{"id":8597,"date":"2026-06-29T06:56:21","date_gmt":"2026-06-29T06:56:21","guid":{"rendered":"https:\/\/materialparts.com\/irfp4668pbf\/"},"modified":"2026-06-29T06:56:21","modified_gmt":"2026-06-29T06:56:21","slug":"irfp4668pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irfp4668pbf\/","title":{"rendered":"IRFP4668PBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The Infineon IRFP4668PBF is an N-channel power MOSFET utilizing advanced HEXFET technology, rated at 200 V with an extremely low on-resistance of 5.5 mOhm and a continuous drain current of 174 A. Packaged in a TO-247AC package, it is designed for high-efficiency switching applications including DC-DC converters, motor drives, and UPS systems.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n
VDS<\/td>\n200 V<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n5.5 mOhm @ VGS=10V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n174 A @ TC=25\u00b0C<\/td>\n<\/tr>\n
Qg (\u0625\u062c\u0645\u0627\u0644\u064a \u0634\u062d\u0646\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n210 nC<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-247AC<\/td>\n<\/tr>\n
Dissipation<\/td>\n520 W @ TC=25\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Ultra-low RDS(on) of 5.5 mOhm for minimal conduction losses<\/li>\n
  • High current capability of 174 A<\/td>\n<\/tr>\n
  • 200 V drain-to-source voltage rating<\/li>\n
  • Low gate charge for efficient switching<\/li>\n
  • Lead-free (PbF) RoHS-compliant package<\/li>\n
  • Avalanche rated for rugged operation<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • DC-DC converters and voltage regulators<\/li>\n
    • Motor drive and inverter systems<\/li>\n
    • Uninterruptible power supplies (UPS)<\/li>\n
    • Solar inverter power stages<\/li>\n
    • Battery management and charging systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The Infineon IRFP4668PBF is an N-channel power MOSFET utilizing advanced HEXFET technology, rated at 200 V with an extremely low on-resistance of 5.5 mOhm and a continuous drain current of 174 A. Packaged in a TO-247AC package, it is designed for high-efficiency switching applications including DC-DC converters, motor drives, and UPS systems. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-8597","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-Channel MOSFET, 200V, 5.5mOhm, 174A, TO-247AC, HEXFET, ultra-low RDS(on)","date_code":"","package_case":"TO-247AC (3-lead)","in_stock":4280,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfp4668pbf.pdf?fileId=5546d462533600a40153560c4e3c1d9b","price":"$3.85 @ 1ku","product_introduction":"The IRFP4668PBF from Infineon (formerly International Rectifier) is a 200 V N-channel power MOSFET built on advanced HEXFET technology. It features an ultra-low typical on-resistance of 5.5 mOhm, enabling very high efficiency in power conversion applications. With a continuous drain current rating of 174 A and a power dissipation capability of 520 W, this device is optimized for high-current switching in DC-DC converters, motor drives, and UPS systems. The TO-247AC package provides excellent thermal performance with low junction-to-case thermal resistance, making it suitable for demanding thermal environments.","working_principle":"As an enhancement-mode N-channel MOSFET, the IRFP4668PBF operates by applying a positive gate-to-source voltage (typically 10V for full enhancement) to create an inversion layer in the P-type body region, forming a conductive channel between drain and source. The ultra-low RDS(on) of 5.5 mOhm is achieved through advanced cell density optimization and strip layout technology, which minimizes the specific on-resistance per unit area. During switching transitions, the gate charge (Qg = 210 nC) must be supplied or removed through the gate driver circuit. The body-drain diode provides a natural freewheeling path for inductive loads, with avalanche capability for voltage transient protection.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate control terminal<\/td><\/tr>\n
      2<\/td>Drain<\/td>Output<\/td>Drain terminal (connected to tab)<\/td><\/tr>\n
      3<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Primary or secondary side switch in DC-DC converters<\/li>\n
      • Three-phase motor drive inverter power stage<\/li>\n
      • UPS H-bridge switching element<\/li>\n
      • Solar micro-inverter boost converter<\/li>\n
      • Battery protection and load switching<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>VDS<\/th>RDS(on)<\/th>Notes<\/th><\/tr>\n
        Infineon<\/td>IRFP4768PBF<\/td>150V<\/td>3.0 mOhm<\/td>Lower voltage, lower RDS(on)<\/td><\/tr>\n
        ST<\/td>STW88NF200<\/td>200V<\/td>6.5 mOhm<\/td>Similar spec alternative<\/td><\/tr>\n
        onsemi<\/td>NTMFS5C612N<\/td>60V<\/td>1.2 mOhm<\/td>Lower voltage alternative<\/td><\/tr>\n
        Vishay<\/td>IRFP4468PBF<\/td>100V<\/td>2.6 mOhm<\/td>Lower voltage class<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8597","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8597"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8597\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8597"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8597"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8597"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8597"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}