The DMN62D0LFB-7 from Diodes Incorporated is a 60 V N-channel enhancement-mode small-signal MOSFET in a 3-pin X1-DFN1006-3 package (1.0 x 0.6 x 0.47 mm). Key specifications include 60 V drain-source voltage, 320 mA continuous drain current, 1.3 \u03a9 maximum RDS(on) at VGS = 4 V, 1.0 V maximum threshold voltage, 0.45 nC typical gate charge at 4.5 V, 32 pF typical input capacitance, and 500 mW power dissipation. The device features ESD-protected gate and halogen-free construction. Operating temperature range is -55\u00b0C to +150\u00b0C (TJ). The -7 suffix denotes 3000-unit tape-and-reel.<\/p>","protected":false},"excerpt":{"rendered":"
The DMN62D0LFB-7 from Diodes Incorporated is a 60 V N-channel enhancement-mode small-signal MOSFET in a 3-pin X1-DFN1006-3 package (1.0 x 0.6 x 0.47 mm). Key specifications include 60 V drain-source voltage, 320 mA continuous drain current, 1.3 \u03a9 maximum RDS(on) at VGS = 4 V, 1.0 V maximum threshold voltage, 0.45 nC typical gate charge […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[163],"class_list":["post-2064","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"60V N-ch MOSFET, 320mA, 1.3\u03a9@4V, ESD-protected gate, X1-DFN1006 (0.6mm\u00b2), 0.45nC Qg","date_code":"","package_case":"X1-DFN1006-3 (1.0 x 0.6 x 0.47 mm, 0.5mm pitch, bottom terminals)","in_stock":17922,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/DMN62D0LFB.pdf","price":"$0.07 (3K+ pcs)","product_introduction":"The DMN62D0LFB-7 from Diodes Incorporated is a 60 V N-channel enhancement-mode MOSFET in the ultra-miniature X1-DFN1006-3 package, occupying only 0.6 mm\u00b2 of board area with a 0.47 mm profile. This is one of the smallest MOSFET packages available, taking less than half the board space of SOT-723 and approximately one-third the space of SOT-23.\n\nThe 60 V drain-source voltage rating provides ample margin for 12 V, 24 V, and 48 V industrial and telecom applications. The 1.3 \u03a9 maximum RDS(on) at VGS = 4 V is adequate for small-signal switching, load switching, and level translation where current does not exceed 320 mA. At VGS = 2.5 V, RDS(on) increases to 2.5 \u03a9 maximum, still usable for lower-current 2.5 V logic-driven switches.\n\nThe ESD-protected gate eliminates the need for external gate protection, a practical benefit in high-volume consumer electronics manufacturing. The 0.45 nC typical gate charge enables fast switching with minimal drive power.\n\nThe X1-DFN1006-3 package uses bottom-side terminals (no leads), requiring controlled-accuracy PCB assembly. The package is MSL-1 rated (unlimited floor life), simplifying storage and handling. With R\u03b8JA of 258\u00b0C\/W, the package limits continuous power dissipation to approximately 500 mW at 25\u00b0C ambient.\n\nThe DMN62D0LFB is part of Diodes' next-generation MOSFET portfolio targeting space-constrained applications in smartphones, tablets, wearables, and IoT devices. The 60 V rating distinguishes it from typical small-signal MOSFETs (20-30 V), enabling use in higher-voltage industrial and telecom circuits.","working_principle":"**N-Channel Enhancement MOSFET:** The DMN62D0LFB is an N-channel enhancement-mode MOSFET. With VGS below the threshold (VGS(th) = 0.6-1.0 V), no channel forms and the device is off. When VGS exceeds VGS(th), an inversion layer forms under the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(on)) decreases with increasing VGS.\n\n**Trench MOSFET Structure:** The device uses trench gate technology where the gate electrode is formed in vertical trenches etched into the silicon. This maximizes channel width per unit area, achieving low RDS(on) in a small die. The 0.45 nC gate charge reflects the small gate area, enabling fast switching.\n\n**ESD-Protected Gate:** Internal ESD protection structures (Zener clamp or back-to-back diodes) are integrated between gate and source. These structures shunt ESD energy away from the thin gate oxide during handling and assembly, allowing the device to survive ESD events without external protection components.\n\n**DFN1006 Package Thermal Considerations:** The bottom-only terminals provide a low-inductance connection to the PCB, but the small die and lack of a thermal tab result in R\u03b8JA of 258\u00b0C\/W. Thermal management relies on PCB copper pours under the drain terminal. For higher power applications, consider the larger X1-DFN1212-3 variant (DMN62D0LFD-7) with better thermal performance.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; typically connected to ground for low-side switching; 320mA per channel; body diode cathode<\/td><\/tr> | ||||||||||||||||||||||||
| 2<\/td> | Gate<\/td> | I<\/td> | Gate input; ESD-protected; VGS(th) 0.6-1.0V; VGS max \u00b120V; 0.45nC gate charge; drive from MCU GPIO<\/td><\/tr> | ||||||||||||||||||||||||
| 3<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 60V max; 320mA continuous; 1.3\u03a9 RDS(on)@4V; connect to load; bottom-side terminal; solder to copper pad<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|