El 6A10 es un diodo rectificador de silicio de uso general con una corriente media hacia delante de 6 A y una tensi\u00f3n inversa pico repetitiva de 1000 V, alojado en un encapsulado R-6 (P-600) de paso axial. Especificaciones principales: tensi\u00f3n inversa pico repetitiva m\u00e1xima (VRRM) de 1000 V; tensi\u00f3n RMS m\u00e1xima de 700 V; tensi\u00f3n de bloqueo de CC m\u00e1xima de 1000 V; corriente rectificada media m\u00e1xima hacia delante de 6,0 A a TA=50-60 grados C; corriente de pico hacia delante de 200-400 A (media onda senoidal simple de 8,3 ms); ca\u00edda de tensi\u00f3n instant\u00e1nea m\u00e1xima hacia delante de 0,9-1,0 V a 6,0 A; corriente inversa m\u00e1xima de CC de 5-10 uA a 25 grados C, 0,3-1.0 mA a 100-150 grados C; capacitancia de uni\u00f3n t\u00edpica 150 pF a 1 MHz y 4 V inversos; tiempo de recuperaci\u00f3n inversa t\u00edpico 2,5 us; rango de temperaturas de funcionamiento de uni\u00f3n y almacenamiento -55 a +150 grados C (o -50 a +150 grados C seg\u00fan el fabricante); resistencia t\u00e9rmica t\u00edpica de uni\u00f3n a ambiente 20 grados C\/W (PCB montada con pastillas de cobre de 30\u00d730 mm); clasificaci\u00f3n de inflamabilidad UL 94V-0; peso aproximado 2,1 gramos. Forma parte de las series 6A05 a 6A10, que cubren las tensiones de 50 V a 1000 V. Ampliamente utilizado por fabricantes como Good-Ark (Suzhou Solid State), Diodes Inc, Rectron y muchos otros. Estado del producto activo.<\/p>","protected":false},"excerpt":{"rendered":"
The 6A10 is a general-purpose silicon rectifier diode rated at 6 A average forward current and 1000 V repetitive peak reverse voltage, housed in an R-6 (P-600) axial lead through-hole package. Key specifications: maximum repetitive peak reverse voltage (VRRM) 1000 V; maximum RMS voltage 700 V; maximum DC blocking voltage 1000 V; maximum average forward […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[14,13],"tags":[],"chip_brand":[142],"class_list":["post-1966","post","type-post","status-publish","format-standard","hentry","category-clock-timing-ics","category-integrated-circuits-ics","chip_brand-st"],"acf":{"brief_explanation":"6A 1000V silicon rectifier diode, 0.9V Vf, 200A surge, R-6 axial, -55~150C, general purpose","date_code":"","package_case":"R-6 \/ P-600 (9.1 x 9.1 mm body, axial lead, 25.4mm min lead length)","in_stock":200000,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/ds16008.pdf","price":"$0.05 (1K+ pcs)","product_introduction":"The 6A10 is a general-purpose silicon rectifier diode rated at 6 amperes average forward current and 1000 volts repetitive peak reverse voltage. It belongs to the widely used 6A-series (6A05 through 6A10) that covers voltage grades from 50 V to 1000 V, making it one of the most popular rectifier diode families in the electronics industry.\n\nThe 6A10 is the highest voltage member of the 6A-series, with a VRRM of 1000 V. This makes it suitable for off-line power supply applications where the rectified AC mains voltage can exceed 700 V peak (e.g., 240 VAC input). The 700 V RMS voltage rating covers the full range of worldwide AC mains voltages.\n\nThe 6 A average forward current rating is sufficient for power supplies up to approximately 500 W (at 240 VAC input) in a full-bridge rectifier configuration. For higher power applications, the 6A10 can be used in parallel (with current-sharing considerations) or replaced by higher-current rectifier modules.\n\nThe forward voltage drop of 0.9-1.0 V at 6 A is typical for a standard recovery silicon rectifier. While this is higher than Schottky diodes (0.3-0.5 V), the 6A10 can block 1000 V whereas Schottky diodes are typically limited to 100-200 V. For high-voltage rectification, the 6A10 offers the best balance of voltage rating, current capacity, and cost.\n\nThe 200-400 A peak surge current rating provides excellent robustness against inrush currents, transient overloads, and capacitor charging surges. This is particularly important in power supply applications where large filter capacitors draw high inrush current at power-on.\n\nThe R-6 (also called P-600) package is an industry-standard axial lead through-hole package for 6 A rectifier diodes. It features a molded plastic body with a cathode band denoting polarity. The package is UL 94V-0 flammability rated and uses void-free molded plastic construction for reliability.\n\nThe 6A10 is a commodity part, produced by dozens of manufacturers worldwide with fully compatible specifications. Major manufacturers include Good-Ark Electronics (Suzhou Solid State), Diodes Incorporated, Rectron, ON Semiconductor, STMicroelectronics, and many others. While the basic specifications are standardized, the exact forward voltage drop, reverse leakage current, and surge current ratings can vary slightly between manufacturers.