n
Ganancia de corriente continua (hFE, m\u00e1x.)<\/td>\n300 @ IC = -150 mA, VCE = -10 V<\/td>\n<\/tr>\n
hFE (min) a IC = -500 mA<\/td>\n50<\/td>\n<\/tr>\n
VCE(sat) (m\u00e1x) @ IC\/IB = -150\/-15 mA<\/td>\n-0.4 V<\/td>\n<\/tr>\n
VCE(sat) (m\u00e1x) @ IC\/IB = -500\/-50 mA<\/td>\n-1.6 V<\/td>\n<\/tr>\n
VBE(sat) (m\u00e1x) @ IC\/IB = -150\/-15 mA<\/td>\n-1.3 V<\/td>\n<\/tr>\n
VBE(sat) (m\u00e1x) @ IC\/IB = -500\/-50 mA<\/td>\n-2.6 V<\/td>\n<\/tr>\n
Corriente de corte del colector (ICBO, m\u00e1x.)<\/td>\n-10 nA @ VCB = -50 V<\/td>\n<\/tr>\n
Frecuencia de transici\u00f3n (fT)<\/td>\n200 MHz @ VCE = -20 V, IC = -50 mA<\/td>\n<\/tr>\n
Capacitancia de salida (Cobo)<\/td>\n8,0 pF @ VCB = -10 V, f = 1 MHz<\/td>\n<\/tr>\n
Capacitancia de entrada (Cibo)<\/td>\n30 pF @ VEB = -2,0 V, f = 1 MHz<\/td>\n<\/tr>\n
Tiempo de encendido (ton)<\/td>\n45 ns (t\u00edpico)<\/td>\n<\/tr>\n
Tiempo de apagado (toff)<\/td>\n100 ns (t\u00edpico)<\/td>\n<\/tr>\n
Resistencia t\u00e9rmica (RthJA)<\/td>\n403 grados C\/W (almohadilla m\u00ednima)<\/td>\n<\/tr>\n
Temperatura de funcionamiento de la uni\u00f3n<\/td>\n-55 a +150 grados C<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (TO-236-3, SC-59)<\/td>\n<\/tr>\n
Conformidad<\/td>\nAEC-Q101, RoHS, sin hal\u00f3genos, sin antimonio<\/td>\n<\/tr>\n
Clasificaci\u00f3n ESD (HBM)<\/td>\n4000 V (JEDEC Clase 3A)<\/td>\n<\/tr>\n
NPN complementario<\/td>\nMMBT2222A<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Construcci\u00f3n de matriz plana epitaxial para un rendimiento fiable y constante<\/li>\n
  • Tensi\u00f3n de colector-emisor de -60 V y corriente de colector continua de -600 mA<\/li>\n
  • Alta ganancia de corriente continua: hFE min 100 a IC = -150 mA para una fuerte amplificaci\u00f3n de la se\u00f1al<\/li>\n
  • Baja tensi\u00f3n de saturaci\u00f3n colector-emisor: -0,4 V t\u00edp. a IC = -150 mA para una conmutaci\u00f3n eficaz<\/li>\n
  • La frecuencia de transici\u00f3n de 200 MHz admite aplicaciones de amplificaci\u00f3n de frecuencia media<\/li>\n
  • Certificaci\u00f3n AEC-Q101 para requisitos de fiabilidad en automoci\u00f3n<\/li>\n
  • Totalmente sin plomo, sin hal\u00f3genos y sin antimonio (dispositivo ecol\u00f3gico)<\/li>\n
  • Complementario tipo NPN MMBT2222A disponible para configuraciones push-pull y totem-polo<\/li>\n
  • Protecci\u00f3n ESD hasta 4000 V HBM (JEDEC Clase 3A)<\/li>\n
  • MSL Nivel 1 - vida \u00fatil ilimitada del suelo seg\u00fan J-STD-020<\/li>\n
  • Compuesto de moldeo con clasificaci\u00f3n de inflamabilidad UL 94V-0<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Amplificaci\u00f3n de se\u00f1ales de bajo consumo en circuitos de audio y sensores<\/li>\n
    • Conmutaci\u00f3n de uso general y control de carga (rel\u00e9s, LED, motores peque\u00f1os)<\/li>\n
    • Traducci\u00f3n a nivel l\u00f3gico y circuitos de interfaz<\/li>\n
    • Gesti\u00f3n de energ\u00eda y aplicaciones de conmutaci\u00f3n de carga en dispositivos port\u00e1tiles<\/li>\n
    • Etapas de amplificaci\u00f3n Push-pull emparejadas con MMBT2222A (complemento NPN)<\/li>\n
    • M\u00f3dulos de control electr\u00f3nico para autom\u00f3viles (cualificados AEC-Q101)<\/li>\n
    • Acondicionamiento de se\u00f1ales de control e instrumentaci\u00f3n industrial<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The MMBT2907A-7-F is a PNP small-signal bipolar junction transistor (BJT) manufactured by Diodes Incorporated, designed for low-power amplification and switching applications. Built with an epitaxial planar die construction and housed in a compact SOT-23-3 surface-mount package, it offers a collector-emitter voltage rating of -60 V, a continuous collector current of -600 mA, and […]<\/p>\n","protected":false},"author":2,"featured_media":2170,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[53,55],"tags":[],"chip_brand":[163],"class_list":["post-2167","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-discrete-semiconductor-devices","category-transistors","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"PNP BJT, 60V, 600mA, hFE 100 min, 200MHz fT, SOT-23-3, AEC-Q101, low VCE(sat), Green device","date_code":"","package_case":"SOT-23-3 (TO-236-3, SC-59), 2.9 x 1.3 x 1.0 mm","in_stock":6952,"datasheet":"https:\/\/www.diodes.com\/part\/view\/MMBT2907A","price":"$0.038 @ 1ku","product_introduction":"The MMBT2907A-7-F is a PNP small-signal bipolar junction transistor (BJT) manufactured by Diodes Incorporated using an epitaxial planar die construction process. Designed for low-power amplification and general-purpose switching, this device offers a collector-emitter voltage rating of -60 V and a continuous collector current capability of -600 mA, making it versatile enough for a wide range of signal-level and low-power load-driving applications. The transistor achieves a minimum DC current gain (hFE) of 100 at IC = -150 mA, providing strong signal amplification with minimal base drive current. Its low collector-emitter saturation voltage of typically -0.4 V at IC = -150 mA ensures efficient switching with minimal conduction losses, which is critical in battery-powered and portable device applications where power efficiency directly impacts operating lifetime. The device features a transition frequency of 200 MHz, enabling use in medium-frequency amplifier circuits. Encapsulated in a compact SOT-23-3 