{"id":2109,"date":"2026-05-14T03:40:13","date_gmt":"2026-05-14T03:40:13","guid":{"rendered":"https:\/\/materialparts.com\/ao3402\/"},"modified":"2026-05-14T04:02:09","modified_gmt":"2026-05-14T04:02:09","slug":"ao3402","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/ao3402\/","title":{"rendered":"AO3402"},"content":{"rendered":"

Productos<\/h2>\n

The AO3402 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode MOSFET in an SOT-23 package, manufactured using advanced trench technology. It offers 4 A drain current with 52 mΩ max RDS(on) at VGS = 10 V, and supports gate drive voltages as low as 2.5 V (85 mΩ max). With an extremely low gate charge of 10 nC and fast switching speeds (3.5 ns turn-on delay, 1.5 ns rise time), it is ideally suited for high-frequency PWM and load switch applications in portable electronics.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n30 V<\/td>\n<\/tr>\n
ID<\/td>\n4 A @ 25 °C \/ 3.2 A @ 70 °C<\/td>\n<\/tr>\n
RDS(on)<\/td>\n43 mΩ typ \/ 52 mΩ max @ VGS = 10 V<\/td>\n<\/tr>\n
RDS(on) @ 4.5 V<\/td>\n47 mΩ typ \/ 65 mΩ max<\/td>\n<\/tr>\n
RDS(on) @ 2.5 V<\/td>\n60 mΩ typ \/ 85 mΩ max<\/td>\n<\/tr>\n
VGS(th)<\/td>\n0.5 V to 1.5 V<\/td>\n<\/tr>\n
Qg<\/td>\n10 nC typ @ VGS = 10 V \/ 4.7 nC @ 4.5 V<\/td>\n<\/tr>\n
Ciss<\/td>\n235 pF typ<\/td>\n<\/tr>\n
Switching (tD(on)\/tr\/tD(off)\/tf)<\/td>\n3.5 \/ 1.5 \/ 17.5 \/ 2.5 ns typ<\/td>\n<\/tr>\n
Body Diode trr \/ Qrr<\/td>\n8.5 ns \/ 2.6 nC typ<\/td>\n<\/tr>\n
PD<\/td>\n1.4 W @ 25 °C<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 °C to +150 °C<\/td>\n<\/tr>\n
Paquete<\/td>\nSOT-23 (2.9 x 1.6 x 1.25 mm)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Advanced trench technology for low RDS(on) and low gate charge<\/li>\n
  • Supports 2.5 V low-voltage gate drive for 3.3 V \/ 5 V logic direct drive<\/li>\n
  • Ultra-fast switching: 1.5 ns rise time, 3.5 ns turn-on delay<\/li>\n
  • Compact SOT-23 package with 1.4 W power dissipation<\/li>\n
  • Low body diode reverse recovery: trr = 8.5 ns, Qrr = 2.6 nC<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Load switches in portable electronics<\/li>\n
    • PWM applications<\/li>\n
    • Mobile phone \/ tablet power management<\/li>\n
    • Battery protection circuits<\/li>\n
    • DC-DC converters (low power)<\/li>\n
    • Low-power motor drive<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The AO3402 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode MOSFET in an SOT-23 package, manufactured using advanced trench technology. It offers 4 A drain current with 52 mΩ max RDS(on) at VGS = 10 V, and supports gate drive voltages as low as 2.5 V (85 mΩ max). With […]<\/p>\n","protected":false},"author":2,"featured_media":2181,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[174],"class_list":["post-2109","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-aosmd"],"acf":{"brief_explanation":"30V N-channel trench MOSFET, SOT-23, 4A, RDS(on) 52m ohm max @ 10V, Qg 10nC, 2.5V gate drive capable, -55C to +150C.","date_code":"","package_case":"SOT-23 (2.9 x 1.6 x 1.25mm)","in_stock":14066,"datasheet":"https:\/\/www.aosmd.com\/res\/datasheets\/AO3402.pdf","price":"","product_introduction":"The AO3402 from Alpha and Omega Semiconductor is a 30V N-channel enhancement-mode MOSFET in SOT-23 package using advanced trench technology. It offers 4A drain current with 52m ohm max RDS(on) at 10V gate drive, and supports operation down to 2.5V VGS (85m ohm max). Extremely low gate charge of 10nC (at 10V) and fast switching (3.5ns turn-on delay, 1.5ns rise time) make it ideal for high-frequency PWM and load switch applications in portable electronics.","working_principle":"The AO3402 uses AOS advanced trench (vertical) gate MOSFET technology. Trench gate structures eliminate the JFET region present in planar MOSFETs, achieving higher cell density and lower RDS(on). When VGS exceeds the threshold (0.5-1.5V), the P-body inverts to form an N-type conduction channel from drain to source. The trench structure provides a very low specific on-resistance per unit area. Low gate charge (10nC @10V) minimizes drive power loss and switching time. The body diode formed by P-body and N-drift provides a freewheeling path with trr=8.5ns and Qrr=2.6nC.","pin_description":"
      Pin<\/th>SOT-23<\/th>Function<\/th>Description<\/th><\/tr>
      1<\/td>Gate<\/td>Gate<\/td>Control; VGS(th) 0.5~1.5V; +\/-12V max<\/td><\/tr>
      2<\/td>Source<\/td>Source<\/td>Reference; 4A rated @ 25C<\/td><\/tr>
      3<\/td>Drain<\/td>Drain<\/td>Power terminal; 30V breakdown<\/td><\/tr><\/table>","application_scenarios":"
      • Load switches in portable electronics<\/li>
      • PWM applications<\/li>
      • Mobile phone \/ tablet power management<\/li>
      • Battery protection circuits<\/li>
      • DC-DC converters (low power)<\/li>
      • Low-power motor drive<\/li><\/ul>","alternative_models":"
        Model<\/th>Type<\/th>Notes<\/th><\/tr>
        AO3402A<\/td>Same family<\/td>AOS improved version; mark A29T<\/td><\/tr>
        AO3400<\/td>Functional equiv.<\/td>AOS 30V\/5.8A\/28m ohm; higher current<\/td><\/tr>
        SI2302<\/td>Functional equiv.<\/td>Vishay 20V\/2.2A; SOT-23<\/td><\/tr>
        2N7002<\/td>Functional equiv.<\/td>60V\/0.3A; lower current; SOT-23<\/td><\/tr>
        BSS138<\/td>Functional equiv.<\/td>50V\/0.22A; low VGS(th); SOT-23<\/td><\/tr>
        AO3404<\/td>Functional equiv.<\/td>AOS 30V\/5.8A\/25m ohm; higher current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2109","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2109"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2109\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/2181"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2109"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2109"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2109"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2109"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}