{"id":8430,"date":"2026-06-29T00:47:47","date_gmt":"2026-06-29T00:47:47","guid":{"rendered":"https:\/\/materialparts.com\/smbt3904dw1t1g\/"},"modified":"2026-06-29T00:47:47","modified_gmt":"2026-06-29T00:47:47","slug":"smbt3904dw1t1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/smbt3904dw1t1g\/","title":{"rendered":"SMBT3904DW1T1G"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The SMBT3904DW1T1G from onsemi is a dual NPN general-purpose bipolar transistor in a compact SOT-363 (SC-88-6) package. Each transistor features 40 V VCEO, 200 mA collector current, hFE of 100-300, and 300 MHz transition frequency, making it ideal for low-power surface mount applications where board space is at a premium.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<ul>\n<li>Configuration: Dual NPN (independent)<\/li>\n<li>VCEO: 40 V<\/li>\n<li>VCBO: 60 V<\/li>\n<li>VEBO: 6 V<\/li>\n<li>IC (continuous): 200 mA<\/li>\n<li>VCE(sat): 300 mV max @ 5 mA, 50 mA<\/li>\n<li>hFE: 100-300 @ 10 mA, 1 V<\/li>\n<li>fT: 300 MHz<\/li>\n<li>Power Dissipation: 150 mW total (both devices)<\/li>\n<li>Operating Temperature: -55\u00b0C to +150\u00b0C<\/li>\n<li>Package: SOT-363 (SC-88-6) (2.00 \u00d7 2.10 \u00d7 1.10 mm)<\/li>\n<\/ul>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Two independent NPN transistors in one package<\/li>\n<li>Low VCE(sat) \u2264 0.4 V<\/li>\n<li>Simplifies circuit design, reduces board space<\/li>\n<li>Pb-Free, Halogen Free, RoHS compliant<\/li>\n<li>AEC-Q101 qualified versions available<\/li>\n<li>ESD HBM Class 2, CDM Class B<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>General-purpose amplification<\/li>\n<li>Switching circuits<\/li>\n<li>Differential amplifier pairs<\/li>\n<li>Current mirror circuits<\/li>\n<li>Low-power signal processing<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The SMBT3904DW1T1G from onsemi is a dual NPN general-purpose bipolar transistor in a compact SOT-363 (SC-88-6) package. Each transistor features 40 V VCEO, 200 mA collector current, hFE of 100-300, and 300 MHz transition frequency, making it ideal for low-power surface mount applications where board space is at a premium. Key Specifications Configuration: [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-8430","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"Dual NPN BJT, 40V, 200mA, hFE 100-300, 300MHz, SOT-363","date_code":"","package_case":"SOT-363 \/ SC-88-6 \/ SC-70-6 (2.00 \u00d7 2.10 \u00d7 1.10 mm)","in_stock":4286,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/mbt3904dw1-d.pdf","price":"$0.085 @ 1ku","product_introduction":"The SMBT3904DW1T1G from onsemi is a dual NPN general-purpose bipolar transistor housed in a space-saving SOT-363 (SC-88-6) surface-mount package. By integrating two independent 2N3904-equivalent transistors in a single package, the device simplifies circuit design and reduces board area and component count. Each transistor offers 40 V VCEO, 200 mA collector current, hFE of 100-300, and 300 MHz transition frequency. The low VCE(sat) of 300 mV maximum at 50 mA ensures efficient switching operation. The compact 2.0 \u00d7 2.1 mm footprint with 1.1 mm profile makes it ideal for high-density, low-power applications. The device is Pb-Free, Halogen Free, and RoHS compliant, with AEC-Q101 qualified variants available for automotive applications.","working_principle":"Each NPN transistor in the SMBT3904DW1T1G operates as a conventional bipolar junction transistor. In the active region, a small base current (IB) controls a larger collector current (IC) with the current gain (hFE) ranging from 100 to 300. In saturation, VCE drops to \u2264 300 mV when properly driven (IB \u2265 IC\/hFE), enabling efficient switching. The two transistors are electrically independent, sharing no connections except the package substrate, allowing flexible circuit configurations such as differential pairs, current mirrors, or push-pull output stages. The 300 MHz transition frequency supports medium-speed signal processing. The SOT-363 package provides sufficient thermal resistance (833\u00b0C\/W junction-to-ambient) for the 150 mW total dissipation rating.","pin_description":"<table border=\"1\"><tr><th>Pin<\/th><th>Name<\/th><th>Description<\/th><\/tr><tr><td>1<\/td><td>E1<\/td><td>Emitter, Transistor 1<\/td><\/tr><tr><td>2<\/td><td>B1<\/td><td>Base, Transistor 1<\/td><\/tr><tr><td>3<\/td><td>C2<\/td><td>Collector, Transistor 2<\/td><\/tr><tr><td>4<\/td><td>E2<\/td><td>Emitter, Transistor 2<\/td><\/tr><tr><td>5<\/td><td>B2<\/td><td>Base, Transistor 2<\/td><\/tr><tr><td>6<\/td><td>C1<\/td><td>Collector, Transistor 1<\/td><\/tr><\/table>","application_scenarios":"<ul><li><b>Differential Amplifiers<\/b>: Matched transistor pair in a single package improves thermal tracking and reduces offset drift<\/li><li><b>Current Mirrors<\/b>: Co-located transistors provide better matching for precision bias current generation<\/li><li><b>Digital Logic Level Shifting<\/b>: 40 V VCEO enables level translation between 3.3 V\/5 V logic and higher voltage domains<\/li><li><b>LED Driver Switches<\/b>: 200 mA per channel drives indicator LEDs with minimal VCE(sat) losses<\/li><li><b>Sensor Signal Conditioning<\/b>: Low-noise amplification for temperature, pressure, and light sensors<\/li><\/ul>","alternative_models":"<table border=\"1\"><tr><th>Model<\/th><th>Brand<\/th><th>Config<\/th><th>VCEO (V)<\/th><th>IC (mA)<\/th><\/tr><tr><td>MBT3904DW1T1G<\/td><td>onsemi<\/td><td>Dual NPN<\/td><td>40<\/td><td>200<\/td><\/tr><tr><td>MBT3904DW2T1G<\/td><td>onsemi<\/td><td>Dual NPN<\/td><td>40<\/td><td>200<\/td><\/tr><tr><td>BC847BW<\/td><td>Nexperia<\/td><td>Single NPN<\/td><td>45<\/td><td>100<\/td><\/tr><tr><td>BCV61<\/td><td>Nexperia<\/td><td>Dual NPN<\/td><td>45<\/td><td>100<\/td><\/tr><tr><td>MMBT3904LT1G<\/td><td>onsemi<\/td><td>Single NPN<\/td><td>40<\/td><td>200<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8430","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8430"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8430\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8430"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8430"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8430"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8430"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}