surface-mount package, the MMBT2907A-7-F is ideally suited for high-density PCB layouts. It is AEC-Q101 qualified, meeting the stringent reliability requirements of automotive electronics, and is fully lead-free, halogen-free, and antimony-free (Green device). The complementary NPN counterpart, MMBT2222A, enables designers to implement balanced push-pull amplifier stages and complementary switching circuits with matched electrical characteristics.","working_principle":"The MMBT2907A-7-F operates as a PNP bipolar junction transistor through three distinct operating regions:\n\n1. Active Region (Amplification): When the base-emitter junction is forward-biased (VBE negative for PNP) and the base-collector junction is reverse-biased, the transistor operates in the active region. A small base current (IB) controls a much larger collector current (IC), with the ratio defined by the DC current gain hFE. At IC = -150 mA and VCE = -10 V, hFE ranges from 100 to 300, providing substantial signal amplification. The epitaxial planar construction ensures consistent gain characteristics across the operating temperature range.\n\n2. Saturation Region (Switching ON): When both the base-emitter and base-collector junctions are forward-biased, the transistor enters saturation. In this state, the collector-emitter voltage drops to VCE(sat), which is typically -0.4 V at IC = -150 mA and IB = -15 mA. The low saturation voltage minimizes power dissipation during the ON state, making the device efficient as a load switch. At higher currents (IC = -500 mA), VCE(sat) increases to a maximum of -1.6 V.\n\n3. Cut-Off Region (Switching OFF): When the base-emitter junction is not sufficiently forward-biased (VEB < |VBE(on)|), the transistor is in cut-off. Collector current reduces to the leakage level (ICBO max = -10 nA at VCB = -50 V), effectively isolating the load from the supply. The Ioff condition ensures minimal standby power consumption, critical for battery-operated circuits.\n\nThe transition frequency (fT) of 200 MHz defines the upper bandwidth limit where current gain drops to unity. In practical amplifier circuits, useful gain is available up to approximately fT \/ hFE, providing adequate bandwidth for audio and medium-frequency signal processing applications.","pin_description":"\n
      Pin No.<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Base (B)<\/td>Input<\/td>Controls the transistor conduction. A negative base current relative to the emitter forward-biases the base-emitter junction, allowing collector current to flow. Must be current-limited via an external base resistor.<\/td><\/tr>\n
      2<\/td>Emitter (E)<\/td>Power<\/td>Current source terminal for PNP operation. In typical circuits, the emitter is connected to the positive supply rail. Current flows from emitter to collector when the base is driven.<\/td><\/tr>\n
      3<\/td>Collector (C)<\/td>Output<\/td>Current sink terminal. In switching applications, the collector is connected to the load. Collector current is controlled by the base current multiplied by hFE. Maximum continuous rating: -600 mA.<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Low-power audio and sensor signal amplification: Provides high gain (hFE 100-300) for amplifying weak signals from microphones, temperature sensors, and photodiodes in portable and battery-operated devices<\/li>\n
      • General-purpose load switching: Drives relays, LEDs, buzzers, and small DC motors with efficient low-saturation switching (VCE(sat) = -0.4 V typ)<\/li>\n
      • Logic-level and voltage translation: Interfaces between different voltage domains in mixed-signal systems, leveraging the -60 V VCEO rating<\/li>\n
      • Complementary push-pull amplifiers: Paired with the MMBT2222A (NPN complement) for Class B\/AB audio output stages and totem-pole driver configurations<\/li>\n
      • Automotive electronics (AEC-Q101): Signal conditioning and load control in body electronics, lighting modules, and sensor interfaces<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Key Notes<\/th><\/tr>\n
        onsemi<\/td>MMBT2907ALT3G<\/td>SOT-23-3<\/td>Pin-to-pin compatible, AEC-Q101 qualified, same electrical specs<\/td><\/tr>\n
        Nexperia<\/td>PMBT2907A,215<\/td>SOT-23-3<\/td>Pin-to-pin compatible from Nexperia, 60 V, -600 mA<\/td><\/tr>\n
        Diodes Incorporated<\/td>MMBT2907AQ-7-F<\/td>SOT-23-3<\/td>Automotive qualified version with full PPAP support<\/td><\/tr>\n
        Nexperia<\/td>BC807-40,235<\/td>SOT-23-3<\/td>PNP general-purpose, 45 V, -500 mA, higher hFE (max 630)<\/td><\/tr>\n
        onsemi<\/td>MMBT2907AWT1G<\/td>SOT-323<\/td>Smaller footprint (SOT-323), same electrical characteristics<\/td><\/tr>\n
        STMicroelectronics<\/td>SMBT2907A<\/td>SOT-23-3<\/td>Pin-to-pin replacement, dual NPN\/PNP pair version available<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2167","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2167"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2167\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/2170"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2167"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2167"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2167"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2167"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}