\n\nThe 2.5 us typical reverse recovery time classifies the 6A10 as a standard recovery rectifier, not a fast recovery type. It is suitable for 50\/60 Hz line rectification but not for high-frequency switching applications (above 1 kHz). For switching power supply applications at higher frequencies, consider fast recovery diodes such as FR107 (1000 V, 1 A, 500 ns trr) or UF4007 (1000 V, 1 A, 75 ns trr).","working_principle":"The 6A10 operates as a PN junction silicon rectifier diode, allowing current to flow in only one direction (anode to cathode) and blocking current in the reverse direction.\n\nPN Junction Formation: The 6A10 is fabricated using a P-type silicon wafer with an N-type diffusion region (or vice versa), forming a PN junction. The junction is passivated with a glass or oxide layer for surface stability and reliability. The void-free molded plastic package provides mechanical protection and electrical insulation.\n\nForward Bias Operation: When a positive voltage is applied to the anode relative to the cathode (forward bias), the PN junction conducts current. The forward voltage drop is approximately 0.7-1.0 V for a silicon PN junction, depending on the current level and junction temperature. At the rated 6 A forward current, the 6A10 exhibits a maximum forward voltage drop of 0.9-1.0 V (manufacturer dependent). The forward voltage has a negative temperature coefficient, decreasing by approximately -2 mV\/degree C as the junction temperature rises.\n\nReverse Bias Operation: When a negative voltage is applied to the anode relative to the cathode (reverse bias), the PN junction blocks current flow. The reverse leakage current is very small at room temperature (5-10 uA at rated voltage) but increases exponentially with temperature. At 100-150 degrees C, the reverse leakage can reach 0.3-1.0 mA. This temperature-dependent leakage is a normal characteristic of silicon PN junctions and is accounted for in thermal design.\n\nReverse Recovery: When the diode switches from forward conduction to reverse blocking, stored charge in the junction must be removed before the diode can block reverse voltage. This creates a brief reverse recovery current that flows in the reverse direction before the diode turns off. The reverse recovery time (trr) of the 6A10 is approximately 2.5 us (typical), measured with IF=0.5 A, IR=1.0 A, Irr=0.25 A. This relatively slow recovery limits the 6A10 to line-frequency (50\/60 Hz) applications.\n\nSurge Current Capability: The 6A10 can withstand peak non-repetitive surge currents of 200-400 A for one 8.3 ms half-sine pulse (JEDEC method). This capability is determined by the thermal mass of the silicon die and the bonding wires. Repeated surge events can cause thermal fatigue and eventual failure, so the surge rating applies to rare events (e.g., power-on inrush, fault clearing).\n\nThermal Considerations: Power dissipation in the 6A10 is primarily due to the forward voltage drop (P = VF x IF). At 6 A with 1.0 V forward drop, the dissipation is 6 W. This heat must be conducted away from the junction through the lead frame to the PCB or heat sink. The thermal resistance from junction to ambient is approximately 20 degrees C\/W (PCB mounted with 30x30 mm copper pads), meaning 6 W of dissipation raises the junction temperature approximately 120 degrees C above ambient. At 25 degrees C ambient, the junction would reach 145 degrees C, which is near the 150 degrees C maximum. This is why the 6 A current rating requires a 50-60 degrees C ambient with adequate PCB copper area.\n\nVoltage Rating Selection: The 6A10 (1000 V) is selected when the peak reverse voltage in the application does not exceed 1000 V. For a 240 VAC input full-bridge rectifier, the peak reverse voltage across each diode is 340 V (240 x 1.414), so the 1000 V rating provides a comfortable safety margin. For 120 VAC input, the peak reverse voltage is only 170 V, and a 6A4 (400 V) or 6A6 (600 V) variant could be used with the same forward current characteristics.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 (Anode)<\/td> | Anode<\/td> | Input<\/td> | Positive terminal of the diode; current enters the diode through this terminal when forward biased; connect to the positive side of the AC source in rectifier applications; the end of the diode body opposite the cathode band; axial lead is solderable per MIL-STD-750 method 2026; 0.047-0.052 inch (1.2-1.3 mm) diameter; minimum 1.0 inch (25.4 mm) lead length from body edge<\/td><\/tr> | ||||||||||||||||||||||||||||||||||||
| 2 (Cathode)<\/td> | Cathode<\/td> | Output<\/td> | Negative terminal of the diode; current exits the diode through this terminal when forward biased; identified by the colored band (cathode band) on the diode body; connect to the positive output in rectifier applications; in reverse bias, this terminal receives the positive voltage that the diode blocks; axial lead specifications same as anode<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|