{"id":10239,"date":"2026-07-09T08:33:08","date_gmt":"2026-07-09T08:33:08","guid":{"rendered":"https:\/\/materialparts.com\/is42s16160j-7tli\/"},"modified":"2026-07-09T08:35:09","modified_gmt":"2026-07-09T08:35:09","slug":"is42s16160j-7tli","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/is42s16160j-7tli\/","title":{"rendered":"IS42S16160J-7TLI"},"content":{"rendered":"<h2>Productos<\/h2>\n<p>The IS42S16160J-7TLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n<h2>Especificaciones<\/h2>\n<table>\n<tr>\n<td>Tipo de memoria<\/td>\n<td>SDR SDRAM<\/td>\n<\/tr>\n<tr>\n<td>Densidad<\/td>\n<td>256Mbit (32MB)<\/td>\n<\/tr>\n<tr>\n<td>Organization<\/td>\n<td>16M x 16<\/td>\n<\/tr>\n<tr>\n<td>Internal Banks<\/td>\n<td>4<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>LVTTL (Parallel)<\/td>\n<\/tr>\n<tr>\n<td>Max Clock Frequency<\/td>\n<td>143 MHz (-7 speed grade)<\/td>\n<\/tr>\n<tr>\n<td>Access Time<\/td>\n<td>5.4 ns<\/td>\n<\/tr>\n<tr>\n<td>Row Addressing<\/td>\n<td>A0-A12 (8192 rows)<\/td>\n<\/tr>\n<tr>\n<td>Column Addressing<\/td>\n<td>A0-A8 (512 columns)<\/td>\n<\/tr>\n<tr>\n<td>Tensi\u00f3n de alimentaci\u00f3n<\/td>\n<td>3.0V to 3.6V (3.3V Typ)<\/td>\n<\/tr>\n<tr>\n<td>Programmable CAS Latency<\/td>\n<td>2, 3 clocks<\/td>\n<\/tr>\n<tr>\n<td>Programmable Burst Length<\/td>\n<td>1, 2, 4, 8, Full Page<\/td>\n<\/tr>\n<tr>\n<td>Burst Sequence<\/td>\n<td>Sequential \/ Interleave<\/td>\n<\/tr>\n<tr>\n<td>Refresh<\/td>\n<td>8K cycles \/ 64ms (Com\/Ind\/A1)<\/td>\n<\/tr>\n<tr>\n<td>Temperatura de funcionamiento<\/td>\n<td>-40 C to +85 C (Industrial)<\/td>\n<\/tr>\n<tr>\n<td>Paquete<\/td>\n<td>54-TSOP-II (10.16mm width)<\/td>\n<\/tr>\n<tr>\n<td>Estado de las piezas<\/td>\n<td>Production<\/td>\n<\/tr>\n<\/table>\n<h2>Caracter\u00edsticas<\/h2>\n<p>256Mbit SDR SDRAM organized as 16M x 16; 143MHz\/166MHz maximum clock frequency; 4 internal banks for concurrent operation; Single 3.3V +\/- 0.3V power supply; LVTTL-compatible inputs and outputs; Programmable CAS latency (2, 3 clocks); Programmable burst length (1, 2, 4, 8, full page); Programmable burst sequence (sequential\/interleave); Auto precharge function; Auto refresh (CBR); Self refresh mode; All signals referenced to positive clock edge; 54-TSOP-II and 54-BGA package options<\/p>\n<h2>Aplicaciones<\/h2>\n<p>Embedded systems main memory; Industrial control and automation; Networking equipment buffer memory; Consumer electronics; Set-top boxes and digital TVs; Data logging systems; Video frame buffering; Communication equipment<\/p>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IS42S16160J-7TLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Memory Type SDR SDRAM Density 256Mbit (32MB) Organization 16M x 16 Internal Banks 4 Interface LVTTL (Parallel) Max Clock Frequency 143 MHz (-7 speed grade) Access [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[37,13,4],"tags":[1493],"chip_brand":[210],"class_list":["post-10239","post","type-post","status-publish","format-standard","hentry","category-dynamic-random-access-memory-dram","category-integrated-circuits-ics","category-memory-chips","tag-is42s16160j-7tli","chip_brand-issi"],"acf":{"brief_explanation":"256Mbit SDR SDRAM, 16Mx16, 143MHz, 3.3V, LVTTL, 54-TSOP-II, Industrial","date_code":"","package_case":"54-TSOP-II (22.22 x 10.16 x 1.0 mm)","in_stock":11162,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/42-45S83200J-16160J.pdf","price":"$4.50 @ 1ku","product_introduction":"The IS42S16160J-7TLI from ISSI is a 256Mbit SDR SDRAM organized as 16M x 16 bits, providing 32MB of synchronous DRAM in a 54-TSOP-II package. The device operates at a maximum clock frequency of 143MHz with 5.4ns access time, suitable for mid-range embedded and industrial memory applications. The quad-bank architecture enables concurrent operation by allowing one bank to be precharged while another is being accessed, hiding precharge latency for sustained throughput. Each of the four 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. The device supports programmable CAS latency of 2 or 3 clocks and programmable burst lengths including 1, 2, 4, 8, and full page modes. The -7TLI designation indicates the 143MHz speed grade (7ns tCK), industrial temperature range (-40C to +85C), TSOP-II package with matte tin (Sn) leads, and industrial grade qualification. This device is also available in a 54-ball TF-BGA (8x13mm) package for