{"id":7952,"date":"2026-06-28T06:10:13","date_gmt":"2026-06-28T06:10:13","guid":{"rendered":"https:\/\/materialparts.com\/irf3205pbf-2\/"},"modified":"2026-06-28T11:37:47","modified_gmt":"2026-06-28T11:37:47","slug":"irf3205pbf-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf3205pbf-2\/","title":{"rendered":"IRF3205PBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF3205PBF from Infineon Technologies is a 55V N-channel HEXFET power MOSFET with ultra-low 8m\u03a9 on-resistance, 110A continuous drain current, and 200W power dissipation in a TO-220 package \u2014 the industry benchmark for low-voltage, high-current switching.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n55V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n110A @ TC=25\u00b0C; 80A @ TC=100\u00b0C<\/td>\n<\/tr>\n
Pulsed Drain Current (IDM)<\/td>\n390A<\/td>\n<\/tr>\n
On-Resistance (RDS(on))<\/td>\n8.0m\u03a9 @ VGS=10V, ID=62A<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th))<\/td>\n2.0V to 4.0V (3.0V typical)<\/td>\n<\/tr>\n
Forward Transconductance (gfs)<\/td>\n44 S typical<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n146nC typical @ VDS=44V, VGS=10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n3247pF @ VDS=25V<\/td>\n<\/tr>\n
Turn-On Delay \/ Rise Time<\/td>\n14ns \/ 101ns typical<\/td>\n<\/tr>\n
Turn-Off Delay \/ Fall Time<\/td>\n50ns \/ 65ns typical<\/td>\n<\/tr>\n
\u0627\u0644\u0635\u0645\u0627\u0645 \u0627\u0644\u062b\u0646\u0627\u0626\u064a \u0627\u0644\u062c\u0633\u0645 VSD<\/td>\n1.3V typical @ IS=62A<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n69ns typical<\/td>\n<\/tr>\n
\u0637\u0627\u0642\u0629 \u0627\u0644\u0627\u0646\u0647\u064a\u0627\u0631 \u0627\u0644\u062c\u0644\u064a\u062f\u064a (EAS)<\/td>\n264mJ (single pulse)<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n200W @ TC=25\u00b0C<\/td>\n<\/tr>\n
Thermal Resistance (\u03b8JC)<\/td>\n0.75\u00b0C\/W<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-220AB (through-hole, tab=Drain)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Ultra-low RDS(on): 8m\u03a9 \u2014 among the lowest in 55V class<\/li>\n
  • 110A continuous drain current<\/li>\n
  • Fully avalanche rated<\/li>\n
  • 175\u00b0C maximum junction temperature<\/li>\n
  • Dynamic dv\/dt rating<\/li>\n
  • Advanced HEXFET planar technology<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • DC-DC buck\/boost converters (12V systems)<\/li>\n
    • Motor drive and H-bridge<\/li>\n
    • Automotive electrical systems<\/li>\n
    • Load switching and battery management<\/li>\n
    • Inverter power stage<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF3205PBF from Infineon Technologies is a 55V N-channel HEXFET power MOSFET with ultra-low 8m\u03a9 on-resistance, 110A continuous drain current, and 200W power dissipation in a TO-220 package \u2014 the industry benchmark for low-voltage, high-current switching. Key Specifications Type N-Channel Enhancement MOSFET Drain-Source Voltage (VDSS) 55V Continuous Drain Current (ID) 110A @ TC=25\u00b0C; […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-7952","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"55V 110A N-ch MOSFET, 8m\u03a9, TO-220, ultra-low RDS(on)","date_code":"","package_case":"TO-220AB (15.6 x 10.6 x 4.6mm, through-hole, tab=Drain)","in_stock":3365,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf3205pbf.pdf?fileId=5546d462533600a4015355def244190a","price":"$0.677 @ 1ku","product_introduction":"The IRF3205PBF from Infineon Technologies (formerly International Rectifier) is a 55V N-channel power MOSFET with 8m\u03a9 on-resistance and 110A continuous drain current, making it one of the most capable devices in the sub-60V class. The ultra-low RDS(on) of 8m\u03a9 means that at 20A load, the voltage drop across the MOSFET is only 160mV and conduction loss is just 3.2W \u2014 significantly less than the IRF540N (44m\u03a9) which would dissipate 