{"id":2104,"date":"2026-05-14T03:40:03","date_gmt":"2026-05-14T03:40:03","guid":{"rendered":"https:\/\/materialparts.com\/fqp47p06\/"},"modified":"2026-05-14T04:02:01","modified_gmt":"2026-05-14T04:02:01","slug":"fqp47p06","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/fqp47p06\/","title":{"rendered":"FQP47P06"},"content":{"rendered":"

Productos<\/h2>\n

El FQP47P06 es un MOSFET de potencia en modo de mejora de canal P de -60 V de onsemi (anteriormente Fairchild), que utiliza la tecnolog\u00eda DMOS de banda plana QFET. En un encapsulado TO-220 con orificio pasante, proporciona una corriente de drenaje continua de -47 A con una RDS(on) m\u00e1xima de 26 m\u03a9 a VGS = -10 V. El dispositivo se ha sometido a pruebas de avalancha 100% con una energ\u00eda de avalancha de pulso \u00fanico de 820 mJ, lo que lo hace id\u00f3neo para aplicaciones de conmutaci\u00f3n de lado alto, SMPS y amplificadores de audio.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n-60 V<\/td>\n<\/tr>\n
ID (continuo)<\/td>\n-47 A @ TC = 25 \u00b0C \/ -21,2 A @ TC = 100 \u00b0C<\/td>\n<\/tr>\n
RDS(on)<\/td>\n21 m\u03a9 t\u00edp \/ 26 m\u03a9 m\u00e1x @ VGS = -10 V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-2,0 V a -4,0 V<\/td>\n<\/tr>\n
Qg<\/td>\n84 nC t\u00edp. \/ 110 nC m\u00e1x.<\/td>\n<\/tr>\n
Ciss<\/td>\n2800 pF t\u00edpico \/ 3600 pF m\u00e1x.<\/td>\n<\/tr>\n
PD<\/td>\n160 W @ TC = 25 \u00b0C<\/td>\n<\/tr>\n
Energ\u00eda de avalancha (EAS)<\/td>\n820 mJ (impulso \u00fanico)<\/td>\n<\/tr>\n
Cuerpo Diodo VSD<\/td>\n-4,0 V m\u00e1x. @ -30 A<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-55 \u00b0C a +175 \u00b0C<\/td>\n<\/tr>\n
Paquete<\/td>\nTO-220 (10,67 x 4,7 x 9,4 mm, agujero pasante)<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n
    \n
  • Tecnolog\u00eda QFET DMOS de banda plana para un bajo RDS(on) y un excelente rendimiento de conmutaci\u00f3n<\/li>\n
  • El 100% ha sido sometido a pruebas de avalancha que garantizan su robustez en aplicaciones de carga inductiva<\/li>\n
  • La baja carga de puerta (84 nC) y el bajo Crss (320 pF) optimizan la eficiencia de conmutaci\u00f3n<\/li>\n
  • El canal P elimina el requisito de bomba de carga para aplicaciones de interruptor de lado alto<\/li>\n
  • Potencia disipada de 160 W en encapsulado TO-220 est\u00e1ndar<\/li>\n<\/ul>\n

    Aplicaciones<\/h2>\n
      \n
    • Conmutaci\u00f3n de lado alto SMPS<\/li>\n
    • Etapa de salida del amplificador de audio<\/li>\n
    • Accionamiento del puente en H del motor de CC (lado del canal P)<\/li>\n
    • Protecci\u00f3n contra polaridad inversa de la bater\u00eda<\/li>\n
    • Correcci\u00f3n del factor de potencia (PFC)<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FQP47P06 is a -60 V P-channel enhancement-mode power MOSFET from onsemi (formerly Fairchild), utilizing the QFET planar stripe DMOS technology. In a through-hole TO-220 package, it provides -47 A continuous drain current with a maximum RDS(on) of 26 mΩ at VGS = -10 V. The device is 100% avalanche tested with 820 […]<\/p>\n","protected":false},"author":2,"featured_media":2244,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[144],"class_list":["post-2104","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-on"],"acf":{"brief_explanation":"-60V P-channel QFET power MOSFET, TO-220, -47A, RDS(on) 26m ohm max @ -10V, 160W, 820mJ EAS, 84nC Qg, -55C to +175C.","date_code":"","package_case":"TO-220 (10.67 x 4.7 x 9.4mm, Through-Hole)","in_stock":14149,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/fqpf47p06-d.pdf","price":"$1.40 @ 1 unit","product_introduction":"The FQP47P06 is a -60V P-channel enhancement-mode power MOSFET from onsemi (formerly Fairchild) using QFET planar stripe DMOS technology. It delivers -47A continuous drain current and 26m ohm max RDS(on) in a TO-220 package. With 160W power dissipation, 84nC gate charge, and 820mJ single-pulse avalanche energy, it is optimized for high-side switching, SMPS, audio amplifiers, and DC motor control. 100% avalanche tested.","working_principle":"The P-channel MOSFET conducts when a negative VGS below the threshold (-2 to -4V) creates an inversion layer of holes connecting source to drain. Because hole mobility is lower than electron mobility, P-channel devices have 2-3x higher RDS(on) than comparable N-channel, but eliminate the need for charge-pump gate drive in high-side switch applications where the source connects to VDD. QFET planar stripe DMOS technology optimizes cell structure to minimize RDS(on) and Crss, improving switching FOM.","pin_description":"
      Pin<\/th>TO-220<\/th>Function<\/th>Description<\/th><\/tr>
      1<\/td>Gate<\/td>Gate<\/td>Control; VGS(th) -2~-4V; +\/-25V max<\/td><\/tr>
      2<\/td>Drain<\/td>Drain<\/td>Power terminal; -60V; connect to load<\/td><\/tr>
      3<\/td>Source<\/td>Source<\/td>Reference; connect to VDD (high-side); -47A<\/td><\/tr>
      Tab<\/td>Drain<\/td>Heatsink<\/td>Electrically connected to Pin 2<\/td><\/tr><\/table>","application_scenarios":"
      • SMPS high-side switching<\/li>
      • Audio amplifier output stage<\/li>
      • DC motor H-bridge (P-ch side)<\/li>
      • Battery reverse-polarity protection<\/li>
      • Power factor correction (PFC)<\/li><\/ul>","alternative_models":"
        Model<\/th>Type<\/th>Notes<\/th><\/tr>
        FQPF47P06<\/td>PIN-compatible<\/td>TO-220F Fullpack insulated; no insulator needed<\/td><\/tr>
        IRF4905<\/td>Functional equiv.<\/td>Infineon -55V\/-74A; TO-220; lower V higher I<\/td><\/tr>
        IRFR5305PBF<\/td>Functional equiv.<\/td>Infineon -55V\/-31A; DPAK SMD<\/td><\/tr>
        NDP6020P<\/td>Functional equiv.<\/td>onsemi -20V\/-24A; ultra-low RDS(on); low-V<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2104","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=2104"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/2104\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media\/2244"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=2104"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=2104"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=2104"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=2104"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}