space-constrained applications.","working_principle":"The IS42S16160J-7TLI operates as a synchronous dynamic RAM where all input signals are registered on the positive edge of the system clock (CLK). The memory array consists of four independent banks, each containing 4M words of 16 bits. Access begins with an ACTIVE command that latches the bank select (BA0-BA1) and row address (A0-A12) to activate a specific row in the selected bank. A subsequent READ or WRITE command provides the column address (A0-A8) with A10 controlling auto precharge. Data is transferred in burst mode starting at the selected column, continuing for the programmed burst length (1, 2, 4, 8, or full page) in either sequential or interleave order. The auto precharge feature initiates row precharge at the end of the burst, reducing the need for explicit PRECHARGE commands. The DQML and DQMH signals provide byte-level data masking during write operations and output enable\/disable control during reads. Periodic refresh is required with 8192 cycles every 64ms, performed automatically via auto refresh (CBR) or maintained during low-power states via self refresh mode.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>A0-A12<\/td><td>Address Inputs<\/td><td>Input<\/td><td>Multiplexed address; row (A0-A12) during ACTIVE, column (A0-A8) during READ\/WRITE<\/td><\/tr><tr><td>BA0, BA1<\/td><td>Bank Select<\/td><td>Input<\/td><td>Selects one of 4 internal banks<\/td><\/tr><tr><td>DQ0-DQ15<\/td><td>Data I\/O<\/td><td>I\/O<\/td><td>16-bit bidirectional data bus<\/td><\/tr><tr><td>CLK<\/td><td>System Clock<\/td><td>Input<\/td><td>Master clock; all inputs sampled on rising edge<\/td><\/tr><tr><td>CKE<\/td><td>Clock Enable<\/td><td>Input<\/td><td>Enables\/disables CLK; controls power-down and self refresh entry<\/td><\/tr><tr><td>CS#<\/td><td>Chip Select<\/td><td>Input<\/td><td>Active-low chip select<\/td><\/tr><tr><td>RAS#<\/td><td>Command Input<\/td><td>Input<\/td><td>Row address strobe (command encoding with CAS#, WE#)<\/td><\/tr><tr><td>CAS#<\/td><td>Command Input<\/td><td>Input<\/td><td>Column address strobe (command encoding with RAS#, WE#)<\/td><\/tr><tr><td>WE#<\/td><td>Write Enable<\/td><td>Input<\/td><td>Write enable (command encoding with RAS#, CAS#)<\/td><\/tr><tr><td>DQML<\/td><td>Lower Byte Mask<\/td><td>Input<\/td><td>Masks DQ0-DQ7 during writes; enables\/disables lower byte outputs<\/td><\/tr><tr><td>DQMH<\/td><td>Upper Byte Mask<\/td><td>Input<\/td><td>Masks DQ8-DQ15 during writes; enables\/disables upper byte outputs<\/td><\/tr><\/table>","application_scenarios":"<ul><li><strong>Embedded System Main Memory:<\/strong> Provides 32MB of SDR SDRAM for microcontrollers, FPGAs, and SoCs in industrial applications requiring moderate bandwidth at 143MHz.<\/li><li><strong>Industrial Control:<\/strong> Serves as working memory for PLCs and industrial automation controllers with reliable 3.3V SDR SDRAM interface.<\/li><li><strong>Networking Buffer:<\/strong> Packet buffering in network equipment with quad-bank interleaving for sustained throughput during burst transfers.<\/li><li><strong>Video Frame Buffer:<\/strong> Stores video frame data in display and imaging systems with 16-bit data bus for efficient pixel access.<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Density<\/th><th>Notes<\/th><\/tr><tr><td>ISSI<\/td><td>IS42S16160J-7BLI<\/td><td>54-TFBGA<\/td><td>256Mbit<\/td><td>BGA package variant (8x13mm)<\/td><\/tr><tr><td>ISSI<\/td><td>IS42S16160J-6TLI<\/td><td>54-TSOP-II<\/td><td>256Mbit<\/td><td>166MHz speed grade<\/td><\/tr><tr><td>Alliance Memory<\/td><td>AS4C16M16SA-7TCN<\/td><td>54-TSOP-II<\/td><td>256Mbit<\/td><td>Pin-compatible alternative<\/td><\/tr><tr><td>Winbond<\/td><td>W9816G6KH-6<\/td><td>54-TSOP-II<\/td><td>256Mbit<\/td><td>Industry-standard alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10239","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=10239"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10239\/revisions"}],"predecessor-version":[{"id":10249,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10239\/revisions\/10249"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=10239"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=10239"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=10239"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10239"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}