{"id":8343,"date":"2026-06-28T12:26:36","date_gmt":"2026-06-28T12:26:36","guid":{"rendered":"https:\/\/materialparts.com\/mura110t3g\/"},"modified":"2026-06-28T12:26:36","modified_gmt":"2026-06-28T12:26:36","slug":"mura110t3g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/mura110t3g\/","title":{"rendered":"MURA110T3G"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The MURA110T3G from onsemi is a 1 A, 100 V ultra-low recovery power rectifier in an SMA (DO-214AC) surface-mount package. It features a forward voltage drop of 775 mV at 1 A and a reverse recovery time of just 25 ns, combining the current handling of a power rectifier with the switching speed needed for high-frequency power conversion.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>Reverse Voltage (VRRM)<\/td>\n<td>100 V<\/td>\n<\/tr>\n<tr>\n<td>Average Forward Current (IFAV)<\/td>\n<td>1 A<\/td>\n<\/tr>\n<tr>\n<td>Forward Voltage (VF @ 1 A)<\/td>\n<td>775 mV (max)<\/td>\n<\/tr>\n<tr>\n<td>Reverse Recovery Time (trr)<\/td>\n<td>25 ns (typ)<\/td>\n<\/tr>\n<tr>\n<td>Reverse Leakage (IR)<\/td>\n<td>2 \u00b5A (typ)<\/td>\n<\/tr>\n<tr>\n<td>Peak Forward Surge (IFSM)<\/td>\n<td>30 A<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SMA (DO-214AC)<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Ultra-fast 25 ns reverse recovery time<\/li>\n<li>Low forward voltage drop: 775 mV at 1 A<\/li>\n<li>Low leakage current: 2 \u00b5A typical at rated VR<\/li>\n<tr>\n<li>AEC-Q101 qualified for automotive applications<\/li>\n<li>Pb-Free and RoHS compliant<\/li>\n<li>175\u00b0C maximum junction temperature<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Switch-mode power supply output rectification<\/li>\n<li>Freewheeling diode in motor drive circuits<\/li>\n<li>Reverse polarity protection in automotive systems<\/li>\n<li>DC-DC converter output stages<\/li>\n<li>Polarity protection and OR-ing diodes<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The MURA110T3G from onsemi is a 1 A, 100 V ultra-low recovery power rectifier in an SMA (DO-214AC) surface-mount package. It features a forward voltage drop of 775 mV at 1 A and a reverse recovery time of just 25 ns, combining the current handling of a power rectifier with the switching speed [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-8343","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"1A, 100V ultra-fast recovery rectifier, 25ns trr, 775mV VF, SMA package","date_code":"","package_case":"SMA (DO-214AC) (5.20 x 2.60 x 2.15 mm)","in_stock":6054,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/MURA110T3-D.PDF","price":"$0.12 @ 1ku","product_introduction":"The MURA110T3G is an ultra-fast recovery power rectifier from onsemi rated at 1 A average forward current and 100 V reverse voltage. Housed in the compact SMA (DO-214AC) surface-mount package, it combines the current-carrying capability of a power rectifier with the ultra-fast 25 ns reverse recovery time needed for high-frequency switching applications. The device exhibits a low forward voltage drop of 775 mV at 1 A and a typical reverse leakage current of only 2 \u00b5A. With a maximum junction temperature rating of 175\u00b0C and AEC-Q101 qualification, the MURA110T3G is well suited for demanding automotive and industrial power conversion circuits where both speed and reliability are essential.","working_principle":"The MURA110T3G utilizes a PIN (P-Intrinsic-N) rectifier structure optimized for ultra-fast reverse recovery. During forward conduction, minority carriers are injected into the intrinsic region, creating a low forward voltage drop. When the applied voltage reverses, these stored carriers must be swept out before the diode can block. The MURA110T3G employs controlled platinum doping that creates recombination centers in the silicon, dramatically accelerating carrier recombination and reducing the reverse recovery time to just 25 ns. This results in significantly lower switching losses compared to standard PN junction rectifiers, making it ideal for high-frequency switch-mode power supplies and freewheeling applications where fast turn-off minimizes power dissipation.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Cathode<\/td><td>Negative terminal; identified by cathode bar on package<\/td><\/tr><tr><td>2<\/td><td>Anode<\/td><td>Positive terminal<\/td><\/tr><\/table><p>Package: SMA (DO-214AC), Case 403AL. Pin 1 (Cathode) is identified by the white bar marking on the package top surface. The device is a two-terminal rectifier with no additional pins.<\/p>","application_scenarios":"<ul><li><strong>SMPS Output Rectification<\/strong>: High-frequency secondary-side rectification in forward and flyback converters up to several hundred kHz<\/li><li><strong>Freewheeling Diode<\/strong>: Clamp diode across inductive loads such as relay coils and motor windings<\/li><li><strong>Automotive Reverse Protection<\/strong>: Battery input reverse polarity protection in automotive ECUs<\/li><li><strong>DC-DC Converter Stages<\/strong>: Output rectification in buck, boost, and buck-boost converter topologies<\/li><li><strong>OR-ing Diode Applications<\/strong>: Power supply redundancy and hot-swap current steering<\/li><\/ul>","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>IF<\/th><th>VR<\/th><th>trr<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>US1M-13-F<\/td><td>Diodes Inc<\/td><td>1 A<\/td><td>1000 V<\/td><td>75 ns<\/td><td>SMA<\/td><td>Higher voltage, slower<\/td><\/tr><tr><td>MURS110T3G<\/td><td>onsemi<\/td><td>1 A<\/td><td>100 V<\/td><td>25 ns<\/td><td>SMB<\/td><td>Same die, larger package<\/td><\/tr><tr><td>S1M-13-F<\/td><td>Diodes Inc<\/td><td>1 A<\/td><td>1000 V<\/td><td>1.5 \u00b5s<\/td><td>SMA<\/td><td>Standard recovery<\/td><\/tr><tr><td>MURA120T3G<\/td><td>onsemi<\/td><td>2 A<\/td><td>200 V<\/td><td>25 ns<\/td><td>SMA<\/td><td>Higher current and voltage<\/td><\/tr><tr><td>F1M-13-F<\/td><td>Diodes Inc<\/td><td>1 A<\/td><td>1000 V<\/td><td>50 ns<\/td><td>SMA<\/td><td>Fast recovery, higher VR<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8343","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=8343"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/8343\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=8343"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=8343"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=8343"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=8343"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}