The BSS123-7-F is an N-channel enhancement mode trench MOSFET from Diodes Incorporated featuring 100 V drain-source voltage, 170 mA continuous drain current, 6 \u03a9 RDS(on) at VGS = 10 V, and VGS(th) of 2.0 V max. With 60 pF input capacitance, 300 mW power dissipation, and AEC-Q101 qualification, it is ideal for low-side load switching, logic level shifting, and general-purpose digital control. Packaged in SOT-23-3 (2.9 x 1.3 mm) with MSL-1 rating and Pb-free compliance, it operates over -55\u00b0C to +150\u00b0C junction temperature. Supplied in tape and reel (3000 units\/reel).<\/p>","protected":false},"excerpt":{"rendered":"
The BSS123-7-F is an N-channel enhancement mode trench MOSFET from Diodes Incorporated featuring 100 V drain-source voltage, 170 mA continuous drain current, 6 \u03a9 RDS(on) at VGS = 10 V, and VGS(th) of 2.0 V max. With 60 pF input capacitance, 300 mW power dissipation, and AEC-Q101 qualification, it is ideal for low-side load switching, […]<\/p>\n","protected":false},"author":2,"featured_media":1888,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[163],"class_list":["post-1807","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"N-channel enhancement MOSFET, 100V, 170 mA, 6 \u03a9 RDS(on), SOT-23-3, AEC-Q101","date_code":"","package_case":"SOT-23-3 (2.9 x 1.3 mm)","in_stock":207116,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/BSS123.pdf","price":"$0.055 (1000+ pcs)","product_introduction":"The BSS123-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, utilizing proprietary high-density trench technology. It features a drain-source breakdown voltage (VDSS) of 100 V, continuous drain current (ID) of 170 mA at 25\u00b0C ambient, and on-resistance (RDS(on)) of 6 \u03a9 maximum at VGS = 10 V and ID = 170 mA. The gate-source threshold voltage (VGS(th)) is 2.0 V maximum at ID = 1 mA.\r\n\r\nKey electrical characteristics include a maximum gate-source voltage of \u00b120 V, input capacitance (Ciss) of 60 pF maximum at VDS = 25 V, and power dissipation of 300 mW at 25\u00b0C ambient. The device operates over a junction temperature range of -55\u00b0C to +150\u00b0C.\r\n\r\nThe BSS123-7-F is packaged in the industry-standard SOT-23-3 (TO-236-3, SC-59) package with dimensions of 2.9 x 1.3 x 1.0 mm. It features a matte tin finish annealed over alloy 42 lead frame, UL94V-0 flame-rated molded plastic case, and is MSL-1 rated (unlimited floor life). The -7 suffix denotes tape and reel packaging (3000 units per reel), and the -F suffix indicates green (Pb-free) compliance. The device is also AEC-Q101 qualified for automotive applications.\r\n\r\nThe low gate threshold voltage, low input capacitance, and fast switching speed make this MOSFET ideal for low-voltage and low-current switching applications such as level shifting, load switching, and general-purpose digital control.","working_principle":"The BSS123-7-F is an N-channel enhancement mode MOSFET that operates by modulating the conductivity of a channel between source and drain using an electric field applied to the gate terminal.\r\n\r\nEnhancement Mode Operation: With no gate-source voltage applied (VGS = 0 V), the MOSFET is in the off state. There is no conductive channel between drain and source, and only a tiny leakage current (IDSS) flows. This is the normally-off characteristic of enhancement mode devices.\r\n\r\nChannel Formation: When a positive gate-source voltage exceeding the threshold voltage (VGS(th)) is applied, the electric field attracts electrons to the semiconductor surface beneath the gate oxide, forming an inversion layer (conducting channel) between source and drain. For the BSS123-7-F, VGS(th) is typically around 1.0-1.4 V, with a maximum of 2.0 V at ID = 1 mA.\r\n\r\nOhmic (Linear) Region: At low VDS, the drain current is approximately proportional to VDS, and the channel behaves like a resistor with value RDS(on). The RDS(on) is 6 \u03a9 maximum at VGS = 10 V. Higher VGS increases the channel charge density, reducing RDS(on) and increasing drain current capability.\r\n\r\nSaturation Region: At higher VDS, the channel pinches off near the drain end, and the drain current becomes relatively independent of VDS, limited by the gate voltage. The device acts as a current source in this region.\r\n\r\nSwitching Behavior: The MOSFET is voltage-driven and requires virtually no steady-state gate current (only the gate leakage current, typically less than 100 nA). The switching speed is determined by the time required to charge and discharge the input capacitance (Ciss = 60 pF max) through the gate driver impedance. The low Ciss enables fast turn-on and turn-off transitions, making the device suitable for high-frequency switching applications.\r\n\r\nTrench Technology: The BSS123-7-F uses trench MOSFET technology, where the gate structure is formed vertically in a trench etched into the silicon. This approach reduces cell size and increases channel density per unit area, achieving lower RDS(on) for a given die size compared to planar MOSFET construction.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Default Function<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Gate<\/td> | I<\/td> | Gate Control Input<\/td> | Voltage-controlled input; drives channel formation between drain and source; high impedance DC input<\/td><\/tr> | ||||||||||||||||||||||||||||||||||||
| 2<\/td> | Source<\/td> | G<\/td> | Source Terminal<\/td> | Current source terminal; typically connected to ground in low-side switch configuration<\/td><\/tr> | ||||||||||||||||||||||||||||||||||||
| 3<\/td> | Drain<\/td> | O<\/td> | Drain Terminal<\/td> | Current drain terminal; connects to load in switching applications<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|