{"id":7967,"date":"2026-06-28T06:17:35","date_gmt":"2026-06-28T06:17:35","guid":{"rendered":"https:\/\/materialparts.com\/irf4905pbf-2\/"},"modified":"2026-06-28T11:37:24","modified_gmt":"2026-06-28T11:37:24","slug":"irf4905pbf-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf4905pbf-2\/","title":{"rendered":"IRF4905PBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF4905PBF from Infineon Technologies is a -55V P-channel HEXFET power MOSFET with 20m\u03a9 on-resistance, -74A continuous drain current, and 200W power dissipation in a TO-220 package \u2014 the P-channel complement to the IRF3205 for high-side switching applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nP-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-55V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-74A @ TC=25\u00b0C; -52A @ TC=100\u00b0C<\/td>\n<\/tr>\n
Pulsed Drain Current (IDM)<\/td>\n-260A<\/td>\n<\/tr>\n
On-Resistance (RDS(on))<\/td>\n0.020\u03a9 (20m\u03a9) @ VGS=-10V, ID=-38A<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th))<\/td>\n-2.0V to -4.0V<\/td>\n<\/tr>\n
Forward Transconductance (gfs)<\/td>\n21S typical<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n180nC max (120nC typ @10V per Infineon)<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n3400pF @ VDS=-25V<\/td>\n<\/tr>\n
Turn-On Delay \/ Rise Time<\/td>\n18ns \/ 99ns typical<\/td>\n<\/tr>\n
Turn-Off Delay \/ Fall Time<\/td>\n61ns \/ 96ns typical<\/td>\n<\/tr>\n
Body Diode Forward Voltage (VSD)<\/td>\n-1.6V typical @ IS=-38A<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n89ns typical<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n200W @ TC=25\u00b0C<\/td>\n<\/tr>\n
Thermal Resistance (\u03b8JC)<\/td>\n0.75\u00b0C\/W<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-220AB (through-hole, tab=Drain)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Ultra-low RDS(on): 20m\u03a9 \u2014 low for a P-channel MOSFET<\/li>\n
  • -74A continuous drain current<\/li>\n
  • Fully avalanche rated<\/li>\n
  • 175\u00b0C maximum junction temperature<\/li>\n
  • High-side switch capability (source to VDD)<\/li>\n
  • P-channel \u2014 gate pulled LOW turns ON<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side power switching<\/li>\n
    • Battery disconnect \/ protection<\/li>\n
    • Reverse polarity protection<\/li>\n
    • Motor H-bridge (P-ch high side + N-ch low side)<\/li>\n
    • Load switching in automotive systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF4905PBF from Infineon Technologies is a -55V P-channel HEXFET power MOSFET with 20m\u03a9 on-resistance, -74A continuous drain current, and 200W power dissipation in a TO-220 package \u2014 the P-channel complement to the IRF3205 for high-side switching applications. Key Specifications Type P-Channel Enhancement MOSFET Drain-Source Voltage (VDSS) -55V Continuous Drain Current (ID) -74A […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-7967","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"P-ch MOSFET, -55V -74A, 20m\u03a9, TO-220, high-side switch","date_code":"","package_case":"TO-220AB (15.6 x 10.6 x 4.6mm, through-hole, tab=Drain)","in_stock":33428,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf4905pbf.pdf?fileId=5546d462533600a4015355e329b1197e","price":"$1.00 @ 1ku","product_introduction":"The IRF4905PBF from Infineon Technologies (formerly International Rectifier) is a -55V P-channel power MOSFET with 20m\u03a9 on-resistance and -74A drain current. As a P-channel device, it excels at high-side switching: the source connects to the positive supply rail, and pulling the gate LOW (below the source by at least 10V) turns the MOSFET ON. This eliminates the need for a bootstrap charge pump that N-channel high-side drivers require, simplifying the gate drive circuit significantly. The 20m\u03a9 RDS(on) is impressive for a P-channel MOSFET (P-channel typically has 2-3\u00d7 the RDS(on) of an equivalent N-channel due to lower hole mobility), but it's still 2.5\u00d7 the 8m\u03a9 of the N-channel IRF3205. At 20A load, the conduction loss is P = I\u00b2\u00d7RDS(on) = 400\u00d70.02 = 8W \u2014 manageable with a moderate heatsink. The IRF4905 is the P-channel complement commonly paired with the IRF3205 (N-channel) in half-bridge and H-bridge motor drive circuits. The PBF suffix denotes the lead-free TO-220 package.","working_principle":"The IRF4905PBF is a P-channel enhancement-mode MOSFET. Current flows from source to drain (conventional current) when the gate is pulled LOW relative to the source by at least |VGS(th)| (2-4V). For minimum RDS(on) of 20m\u03a9, VGS must be at least -10V (i.e., gate is 10V below the source). For a high-side switch with source at +12V: the gate must be pulled to +2V or lower (12V \u2212 10V = 2V) for full enhancement. A simple NPN transistor or N-channel MOSFET can pull the gate to GND (VGS = -12V, well beyond the -10V requirement). To turn OFF, the gate must be pulled up to near the source voltage (VGS \u2248 0V). A pull-up resistor (10k\u03a9) from gate to source ensures the MOSFET turns off when the NPN driver is off. Important: VGS must never exceed \u00b120V. In a 24V system, pulling the gate to GND gives VGS = -24V, exceeding the absolute maximum. A Zener clamp (15V Zener between gate and source) is required. The body diode points from source to drain (anode at source), so it conducts when drain voltage exceeds source voltage. In an H-bridge, the body diode serves as a freewheeling path. The 89ns reverse recovery time of the body diode is moderate \u2014 adequate for frequencies below 50kHz.