{"id":8367,"date":"2026-06-28T12:43:07","date_gmt":"2026-06-28T12:43:07","guid":{"rendered":"https:\/\/materialparts.com\/t2n7002bklm\/"},"modified":"2026-06-28T12:43:07","modified_gmt":"2026-06-28T12:43:07","slug":"t2n7002bklm","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/t2n7002bklm\/","title":{"rendered":"T2N7002BKLM"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The T2N7002BKLM from onsemi is an N-channel enhancement mode MOSFET in a SOT-723 package. With a 60 V drain-source voltage, 200 mA continuous drain current, and low threshold voltage, it is designed for low-power switching and logic-level load control in ultra-compact PCB layouts.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>VDS<\/td>\n<td>60 V<\/td>\n<\/tr>\n<tr>\n<td>\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n<td>200 mA<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) max @ VGS=10V<\/td>\n<td>5 \u03a9<\/td>\n<\/tr>\n<tr>\n<td>VGS(th)<\/td>\n<td>1.0 V to 2.5 V<\/td>\n<\/tr>\n<tr>\n<td>Qg typ<\/td>\n<td>0.8 nC<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SOT-723<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Ultra-small SOT-723 package for high-density layouts<\/li>\n<li>Low threshold voltage for direct logic-level drive<\/li>\n<li>Low gate charge (0.8 nC) for fast switching<\/li>\n<li>60 V rating suitable for 24 V and 48 V systems<\/li>\n<li>Pb-Free and RoHS compliant<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Logic-level load switching<\/li>\n<li>Battery-powered device power routing<\/li>\n<li>LED backlight control<\/li>\n<li>Sensor signal gating<\/li>\n<li>Level shifting and interface circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The T2N7002BKLM from onsemi is an N-channel enhancement mode MOSFET in a SOT-723 package. With a 60 V drain-source voltage, 200 mA continuous drain current, and low threshold voltage, it is designed for low-power switching and logic-level load control in ultra-compact PCB layouts. Key Specifications VDS 60 V ID 200 mA RDS(on) max [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-8367","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"60V N-ch MOSFET, 200mA, 5ohm Rds, SOT-723, logic-level gate","date_code":"","package_case":"SOT-723 (2.00 x 1.25 x 0.80 mm)","in_stock":13850,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/t2n7002bk-d.pdf","price":"$0.03 @ 1ku","product_introduction":"The T2N7002BKLM from onsemi is a small-signal N-channel enhancement mode MOSFET in an ultra-compact SOT-723 surface-mount package measuring only 2.00 x 1.25 x 0.80 mm. Rated at 60 V drain-source voltage and 200 mA continuous drain current, it is designed for low-power switching applications where board space is at a premium. The low threshold voltage range (1.0 V to 2.5 V) enables direct drive from 1.8 V, 2.5 V, or 3.3 V logic levels without level-shifting circuitry. The RDS(on) of 5 \u03a9 maximum at VGS = 10 V and ultra-low gate charge of 0.8 nC support fast switching with minimal driver power. The device is Pb-Free and RoHS compliant, making it suitable for consumer electronics, portable devices, and general-purpose switching in high-density PCB layouts.","working_principle":"The T2N7002BKLM is an N-channel enhancement mode vertical DMOS MOSFET. When a gate-source voltage above the threshold (1.0-2.5 V) is applied, an inversion layer forms in the P-body region beneath the gate oxide, creating a conduction channel between source and drain. The device operates as a voltage-controlled switch where the gate voltage controls the drain-source current flow. The low 0.8 nC gate charge enables fast switching transitions with minimal energy per cycle, important for high-frequency PWM applications. The 60 V drain-source breakdown voltage provides adequate margin for 24 V and 48 V nominal systems. The small SOT-723 package minimizes parasitic inductance, supporting clean switching waveforms even at moderate frequencies.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>G<\/td><td>Gate terminal<\/td><\/tr><tr><td>2<\/td><td>S<\/td><td>Source terminal<\/td><\/tr><tr><td>3<\/td><td>D<\/td><td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"<ul><li><strong>Logic-Level Load Switch<\/strong>: Low-side N-FET switch for LED indicators, relay coils, and bias networks controlled by MCU GPIO<\/li><li><strong>Battery Power Routing<\/strong>: Power path selection and load disconnect in portable devices with coin-cell or Li-ion batteries<\/li><li><strong>Signal Gating<\/strong>: Analog signal path switching and sample-and-hold gate control in sensor interfaces<\/li><li><strong>Level Shifting<\/strong>: Open-drain level translator between 1.8 V logic and 5 V peripheral domains<\/li><li><strong>LED Backlight Control<\/strong>: PWM dimming switch for LCD backlight LED strings in handheld displays<\/li><\/ul>","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>VDS<\/th><th>ID<\/th><th>RDS(on)<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>2N7002ET1G<\/td><td>onsemi<\/td><td>60 V<\/td><td>200 mA<\/td><td>5 \u03a9<\/td><td>SOT-23<\/td><td>Same die, larger package<\/td><\/tr><tr><td>BSS138-7-F<\/td><td>Diodes Inc<\/td><td>50 V<\/td><td>220 mA<\/td><td>3.5 \u03a9<\/td><td>SOT-23<\/td><td>Lower RDS, lower VDS<\/td><\/tr><tr><td>2N7002KW-7<\/td><td>Diodes Inc<\/td><td>60 V<\/td><td>200 mA<\/td><td>5 \u03a9<\/td><td>SOT-323<\/td><td>Smaller package<\/td><\/tr><tr><td>NX3008NBKTCG<\/td><td>onsemi<\/td><td>60 V<\/td><td>200 mA<\/td><td>4 \u03a9<\/td><td>SOT-723<\/td><td>Dual N-ch in same package<\/td><\/tr><tr><td>SI2302DS-T1-E3<\/td><td>Vishay<\/td><td>20 V<\/td><td>1.1 A<\/td><td>0.1 \u03a9<\/td><td>SOT-23<\/td><td>Lower VDS, much higher ID<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8367","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8367"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8367\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8367"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8367"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8367"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8367"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}