El DMN2009LSS de Diodes Incorporated es un MOSFET de potencia en modo de mejora de canal N de 20 V en un encapsulado SO-8 de 8 patillas. Las especificaciones clave incluyen 20 V de tensi\u00f3n de drenaje-fuente, 12 A de corriente de drenaje continua, 8 m\u03a9 de RDS(on) m\u00e1ximo a VGS = 10 V, 9 m\u03a9 a VGS = 4,5 V, rango de tensi\u00f3n umbral de 0,5-1,2 V, 16 nC de carga de puerta t\u00edpica a 4,5 V y 2 W de disipaci\u00f3n de potencia. El dispositivo utiliza tecnolog\u00eda MOSFET de zanja para una resistencia de encendido ultrabaja. El rango de temperatura de funcionamiento es de -55\u00b0C a +150\u00b0C (TJ). El sufijo LSS indica encapsulado SO-8.<\/p>","protected":false},"excerpt":{"rendered":"
The DMN2009LSS from Diodes Incorporated is a 20 V N-channel enhancement-mode power MOSFET in an 8-pin SO-8 package. Key specifications include 20 V drain-source voltage, 12 A continuous drain current, 8 m\u03a9 maximum RDS(on) at VGS = 10 V, 9 m\u03a9 at VGS = 4.5 V, 0.5-1.2 V threshold voltage range, 16 nC typical gate […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[163],"class_list":["post-2065","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"20V N-ch MOSFET, 12A, 8m\u03a9@10V, 9m\u03a9@4.5V, SO-8, 2W, DC-DC\/load switch","date_code":"","package_case":"SO-8 (5.0 x 4.0 x 1.5 mm, 1.27mm pitch, gull-wing)","in_stock":1889,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/DMN2009LSS.pdf","price":"$0.24 (10K+ pcs)","product_introduction":"The DMN2009LSS from Diodes Incorporated is a single N-channel enhancement-mode power MOSFET in the industry-standard SO-8 package. With 20 V drain-source rating and 12 A continuous current capability, it targets high-current, low-voltage power management applications including DC-DC converters, load switches, and motor drives.\n\nThe ultra-low 8 m\u03a9 maximum RDS(on) at VGS = 10 V (9 m\u03a9 at 4.5 V, 12 m\u03a9 at 2.5 V) is achieved through Diodes' trench MOSFET technology. At 10 A load, the conduction loss is only 0.8 W (8 m\u03a9 \u00d7 10\u00b2A), well within the 2 W package rating with adequate PCB copper area.\n\nThe 0.5 V minimum threshold voltage ensures the device can be driven from logic-level signals, while the 1.2 V maximum threshold guarantees full enhancement at 2.5 V gate drive. This wide threshold range means the device works well at both 2.5 V and 5 V gate drive, though RDS(on) is significantly lower at 4.5 V and above.\n\nThe SO-8 package provides a good balance between current handling and PCB area. The 2 W power dissipation rating assumes adequate thermal design \u2014 typically a 1 square-inch copper pour on the drain pins with thermal vias to internal ground planes.\n\nThe DMN2009LSS is part of Diodes' DMN20xx family of 20 V N-channel MOSFETs. Related devices include the DMN2009USS (same die in a different SO-8 variant) and DMN2016UTS (dual N-channel version). The -13 suffix variant denotes tape-and-reel packaging.\n\nFor applications requiring automotive qualification, Diodes offers AEC-Q101 qualified variants (identified by 'Q' suffix).","working_principle":"**N-Channel Trench MOSFET:** The DMN2009LSS uses trench gate technology where vertical trenches are etched into the silicon and the gate electrode is formed inside these trenches. This creates a very large channel width per unit die area, resulting in the ultra-low 8 m\u03a9 RDS(on). The vertical current flow from source (top) to drain (bottom) through the trench structure provides efficient current handling.\n\n**Gate Drive Considerations:** The 0.5-1.2 V threshold range means the device can be driven from logic levels. At VGS = 4.5 V, RDS(on) is 9 m\u03a9 maximum \u2014 only slightly higher than at 10 V. This logic-level optimization makes the device suitable for direct MCU GPIO drive in load-switch applications. At VGS = 2.5 V, RDS(on) increases to 12 m\u03a9, still very low for most applications.\n\n**SO-8 Package Thermal Design:** The SO-8 package dissipates heat primarily through the drain leads (pins 5-8 for single MOSFET configuration) into the PCB copper. The 2 W rating at 25\u00b0C ambient requires approximately 1 square inch of 1 oz copper on the drain pads. For higher dissipation, thermal vias connecting to internal copper planes improve thermal performance.\n\n**Body Diode:** The inherent body diode from source to drain has a forward voltage of approximately 0.9 V at 1 A. In synchronous rectifier applications, this diode conducts during the dead time between high-side and low-side switch transitions.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; typically connected to ground for low-side switching; 12A continuous current path; body diode anode<\/td><\/tr> | ||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pin 1); both source pins must connect together on PCB; reduces parasitic inductance<\/td><\/tr> | ||||||||||||||||||||||
| 3<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 2); three source pins reduce package resistance and inductance<\/td><\/tr> | ||||||||||||||||||||||
| 4<\/td> | Gate<\/td> | I<\/td> | Gate input; VGS(th) 0.5-1.2V; VGS max \u00b112V; 16nC gate charge@4.5V; drive with low-impedance driver for fast switching; series gate resistor controls slew rate<\/td><\/tr> | ||||||||||||||||||||||
| 5<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 20V max VDS; 12A continuous; 8m\u03a9 RDS(on)@10V; connect to load or inductor; primary thermal path to PCB<\/td><\/tr> | ||||||||||||||||||||||
| 6<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pin 5); solder to copper pour with thermal vias for heat dissipation<\/td><\/tr> | ||||||||||||||||||||||
| 7<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6); three drain pins reduce resistance and provide thermal path<\/td><\/tr> | ||||||||||||||||||||||
| 8<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5-7); all four drain pins must connect together on PCB<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|