{"id":8563,"date":"2026-06-29T05:20:49","date_gmt":"2026-06-29T05:20:49","guid":{"rendered":"https:\/\/materialparts.com\/nds331n-2\/"},"modified":"2026-06-29T05:20:49","modified_gmt":"2026-06-29T05:20:49","slug":"nds331n-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/nds331n-2\/","title":{"rendered":"NDS331N"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The NDS331N from onsemi\/Fairchild is a -60V, -1.5A P-channel enhancement-mode small-signal MOSFET in a SOT-23 package. With 2.5 ohm maximum RDS(ON) at VGS=-10V and a -1.0V to -2.5V gate threshold, it serves as a convenient high-side load switch and battery disconnect device in portable and battery-powered applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nP-channel enhancement-mode<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-60V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-1.5A<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n2.5 ohm max @ VGS=-10V<\/td>\n<\/tr>\n
Gate Threshold (VGS(th))<\/td>\n-1.0V ~ -2.5V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n400mW (25C)<\/td>\n<\/tr>\n
Transconductance<\/td>\n400mS typical<\/td>\n<\/tr>\n
Input Capacitance<\/td>\n170pF typical<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-23 (3-pin)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • -60V drain-source rating for high-side switching up to 48V rails<\/li>\n
  • Low gate threshold enables direct MCU drive from 3.3V\/5V logic<\/li>\n
  • Compact SOT-23 package for space-constrained designs<\/li>\n
  • 400mS transconductance for efficient switching<\/li>\n
  • Complementary to NDS335N (N-channel) for push-pull configurations<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side load switching and power rail control<\/li>\n
    • Battery disconnect and reverse polarity protection<\/li>\n
    • Power management in portable devices<\/li>\n
    • Logic-level voltage translation<\/li>\n
    • LED and backlight power control<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NDS331N from onsemi\/Fairchild is a -60V, -1.5A P-channel enhancement-mode small-signal MOSFET in a SOT-23 package. With 2.5 ohm maximum RDS(ON) at VGS=-10V and a -1.0V to -2.5V gate threshold, it serves as a convenient high-side load switch and battery disconnect device in portable and battery-powered applications. Key Specifications Type P-channel enhancement-mode Drain-Source […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-8563","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"onsemi P-ch MOSFET, -60V, -1.5A, 2.5 ohm RDS(ON), SOT-23, high-side switch","date_code":"","package_case":"SOT-23 (3-pin, 2.9mm x 1.3mm)","in_stock":14495,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/NDS331N-D.PDF","price":"$0.03 @ 1ku","product_introduction":"The NDS331N from onsemi (formerly Fairchild) is a P-channel enhancement-mode small-signal MOSFET rated for -60V drain-source voltage and -1.5A continuous drain current in a compact SOT-23 surface-mount package. With a maximum on-resistance of 2.5 ohm at VGS=-10V and 4.0 ohm at VGS=-4.5V, it provides efficient switching for moderate current loads. The gate threshold voltage of -1.0V to -2.5V allows the device to be turned on with a relatively small gate-to-source voltage differential, making it compatible with 3.3V and 5V logic for high-side load switching applications. The NDS331N is particularly useful as a high-side power switch, where the P-channel architecture eliminates the need for gate drive voltage above the supply rail, simplifying the control circuit compared to N-channel alternatives.","working_principle":"The NDS331N operates as a voltage-controlled switch in the high-side (positive rail) configuration. When the gate is pulled to ground (VGS = -VDD), the MOSFET turns on and connects the load to the supply rail through the channel. When the gate is pulled to the source voltage (VGS = 0V), the MOSFET turns off and disconnects the load. The on-resistance of 2.5 ohm at VGS=-10V causes a voltage drop proportional to the load current (e.g., 1.5A x 2.5 ohm = 3.75V), which must be considered in low-voltage designs. The body diode inherent in the MOSFET structure conducts from source to drain, providing a natural path for inductive kickback but also allowing current flow when the MOSFET is off if the drain voltage exceeds the source voltage by a diode drop.","pin_description":"\n
      Pin<\/th>Name<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Gate Input<\/td><\/tr>\n
      2<\/td>Source<\/td>Source Terminal<\/td><\/tr>\n
      3<\/td>Drain<\/td>Drain Terminal<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-side load switch: Control 3.3V\/5V\/12V power rails from MCU GPIO without boost circuitry required by N-channel FETs<\/li>\n
      • Battery disconnect: Implement battery disconnect and reverse polarity protection in portable devices up to 48V systems<\/li>\n
      • Power management: Gate power-hungry peripherals on and off in battery-operated systems to extend runtime<\/li>\n
      • Logic-level translation: Convert 3.3V logic to higher-voltage control signals for industrial actuators and relays<\/li>\n
      • LED backlight control: Switch LED string power rails in handheld displays and indicator panels<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Brand<\/th>VDSS<\/th>ID<\/th>RDS(ON)<\/th><\/tr>\n
        MMBF5460<\/td>onsemi<\/td>-60V<\/td>-180mA<\/td>10 ohm<\/td><\/tr>\n
        IRML6402<\/td>Infineon<\/td>-20V<\/td>-1.3A<\/td>80mOhm<\/td><\/tr>\n
        SI2307DS<\/td>Vishay<\/td>-30V<\/td>-2.2A<\/td>80mOhm<\/td><\/tr>\n
        NDS335N<\/td>onsemi<\/td>60V<\/td>1.5A<\/td>2 ohm (N-ch)<\/td><\/tr>\n
        AO3401A<\/td>AOS<\/td>-30V<\/td>-4.3A<\/td>40mOhm<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8563","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8563"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8563\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8563"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8563"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8563"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8563"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}