{"id":2149,"date":"2026-05-14T06:45:19","date_gmt":"2026-05-14T06:45:19","guid":{"rendered":"https:\/\/materialparts.com\/2n7002\/"},"modified":"2026-05-14T06:45:19","modified_gmt":"2026-05-14T06:45:19","slug":"2n7002","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/2n7002\/","title":{"rendered":"2N7002"},"content":{"rendered":"

Productos<\/h2>\n

The 2N7002 is a widely used N-channel enhancement-mode MOSFET in a compact SOT-23-3 package. With a 60V drain-source voltage rating, 115mA continuous drain current, and 7.5\u03a9 on-resistance, it is designed for low-power switching applications. The low gate threshold voltage (~2.1V) allows direct drive from 3.3V and 5V logic, making it one of the most popular general-purpose small-signal MOSFETs for digital control, level shifting, and load switching.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Fabricante<\/td>\nMultiple (onsemi, Infineon, Diodes Inc, NXP, etc.)<\/td>\n<\/tr>\n
FET Type<\/td>\nN-Channel Enhancement Mode<\/td>\n<\/tr>\n
VDS (Drain-Source Voltage)<\/td>\n60V<\/td>\n<\/tr>\n
VGS (Gate-Source Voltage)<\/td>\n\u00b120V<\/td>\n<\/tr>\n
ID (Continuous Drain Current)<\/td>\n115mA @ 25\u00b0C<\/td>\n<\/tr>\n
RDS(on) @ VGS=10V<\/td>\n7.5\u03a9 max<\/td>\n<\/tr>\n
VGS(th) (Gate Threshold)<\/td>\n1.0V to 2.5V<\/td>\n<\/tr>\n
Qg (Total Gate Charge)<\/td>\n50pC typical (onsemi)<\/td>\n<\/tr>\n
Ciss (Input Capacitance)<\/td>\n50pF typical<\/td>\n<\/tr>\n
Power Dissipation<\/td>\n225mW (onsemi) \/ 350mW (varies by mfr)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55\u00b0C to +150\u00b0C<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23-3 (TO-236)<\/td>\n<\/tr>\n
Budgetary Price<\/td>\n$0.027 @ 3ku (onsemi)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • N-channel enhancement mode MOSFET<\/li>\n
  • 60V drain-source voltage rating<\/li>\n
  • Low gate threshold voltage: 1.0V to 2.5V, directly drivable from 3.3V\/5V logic<\/li>\n
  • Low gate charge for fast switching<\/li>\n
  • Integral source-drain body diode<\/li>\n
  • Compact SOT-23-3 surface-mount package<\/li>\n
  • Low cost and wide availability from multiple manufacturers<\/li>\n
  • Logic-level drive compatible<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Low-side load switching<\/li>\n
    • GPIO-controlled power management<\/li>\n
    • Logic-level signal switching and interfacing<\/li>\n
    • LED and relay driving<\/li>\n
    • Battery-operated portable devices<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The 2N7002 is a widely used N-channel enhancement-mode MOSFET in a compact SOT-23-3 package. With a 60V drain-source voltage rating, 115mA continuous drain current, and 7.5\u03a9 on-resistance, it is designed for low-power switching applications. The low gate threshold voltage (~2.1V) allows direct drive from 3.3V and 5V logic, making it one of the […]<\/p>\n","protected":false},"author":2,"featured_media":2172,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,25],"tags":[],"chip_brand":[182],"class_list":["post-2149","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-microcontrollers-mcu","chip_brand-onsemi"],"acf":{"brief_explanation":"N-ch MOSFET, 60V, 115mA, 7.5\u03a9, SOT-23-3, logic-level gate, general-purpose small-signal switch","date_code":"","package_case":"SOT-23-3 (TO-236, SC-59)","in_stock":15000,"datasheet":"https:\/\/www.onsemi.com\/products\/discrete-power-modules\/mosfets\/2n7002lt1","price":"$0.027 @ 3ku","product_introduction":"The 2N7002 is an industry-standard N-channel enhancement-mode MOSFET universally recognized as one of the most widely used small-signal switching transistors. Available from multiple manufacturers including onsemi, Infineon, Diodes Incorporated, NXP, and others, it provides 60V drain-source breakdown voltage, 115mA continuous drain current, and 7.5\u03a9 maximum on-resistance at VGS=10V. The low gate threshold voltage (1.0V to 2.5V) enables direct drive from 3.3V and 5V microcontroller GPIO pins without additional gate drive circuitry. Housed in a compact SOT-23-3 package, the 2N7002 is ideal for low-power switching, level shifting, and load control in virtually every category of electronic design. Its extremely low cost ($0.027 at volume) and broad multi-source availability make it a default choice for general-purpose MOSFET switching.","working_principle":"