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. Pull Gate BELOW Source to enhance the P-channel MOSFET. Apply VGS < -4V (-10V recommended for lowest RDS(on) of 78m\u03a9). Maximum VGS rating is \u00b120V. Gate charge is 120nC typical. Use a gate resistor (10-47\u03a9) in series to control turn-on dv\/dt and reduce ringing.<\/td><\/tr>\n
      2<\/td>Drain<\/td>Power Output<\/td>Drain terminal connected to the load. Rated for -55V VDS and -74A continuous drain current at TC=25\u00b0C. The TO-220 tab is electrically connected to Drain. On-resistance is 78m\u03a9 typ at VGS=-10V, ID=-39A. Maximum power dissipation 250W at TC=25\u00b0C.<\/td><\/tr>\n
      3<\/td>Source<\/td>Power Output<\/td>Source terminal typically connected to the positive supply rail for high-side P-channel switching. Internal body diode conducts from Drain to Source (opposite direction to N-channel). Ideal for reverse-polarity protection, battery disconnect switches, and high-side load switching up to 55V.<\/td><\/tr>\n<\/table>\n

      IRF4905PBF pin assignment (TO-220-3, front view, pins down): Pin 1 (left) = Gate, Pin 2 (center) = Drain\/Tab, Pin 3 (right) = Source. This is a P-channel MOSFET \u2014 Gate must be pulled below Source to turn ON. Common application: Source to VCC, Drain to load, Gate to GND for ON and Gate to VCC for OFF. The tab is connected to Drain. Complementary N-channel: IRF3205 (55V\/110A). For surface-mount, use IRF4905SPBF (D2PAK).<\/p>","application_scenarios":"

        \n
      • High-Side Switch (12V):<\/strong> Source\u2192+12V; Gate\u2192NPN collector (emitter GND); 10k\u03a9 pull-up gate-to-source; Load between drain and GND; MCU\u2192NPN base\u2192gate LOW\u2192MOSFET ON<\/li>\n
      • Battery Disconnect:<\/strong> Source\u2192Battery+; Drain\u2192System VCC; Gate pulled LOW by control circuit = battery connected; Gate released = battery disconnected<\/li>\n
      • Reverse Polarity Protection:<\/strong> Source\u2192Battery+; Drain\u2192System; Gate\u2192GND; if battery reversed, body diode blocks and MOSFET stays off<\/li>\n
      • H-Bridge Motor Drive:<\/strong> IRF4905 (P-ch) on high sides; IRF3205 (N-ch) on low sides; gate drivers for each; bidirectional motor control<\/li>\n
      • 24V System (with clamp):<\/strong> 15V Zener gate-to-source; Source\u2192+24V; Gate driver pulls to +9V (VGS=-15V, within limits)<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        IRF9540NPBF<\/td>Infineon<\/td>-100V\/-19A\/0.2\u03a9, higher voltage, lower current<\/td>-<\/td>-<\/td><\/tr>\n
        IRF4905SPBF<\/td>Infineon<\/td>Same in D2PAK (TO-263) surface-mount<\/td>-<\/td>-<\/td><\/tr>\n
        IRF3205PBF<\/td>Infineon<\/td>N-channel complement, 55V\/110A\/8m\u03a9<\/td>-<\/td>-<\/td><\/tr>\n
        FQP47P06<\/td>onsemi<\/td>-60V\/-47A\/26m\u03a9, similar range, TO-220<\/td>-<\/td>-<\/td><\/tr>\n
        NDP6020P<\/td>onsemi<\/td>-20V\/-20A\/0.065\u03a9, logic-level gate, TO-220<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        IRF4905PBF is a -55V\/-74A P-channel MOSFET from Infineon in TO-220. The IRF4905SPBF provides the same in D2PAK surface-mount. The FQP47P06 offers lower 26m\u03a9 RDS(on) at -60V\/-47A from ONsemi. The IRFP460 is an N-channel alternative for complementary push-pull designs. The SUM110P06-25 from Vishay provides -60V\/-110A with 18m\u03a9 for extreme current applications. The IRF9540NPBF offers -100V\/-19A for higher voltage at lower current. For logic-level drive, IRL4905PBF is not available \u2014 use FQP47P06 which reaches full enhancement at -5V VGS.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7967","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7967"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7967\/revisions"}],"predecessor-version":[{"id":8217,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7967\/revisions\/8217"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7967"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7967"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7967"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7967"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}