{"id":8355,"date":"2026-06-28T12:42:50","date_gmt":"2026-06-28T12:42:50","guid":{"rendered":"https:\/\/materialparts.com\/ipg16n10s4-61\/"},"modified":"2026-06-28T12:42:50","modified_gmt":"2026-06-28T12:42:50","slug":"ipg16n10s4-61","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/ipg16n10s4-61\/","title":{"rendered":"IPG16N10S4-61"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IPG16N10S4-61 from Infineon is a 100 V, 16 A N-channel OptiMOS power MOSFET in a PG-DSO-8 (SO-8) package. Part of Infineon’s OptiMOS family, it combines low RDS(on) with fast switching performance, targeting DC-DC converters, motor drive, and load switch applications.<\/p>\n

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VDS<\/td>\n100 V<\/td>\n<\/tr>\n
ID (max)<\/td>\n16 A<\/td>\n<\/tr>\n
RDS(on) max<\/td>\n16 m\u03a9 @ VGS=10V<\/td>\n<\/tr>\n
Qg typ<\/td>\n18 nC @ VGS=10V<\/td>\n<\/tr>\n
VGS(th) typ<\/td>\n2.5 V<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nPG-DSO-8 (SO-8)<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • OptiMOS technology for low RDS(on) and low switching losses<\/li>\n
  • 100 V breakdown voltage for 48 V bus applications<\/li>\n
  • Low gate charge for high-frequency operation<\/li>\n
  • Compact SO-8 footprint<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • 48 V DC-DC converters and telecom power<\/li>\n
    • Motor drive and inverter stages<\/li>\n
    • Load switches and hot-swap controllers<\/li>\n
    • Battery management systems<\/li>\n
    • Industrial power distribution<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IPG16N10S4-61 from Infineon is a 100 V, 16 A N-channel OptiMOS power MOSFET in a PG-DSO-8 (SO-8) package. Part of Infineon’s OptiMOS family, it combines low RDS(on) with fast switching performance, targeting DC-DC converters, motor drive, and load switch applications. Key Specifications VDS 100 V ID (max) 16 A RDS(on) max 16 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-8355","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"100V, 16A N-ch OptiMOS, 16mOhm Rds, SO-8, DC-DC and motor drive","date_code":"","package_case":"SO-8 (PG-DSO-8) (5.00 x 6.00 x 1.75 mm)","in_stock":14094,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IPG16N10S4-61-DS-v01_00-EN.pdf","price":"$0.65 @ 1ku","product_introduction":"The IPG16N10S4-61 is a 100 V N-channel power MOSFET from Infineon's OptiMOS family, designed for high-efficiency power conversion in 48 V and higher voltage systems. The device features a maximum RDS(on) of 16 m\u03a9 at VGS = 10 V and a continuous drain current rating of 16 A, making it suitable for medium-power DC-DC converters, motor drives, and load switch applications. The OptiMOS trench technology provides an excellent balance between on-state resistance and switching losses, with a typical total gate charge of only 18 nC. The SO-8 package is widely supported in PCB assembly and offers a compact footprint for space-constrained designs. The 100 V rating provides margin for 48 V nominal bus systems with transient requirements.","working_principle":"The IPG16N10S4-61 is an N-channel enhancement-mode vertical DMOS power MOSFET fabricated using Infineon's OptiMOS trench gate technology. When a gate-source voltage above the threshold is applied, an inversion layer forms in the P-body beneath the trench gate, creating a conduction channel. Current flows vertically from drain to source through the channel and the lightly doped drift region. The trench gate structure maximizes channel density while the optimized epitaxial layer and cell geometry minimize specific on-resistance. The 100 V blocking capability is achieved through careful design of the drift region doping and thickness. During switching, the gate driver must supply charge to the gate-source and gate-drain capacitances, and the low 18 nC total gate charge enables fast transitions with modest driver capability.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>Gate<\/td>Gate drive terminal<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>Source<\/td>Source terminal<\/td><\/tr>
      5-8<\/td>Drain<\/td>Drain terminals (connected to leadframe)<\/td><\/tr><\/table>","application_scenarios":"
      • 48 V Telecom DC-DC<\/strong>: Buck and half-bridge converter stages in 48 V input systems<\/li>
      • Motor Drive Inverters<\/strong>: Three-phase inverter switches for BLDC and PMSM motors<\/li>
      • Load Switching<\/strong>: High-side load switches with inrush current limiting in hot-swap applications<\/li>
      • Battery Management<\/strong>: Charge and discharge path switching in 48 V battery systems<\/li>
      • Industrial Power<\/strong>: Reverse polarity protection and power OR-ing in industrial supplies<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VDS<\/th>ID<\/th>RDS(on)<\/th>Package<\/th>Notes<\/th><\/tr>
        IRF7484MTRPBF<\/td>Infineon<\/td>100 V<\/td>12 A<\/td>22 m\u03a9<\/td>SO-8<\/td>Lower current, same family<\/td><\/tr>
        FDD86102<\/td>onsemi<\/td>100 V<\/td>11 A<\/td>18 m\u03a9<\/td>SO-8<\/td>Similar performance<\/td><\/tr>
        SI4892DY-T1-E3<\/td>Vishay<\/td>100 V<\/td>12 A<\/td>18 m\u03a9<\/td>SO-8<\/td>Alternative option<\/td><\/tr>
        IPG20N10S4-61<\/td>Infineon<\/td>100 V<\/td>20 A<\/td>12 m\u03a9<\/td>SO-8<\/td>Higher current variant<\/td><\/tr>
        BSZ100N10NS3G<\/td>Infineon<\/td>100 V<\/td>30 A<\/td>10 m\u03a9<\/td>PG-TDSON-8<\/td>Lower RDS, higher ID<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8355","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8355"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8355\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8355"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8355"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8355"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8355"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}