{"id":8566,"date":"2026-06-29T05:20:54","date_gmt":"2026-06-29T05:20:54","guid":{"rendered":"https:\/\/materialparts.com\/irfr5305trpbf\/"},"modified":"2026-06-29T05:20:54","modified_gmt":"2026-06-29T05:20:54","slug":"irfr5305trpbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irfr5305trpbf\/","title":{"rendered":"IRFR5305TRPBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRFR5305TRPBF from Infineon\/IR is a -55V, -31A P-channel enhancement-mode power MOSFET in a DPAK package. With an ultra-low 65m ohm maximum RDS(ON) at VGS=-10V and 50W power dissipation rating, it is designed for high-current load switching, motor drive, and battery management applications requiring efficient high-side control.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nP-channel enhancement-mode<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-55V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-31A (25C, TC)<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n65m ohm max @ VGS=-10V<\/td>\n<\/tr>\n
Gate Threshold (VGS(th))<\/td>\n-2.0V ~ -4.0V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n50W (25C, TC)<\/td>\n<\/tr>\n
Transconductance<\/td>\n22S typical<\/td>\n<\/tr>\n
Input Capacitance<\/td>\n2800pF typical<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55C ~ +175C<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Ultra-low 65m ohm RDS(ON) for minimal conduction losses<\/li>\n
  • -31A continuous current rating for high-power loads<\/li>\n
  • 50W power dissipation with DPAK thermal pad<\/li>\n
  • Fully avalanche rated for rugged inductive switching<\/li>\n
  • -55V rating suitable for 48V battery systems<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side load switching in automotive and industrial systems<\/li>\n
    • DC motor drive and direction control<\/li>\n
    • Battery management and protection circuits<\/li>\n
    • Power tool and UPS inrush current limiting<\/li>\n
    • Hot-swap and OR-ing controllers<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRFR5305TRPBF from Infineon\/IR is a -55V, -31A P-channel enhancement-mode power MOSFET in a DPAK package. With an ultra-low 65m ohm maximum RDS(ON) at VGS=-10V and 50W power dissipation rating, it is designed for high-current load switching, motor drive, and battery management applications requiring efficient high-side control. Key Specifications Type P-channel enhancement-mode Drain-Source […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-8566","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"Infineon P-ch MOSFET, -55V, -31A, 65m ohm RDS(ON), DPAK, avalanche rated","date_code":"","package_case":"DPAK (IRFR suffix, Tab=Drain)","in_stock":8060,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfr5305pbf.pdf","price":"$0.55 @ 1ku","product_introduction":"The IRFR5305TRPBF from Infineon (formerly International Rectifier) is a -55V, -31A P-channel enhancement-mode power MOSFET in a DPAK surface-mount package. The device features an ultra-low maximum on-resistance of 65m ohm at VGS=-10V, enabling efficient high-side switching with minimal conduction losses even at high load currents. The 50W power dissipation rating (at 25C case temperature) combined with the low thermal resistance of the DPAK package allows effective heat sinking through the PCB copper. The gate threshold voltage range of -2.0V to -4.0V ensures the device can be fully enhanced from 5V logic, though 10V gate drive provides the lowest RDS(ON). The -55V drain-source rating provides adequate margin for 48V battery bus systems including telecommunications (-48V) and automotive (12V\/24V\/48V) applications. The device is fully avalanche rated, absorbing inductive energy during turn-off without external clamp circuits.","working_principle":"The IRFR5305TRPBF operates as a voltage-controlled P-channel switch. When the gate is pulled below the source by more than the threshold voltage (VGS(th) = -2.0V to -4.0V), the MOSFET channel conducts between source and drain. As a P-channel device in the high-side configuration, the source is connected to the positive supply rail, and the gate is pulled to ground (or toward ground) to turn on. The ultra-low 65m ohm RDS(ON) minimizes the voltage drop across the MOSFET during conduction: at 20A, the voltage drop is only 1.3V (20A x 0.065 ohm), and the power dissipation is 26W. The DPAK Tab is connected to the drain, providing a large thermal interface to the PCB for heat removal. During turn-off of inductive loads, the avalanche capability allows the device to absorb the stored energy in the load inductance, clamping the drain voltage until the energy is dissipated in the MOSFET junction.","pin_description":"\n
      Pin<\/th>Name<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Gate Input<\/td><\/tr>\n
      2<\/td>Drain<\/td>Drain (connected to Tab)<\/td><\/tr>\n
      3<\/td>Source<\/td>Source Terminal<\/td><\/tr>\n
      Tab<\/td>Drain<\/td>Drain \/ Thermal Pad<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Automotive high-side switch: Control 12V\/24V\/48V loads from MCU GPIO with simple gate drive (pull gate to ground to turn on)<\/li>\n
      • Motor drive: Implement half-bridge or full-bridge P-channel high-side switches for bidirectional DC motor control<\/li>\n
      • Battery management: Disconnect battery from the load during fault conditions with 65m ohm conduction resistance<\/li>\n
      • Hot-swap controller: Limit inrush current when plugging in cards or modules, then fully enhance for low-loss operation<\/li>\n
      • UPS OR-ing: Combine multiple battery or supply outputs with reverse current blocking through the body diode<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Brand<\/th>VDSS<\/th>ID<\/th>RDS(ON)<\/th><\/tr>\n
        IRFR5305PBF<\/td>Infineon<\/td>-55V<\/td>-31A<\/td>65m ohm<\/td><\/tr>\n
        FQP27P06<\/td>onsemi<\/td>-60V<\/td>-27A<\/td>75m ohm<\/td><\/tr>\n
        IRF9540N<\/td>Infineon<\/td>-100V<\/td>-23A<\/td>117m ohm<\/td><\/tr>\n
        AOD4185<\/td>AOS<\/td>-40V<\/td>-40A<\/td>22m ohm<\/td><\/tr>\n
        SUD50P06-15L<\/td>onsemi<\/td>-60V<\/td>-50A<\/td>15m ohm<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8566","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8566"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8566\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8566"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8566"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8566"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8566"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}