{"id":9379,"date":"2026-07-03T06:18:04","date_gmt":"2026-07-03T06:18:04","guid":{"rendered":"https:\/\/materialparts.com\/is42s32200l-6tl\/"},"modified":"2026-07-03T07:37:43","modified_gmt":"2026-07-03T07:37:43","slug":"is42s32200l-6tl","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/is42s32200l-6tl\/","title":{"rendered":"IS42S32200L-6TL"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IS42S32200L-6TL is a 64Mbit (2M x 32-bit x 4 banks) Synchronous DRAM (SDRAM) from ISSI (Integrated Silicon Solution Inc.), operating at 166MHz with CAS Latency 3. This device uses a 3.3V single power supply with an LVTTL interface and is packaged in an 86-pin TSOP-II. The -6 speed grade provides 166MHz clock frequency with 5.4ns access time, suitable for networking, computing, and embedded memory applications.<\/p>\n

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Memory Size<\/td>\n64Mbit (8MB)<\/td>\n<\/tr>\n
Organization<\/td>\n2M x 32-bit x 4 Banks<\/td>\n<\/tr>\n
Technology<\/td>\nSDR SDRAM<\/td>\n<\/tr>\n
Clock Frequency<\/td>\n166 MHz<\/td>\n<\/tr>\n
CAS Latency<\/td>\n2 or 3<\/td>\n<\/tr>\n
Access Time<\/td>\n5.4 ns (CL=3)<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n3.3V (3.0V to 3.6V)<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nLVTTL<\/td>\n<\/tr>\n
Refresh<\/td>\n4096 cycles \/ 64ms<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n86-pin TSOP-II (10.16mm width)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n0C to +70C (Commercial)<\/td>\n<\/tr>\n
\u062d\u0627\u0644\u0629 \u0627\u0644\u062c\u0632\u0621<\/td>\nObsolete<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Single Data Rate SDRAM with 166MHz clock<\/li>\n
  • Wide 32-bit data bus for high throughput (667 MB\/s peak)<\/li>\n
  • Programmable CAS Latency (2 or 3)<\/li>\n
  • Programmable burst length (1, 2, 4, 8, full page)<\/li>\n
  • 4 internal banks for interleaved access<\/li>\n
  • Auto refresh and self refresh modes<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Networking equipment buffer memory<\/li>\n
    • Embedded system main memory<\/li>\n
    • Industrial control frame buffers<\/li>\n
    • Printer and imaging memory<\/li>\n
    • Consumer electronics working RAM<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IS42S32200L-6TL is a 64Mbit (2M x 32-bit x 4 banks) Synchronous DRAM (SDRAM) from ISSI (Integrated Silicon Solution Inc.), operating at 166MHz with CAS Latency 3. This device uses a 3.3V single power supply with an LVTTL interface and is packaged in an 86-pin TSOP-II. The -6 speed grade provides 166MHz clock […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[64,13],"tags":[525],"chip_brand":[210],"class_list":["post-9379","post","type-post","status-publish","format-standard","hentry","category-ferrite-beads","category-integrated-circuits-ics","tag-is42s32200l-6tl","chip_brand-issi"],"acf":{"brief_explanation":"64Mbit SDR SDRAM, 2Mx32, 166MHz, 3.3V, LVTTL, 86-pin TSOP-II, commercial, obsolete","date_code":"","package_case":"86-pin TSOP-II (22.42 x 10.29 x 1.05 mm)","in_stock":16781,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/42-45S32200L.pdf","price":"$3.50 @ surplus","product_introduction":"The IS42S32200L-6TL is a 64Mbit SDR SDRAM from ISSI organized as 2M x 32-bit with 4 internal banks. Operating at 166MHz (CL3) on a 3.3V supply with an LVTTL interface, it delivers up to 667 MB\/s peak bandwidth through its 32-bit wide data bus. The 86-pin TSOP-II package is compatible with many legacy embedded and networking designs. This device is now obsolete but was widely used in networking equipment, printers, and industrial systems requiring wide-bus SDRAM memory.","working_principle":"The IS42S32200L-6TL operates as a synchronous DRAM where all operations are referenced to the rising edge of the CLK signal. Read and write accesses are burst-oriented starting at a selected location. An ACTIVE command selects the bank and row, followed by a READ or WRITE command selecting the starting column. The 4 internal banks allow interleaved access: one bank can be precharged while another is being accessed, hiding the precharge latency and providing seamless high-speed operation. Auto Precharge mode initiates a self-timed row precharge at the end of the burst. The Mode Register sets CAS Latency (2 or 3), burst length (1\/2\/4\/8\/full page), and burst type (sequential\/interleaved). Self Refresh mode retains data with minimal power consumption by internally generating refresh cycles. Auto Refresh requires 4096 cycles every 64ms.","pin_description":"\n
      Pin Group<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      Address<\/td>A0-A10, BA0, BA1<\/td>Input<\/td>Row\/column address and bank select<\/td><\/tr>\n
      Data<\/td>DQ0-DQ31<\/td>Bidirectional<\/td>32-bit data bus<\/td><\/tr>\n
      Data Mask<\/td>DQM0-DQM3<\/td>Input<\/td>Byte-wise data mask (4 bytes)<\/td><\/tr>\n
      Control<\/td>CS, RAS, CAS, WE, CKE<\/td>Input<\/td>Chip select, command inputs, clock enable<\/td><\/tr>\n
      Clock<\/td>CLK<\/td>Input<\/td>System clock (rising edge triggered)<\/td><\/tr>\n
      Power<\/td>VDD\/VDDQ, VSS\/VSSQ<\/td>Power\/Ground<\/td>3.3V supply and ground<\/td><\/tr>\n<\/table>","application_scenarios":"\n
      Application<\/th>Circuit Role<\/th>Key Requirement<\/th><\/tr>\n
      Networking Buffer<\/td>Packet buffer memory<\/td>2Mx32, 166MHz, 667 MB\/s<\/td><\/tr>\n
      Embedded System<\/td>Working RAM for MCU\/MPU<\/td>64Mbit, 3.3V, LVTTL<\/td><\/tr>\n
      Video Frame Buffer<\/td>Display line buffer<\/td>32-bit wide, 166MHz, burst<\/td><\/tr>\n
      Printer Memory<\/td>Page buffer<\/td>2Mx32, auto refresh, 86-TSOP<\/td><\/tr>\n
      Industrial Control<\/td>Data acquisition buffer<\/td>3.3V, 166MHz, self refresh<\/td><\/tr>\n<\/table>","alternative_models":"\n
      Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>\n
      IS42S32200L-5TL<\/td>ISSI<\/td>Faster speed grade (200MHz)<\/td><\/tr>\n
      IS42S32200L-6BL<\/td>ISSI<\/td>90-ball BGA package instead of TSOP<\/td><\/tr>\n
      IS42S16160J-6TL<\/td>ISSI<\/td>16-bit wide variant (1Mx16x4)<\/td><\/tr>\n
      W9812G6JH-6<\/td>Winbond<\/td>Equivalent 64Mbit SDRAM (2Mx4x4B)<\/td><\/tr>\n
      MT48LC8M32B2-6A<\/td>Micron<\/td>Equivalent 64Mbit SDRAM (2Mx32)<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/9379","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=9379"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/9379\/revisions"}],"predecessor-version":[{"id":9408,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/9379\/revisions\/9408"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=9379"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=9379"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=9379"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=9379"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}