{"id":10238,"date":"2026-07-09T08:33:06","date_gmt":"2026-07-09T08:33:06","guid":{"rendered":"https:\/\/materialparts.com\/is43tr16256bl-125kbli\/"},"modified":"2026-07-09T08:35:08","modified_gmt":"2026-07-09T08:35:08","slug":"is43tr16256bl-125kbli","status":"publish","type":"post","link":"https:\/\/materialparts.com\/es\/is43tr16256bl-125kbli\/","title":{"rendered":"IS43TR16256BL-125KBLI"},"content":{"rendered":"

Productos<\/h2>\n

The IS43TR16256BL-125KBLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n

Especificaciones<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Tipo de memoria<\/td>\nDDR3L SDRAM<\/td>\n<\/tr>\n
Densidad<\/td>\n4Gbit (512MB)<\/td>\n<\/tr>\n
Organization<\/td>\n256M x 16<\/td>\n<\/tr>\n
Internal Banks<\/td>\n8<\/td>\n<\/tr>\n
Interface<\/td>\nSSTL-15 (Parallel)<\/td>\n<\/tr>\n
Grado de velocidad<\/td>\nDDR3-1600K (CL=11, tRCD=11, tRP=11)<\/td>\n<\/tr>\n
Velocidad de datos<\/td>\n1600 MT\/s<\/td>\n<\/tr>\n
Max Clock Frequency<\/td>\n800 MHz (DDR)<\/td>\n<\/tr>\n
Supply Voltage VDD<\/td>\n1.35V (Low Voltage, backward compatible to 1.5V)<\/td>\n<\/tr>\n
Supply Voltage VDDQ<\/td>\n1.35V (backward compatible to 1.5V)<\/td>\n<\/tr>\n
Operating Current<\/td>\n276 mA (Max)<\/td>\n<\/tr>\n
Refresh Interval<\/td>\n7.8us (8192 cycles\/64ms) at -40C to 85C<\/td>\n<\/tr>\n
Prefetch Architecture<\/td>\n8n-bit<\/td>\n<\/tr>\n
Programmable CAS Latency<\/td>\n5, 6, 7, 8, 9, 10, 11<\/td>\n<\/tr>\n
Programmable Burst Length<\/td>\n4, 8 (with on-the-fly switching)<\/td>\n<\/tr>\n
Temperatura de funcionamiento<\/td>\n-40 C to +95 C (Industrial)<\/td>\n<\/tr>\n
Paquete<\/td>\n96-TWBGA (9.0 x 13.0 mm)<\/td>\n<\/tr>\n
Ball Pitch<\/td>\n0.8 mm<\/td>\n<\/tr>\n<\/table>\n

Caracter\u00edsticas<\/h2>\n

4Gbit DDR3L SDRAM organized as 256M x 16; DDR3-1600 speed grade (CL11); 1.35V low voltage operation, backward compatible to 1.5V; 8 internal banks for concurrent operation; 8n-bit prefetch architecture; Programmable CAS latency (5-11); On-the-fly burst length switching (4\/8); Auto self refresh (ASR) with temperature sensor; Self refresh temperature (SRT) compensation; Partial array self refresh; Dynamic ODT (On-Die Termination); OCD (Off-Chip Driver Impedance Adjustment); Write leveling for DDR3 fly-by topology; ZQ calibration; Asynchronous RESET pin; 96-ball BGA (9x13mm) package<\/p>\n

Aplicaciones<\/h2>\n

Automotive infotainment and ADAS; Industrial embedded computing; Telecom and networking equipment; Server and datacenter; FPGA memory interface; Video processing and display; Data logging and buffering; High-performance embedded systems<\/p>","protected":false},"excerpt":{"rendered":"