      Enhancement-Mode Operation<\/h3>\n

      The 2N7002 is an enhancement-mode MOSFET, meaning it is normally off (non-conducting) when VGS = 0V. When the gate-to-source voltage exceeds the threshold voltage (VGS(th), typically 2.1V), an inversion layer forms in the P-type body region beneath the gate oxide, creating a conductive N-type channel between drain and source. Increasing VGS further enhances the channel, reducing on-resistance (RDS(on)) and increasing drain current capability.<\/p>\n\n

      Switching Behavior<\/h3>\n

      The low gate charge (approximately 50pC) enables fast switching transitions, limited primarily by the gate driver's current capability and the gate resistance. Turn-on time is determined by how quickly the gate capacitance can be charged above VGS(th), while turn-off requires discharging the gate below threshold. The low capacitance (Ciss ~50pF) makes switching efficient even at moderate frequencies.<\/p>\n\n

      Body Diode<\/h3>\n

      Like all vertical MOSFETs, the 2N7002 has an inherent P-N junction (body diode) between source and drain. This diode conducts when VDS is negative (source higher than drain), providing a path for inductive kickback currents in switching applications. The body diode has a typical forward voltage of 0.9V to 1.2V.<\/p>\n\n

      On-Resistance Characteristics<\/h3>\n

      RDS(on) varies significantly with gate drive voltage. At VGS=10V, RDS(on) is specified at 7.5\u03a9 maximum. At VGS=4.5V (typical 3.3V logic high), RDS(on) increases. At VGS=2.5V, it increases further, approaching the threshold region. For reliable low-RDS(on) switching, a gate voltage of 4.5V or higher is recommended.<\/p>","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>S (Source)<\/td>Power<\/td>Source terminal (connected to ground in low-side switch)<\/td><\/tr>\n
      2<\/td>G (Gate)<\/td>Input<\/td>Gate control terminal (voltage-driven input)<\/td><\/tr>\n
      3<\/td>D (Drain)<\/td>Output<\/td>Drain terminal (connected to load)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Low-side load switching for LEDs, relays, and small motors driven from 3.3V or 5V microcontroller GPIO<\/li>\n
      • Logic-level signal interfacing and voltage translation between different logic domains<\/li>\n
      • Battery-operated portable devices requiring compact, low-cost power switches with minimal gate drive<\/li>\n
      • I2C and SPI bus level shifting where bidirectional open-drain communication needs pull-up to different voltages<\/li>\n
      • General-purpose digital control circuits where low cost and multi-source availability are critical<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        Various<\/td>BSS138<\/td>SOT-23-3<\/td>50V, 220mA, lower VGS(th), popular for level shifting<\/td><\/tr>\n
        Various<\/td>BS170<\/td>TO-92<\/td>60V, similar specs, through-hole package<\/td><\/tr>\n
        AO<\/td>AO3400<\/td>SOT-23-3<\/td>30V, 5.8A, much lower RDS(on), higher current<\/td><\/tr>\n
        onsemi<\/td>2N7002K<\/td>SOT-23-3<\/td>ESD-protected gate, improved version<\/td><\/tr>\n
        Infineon<\/td>2N7002 H6327<\/td>SOT-23-3<\/td>60V, 300mA, AEC-Q100 qualified<\/td><\/tr>\n
        Diodes Inc<\/td>2N7002-13-F<\/td>SOT-23-3<\/td>Pin-compatible, cost-effective alternative<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2149","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2149"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2149\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/2172"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2149"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2149"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2149"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2149"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}