The FDD8876 is an onsemi N-channel power MOSFET with 30V VDS, 30A drain current, 6.5mOhm max RDS(on) at 10V, and 35W power dissipation. Packaged in DPAK (TO-252-3) with exposed tab, -55C to +175C.<\/p>\n
| VDS<\/td>\n | 30 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| RDS(on) max<\/td>\n | 6.5 mOhm @ 10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n | 30 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u0633 \u062c<\/td>\n | 35 nC typ<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Vgs(th)<\/td>\n | 1.0V to 2.0V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Pd<\/td>\n | 35 W (Tc)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n | DPAK (TO-252-3)<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The FDD8876 is an onsemi N-channel power MOSFET with 30V VDS, 30A drain current, 6.5mOhm max RDS(on) at 10V, and 35W power dissipation. Packaged in DPAK (TO-252-3) with exposed tab, -55C to +175C. Key Specifications VDS 30 V RDS(on) max 6.5 mOhm @ 10V ID 30 A Qg 35 nC typ Vgs(th) 1.0V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[638],"chip_brand":[144],"class_list":["post-9009","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-fdd8876","chip_brand-on"],"acf":{"brief_explanation":"-30V P-ch MOSFET, 19mOhm, -12A, DPAK-3","date_code":"","package_case":"DPAK \/ TO-252-3 (6.5 x 5.5 x 2.3 mm)","in_stock":9577,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdd8876-d.pdf","price":"$0.52 @ 1ku","product_introduction":"The FDD8876 is an onsemi P-channel enhancement-mode power MOSFET in a DPAK (TO-252-3) surface-mount package. The device features a -30V drain-source voltage rating with extremely low 19 mOhm typical on-resistance at VGS=-10V and -12A continuous drain current. The low RDS(on) enables high-efficiency switching in battery-powered and low-voltage power management applications where conduction losses must be minimized. The DPAK package provides excellent thermal dissipation through the exposed drain tab, with a junction-to-case thermal resistance of 2.0 C\/W. The device features low gate charge (42 nC typical at VGS=-10V) for efficient high-frequency switching. The P-channel architecture simplifies high-side switching designs by eliminating the need for bootstrap gate drive circuits required by N-channel MOSFETs.","working_principle":"The FDD8876 operates as a voltage-controlled P-channel MOSFET. Applying a negative gate-source voltage (VGS) below the threshold (typically -1.0V) creates an inversion layer in the N-body region, forming a conduction channel between source and drain. In high-side switch applications, the source connects to the positive supply rail and the drain to the load; pulling the gate to ground (VGS = -VIN) fully enhances the MOSFET. The trench-gate cell structure maximizes channel density per unit area, achieving the low 19 mOhm on-resistance. The body diode between source and drain provides a natural free-wheeling path for inductive loads. During turn-off, the gate charge (42 nC) must be removed through the gate driver, determining the turn-off time and associated switching losses.","pin_description":"
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