Product Overview The IS43TR16256BL-125KBLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Memory Type DDR3L SDRAM Density 4Gbit (512MB) Organization 256M x 16 Internal Banks 8 Interface SSTL-15 (Parallel) Speed Grade DDR3-1600K (CL=11, tRCD=11, tRP=11) Data Rate 1600 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[37,13,4],"tags":[1492],"chip_brand":[210],"class_list":["post-10238","post","type-post","status-publish","format-standard","hentry","category-dynamic-random-access-memory-dram","category-integrated-circuits-ics","category-memory-chips","tag-is43tr16256bl-125kbli","chip_brand-issi"],"acf":{"brief_explanation":"4Gbit DDR3L SDRAM, 256Mx16, 1600MT\/s, CL11, 1.35V\/1.5V, 96-BGA, Industrial, AEC-Q100","date_code":"","package_case":"96-TWBGA (9.0 x 13.0 x 1.2 mm)","in_stock":7118,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/43-46TR16256B-85120BL.pdf","price":"$8.80 @ 1ku","product_introduction":"The IS43TR16256BL-125KBLI from ISSI is a 4Gbit DDR3L SDRAM organized as 256M x 16 bits, operating at DDR3-1600 speed grade with CL11-11-11 timing. The device supports 1.35V low-voltage operation (DDR3L) while maintaining backward compatibility with standard 1.5V DDR3 voltage. The 8n-bit prefetch architecture and 8-bank design enable high-bandwidth data transfer at 1600 MT\/s (800MHz DDR clock). The BL suffix indicates the 1.35V DDR3L variant in 96-ball BGA (9x13mm) package, while the I suffix denotes industrial temperature grade (-40C to +95C). The device incorporates advanced DDR3 features including dynamic ODT for signal integrity, write leveling for fly-by topology board designs, auto self refresh (ASR) with temperature-compensated refresh rate, and ZQ calibration for output driver and ODT impedance accuracy. The 256K speed bin specifies DDR3-1600 with CL=11, tRCD=11, tRP=11 timing parameters.","working_principle":"The IS43TR16256BL-125KBLI operates as a double-data-rate synchronous dynamic RAM where data is transferred on both rising and falling edges of the clock signal, achieving twice the data rate per clock cycle. The 8n-bit prefetch architecture reads 8n bits from the DRAM array per access, where n is the configurable burst length (4 or 8), enabling the high external data rate while keeping the internal array access rate manageable. The DDR3 interface uses SSTL-15 signaling with differential data strobes (DQS\/DQS#) for source-synchronous data capture. The fly-by clock\/command\/address topology (unique to DDR3) requires write leveling, a training sequence where the controller adjusts the DQS timing relative to the clock to compensate for propagation delay differences across the signal group. Dynamic ODT allows the termination value to change between write and read operations without a dedicated mode register set command. Auto self refresh (ASR) uses an internal temperature sensor to adjust the refresh interval automatically: 7.8us at normal temperatures, doubling every 10-20C above 85C to maintain data integrity at elevated temperatures. ZQ calibration uses an external 240-ohm reference resistor to calibrate the output driver and ODT impedance for signal integrity.","pin_description":"
Pin Group<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
A0-A14<\/td>Address Inputs<\/td>Input<\/td>Multiplexed row\/column address; row during ACTIVATE, column during READ\/WRITE<\/td><\/tr>
BA0-BA2<\/td>Bank Select<\/td>Input<\/td>Selects one of 8 internal banks<\/td><\/tr>
DQ0-DQ15<\/td>Data I\/O<\/td>I\/O<\/td>16-bit bidirectional data bus<\/td><\/tr>
DQS0\/DQS0#, DQS1\/DQS1#<\/td>Data Strobe<\/td>I\/O<\/td>Differential data strobe for source-synchronous data capture<\/td><\/tr>
DM0, DM1<\/td>Data Mask<\/td>Input<\/td>Data mask for write operations; masks corresponding byte lane<\/td><\/tr>
CK, CK#<\/td>Differential Clock<\/td>Input<\/td>Differential system clock; commands sampled on rising edge<\/td><\/tr>
CKE<\/td>Clock Enable<\/td>Input<\/td>Enables\/disables clock; controls power-down and self refresh<\/td><\/tr>
CS#<\/td>Chip Select<\/td>Input<\/td>Active-low chip select<\/td><\/tr>
ODT<\/td>On-Die Termination<\/td>Input<\/td>Enables\/disables internal termination resistance on DQ\/DQS pins<\/td><\/tr>
RESET#<\/td>Asynchronous Reset<\/td>Input<\/td>Active-low asynchronous reset; clears internal state<\/td><\/tr>
ZQ<\/td>Calibration Reference<\/td>Reference<\/td>Connects to external 240-ohm resistor for impedance calibration<\/td><\/tr><\/table>","application_scenarios":"
  • Automotive Infotainment:<\/strong> Provides 512MB of DDR3L memory for infotainment ECUs with 1.35V low power operation and industrial temperature range.<\/li>
  • Industrial Embedded Computing:<\/strong> Serves as main memory for FPGA and SoC-based industrial controllers with DDR3-1600 bandwidth for real-time data processing.<\/li>
  • Telecom\/Networking:<\/strong> Packet buffering and data plane memory in switches and routers with 1600 MT\/s throughput and dynamic ODT for signal integrity.<\/li>
  • Video Processing:<\/strong> Frame buffer memory for video processing and display systems with high bandwidth and write leveling for multi-DIMM configurations.<\/li><\/ul>","alternative_models":"
    Manufacturer<\/th>Part Number<\/th>Package<\/th>Density<\/th>Notes<\/th><\/tr>
    ISSI<\/td>IS43TR16256B-125KBL<\/td>96-BGA<\/td>4Gbit<\/td>1.5V only variant (no L)<\/td><\/tr>
    ISSI<\/td>IS46TR16256BL-125KBLI<\/td>96-BGA<\/td>4Gbit<\/td>Automotive grade (A1-A3 temp)<\/td><\/tr>
    Micron<\/td>MT41K256M16TW-107<\/td>96-BGA<\/td>4Gbit<\/td>Pin-compatible DDR3L alternative<\/td><\/tr>
    ISSI<\/td>IS43TR16256BL-107MBLI<\/td>96-BGA<\/td>4Gbit<\/td>Same density, DDR3-1866 speed grade<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10238","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/comments?post=10238"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10238\/revisions"}],"predecessor-version":[{"id":10248,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/posts\/10238\/revisions\/10248"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/media?parent=10238"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/categories?post=10238"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/tags?post=10238"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/es\/wp-json\/wp\/v2\/chip_brand?post=10238"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}