17.6W at the same current. This makes the IRF3205 the preferred choice for high-efficiency applications where thermal management is critical. The 55V rating is suitable for 12V and 24V systems (including automotive 14.4V), where load dump transients can reach 40V but not 55V. The 146nC total gate charge is relatively high, making the IRF3205 better suited for switching frequencies below 100kHz; at higher frequencies, the gate drive losses become significant. The PBF suffix denotes the lead-free (Pb-free) version in TO-220 package.","working_principle":"The IRF3205PBF operates as an N-channel enhancement-mode MOSFET. When VGS exceeds the threshold (2-4V), a conductive channel forms between drain and source. For minimum RDS(on) of 8m\u03a9, VGS must be at least 10V. At VGS=4.5V, RDS(on) is significantly higher (~15-20m\u03a9). The extremely low 8m\u03a9 is achieved through a large silicon die with many parallel HEXFET cells, which also explains the high 3247pF input capacitance and 146nC gate charge. The gate driver must supply this charge rapidly for fast switching; a driver capable of 2A can switch the IRF3205 in approximately 75ns. However, the high Ciss means that at high frequencies (>100kHz), the gate drive power dissipation (Pgate = Qg \u00d7 VGS \u00d7 f) becomes substantial. At 50kHz, Pgate = 146nC \u00d7 10V \u00d7 50kHz = 73mW, which is manageable. At 500kHz, Pgate = 730mW, which may be problematic. The body diode has a forward voltage of 1.3V and reverse recovery time of 69ns, making it suitable for moderate-frequency freewheeling applications. For synchronous rectification at high frequencies, a MOSFET with faster body diode (or an external Schottky) is preferred.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. Apply VGS > 4V (10V recommended for lowest RDS(on)) to fully enhance the MOSFET. Gate charge is 146nC typical. Maximum VGS rating is \u00b120V. Keep gate drive loop area minimal to reduce ringing and EMI.<\/td><\/tr>\n
      2<\/td>Drain<\/td>Power Output<\/td>Drain terminal connected to the load. Rated for 55V VDS and 110A continuous drain current at TC=25\u00b0C. The tab of TO-220 package is electrically connected to Drain. On-resistance is 8m\u03a9 typ at VGS=10V, ID=53A.<\/td><\/tr>\n
      3<\/td>Source<\/td>Power Output<\/td>Source terminal typically connected to ground (low-side switch) or load (high-side). Internal body diode conducts from Source to Drain with VSD \u2248 1.3V. Avalanche energy rating 520mJ for unclamped inductive switching.<\/td><\/tr>\n<\/table>\n

      IRF3205PBF pin assignment (TO-220-3, front view, pins down): Pin 1 (left) = Gate, Pin 2 (center) = Drain\/Tab, Pin 3 (right) = Source. The metal tab on the back is electrically connected to Drain (Pin 2). For low-side switching, Source connects to GND and Drain to the load. Gate drive voltage of 10V provides minimum 8m\u03a9 RDS(on). For logic-level drive, consider IRLZ44N which reaches full enhancement at 5V VGS.<\/p>","application_scenarios":"

        \n
      • 12V Buck Converter:<\/strong> IRF3205 as high-side switch; 50kHz; VGS=10V; Schottky or sync rect on low side; 12V to 3.3V at 30A; Pcond = I\u00b2\u00d7RDS(on) = 900\u00d70.008 = 7.2W<\/li>\n
      • Motor H-Bridge:<\/strong> 4\u00d7 IRF3205; 24V DC motor at 30A; RDS(on) per device = 8m\u03a9; total bridge drop = 2\u00d730A\u00d78m\u03a9 = 0.48V; very low loss<\/li>\n
      • Automative Load Switch:<\/strong> Battery \u2192 IRF3205 \u2192 load; VGS=10V from gate driver; 40A continuous; heatsink required<\/li>\n
      • Battery Protection:<\/strong> IRF3205 in series with battery; back-to-back for bidirectional cutoff; RDS(on)=8m\u03a9 minimizes voltage drop<\/li>\n
      • Inverter:<\/strong> Full-bridge with 4\u00d7 IRF3205; 12V to AC; 50Hz; low switching losses at this frequency<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        IRF3205SPBF<\/td>Infineon<\/td>Same in D2PAK (TO-263) surface-mount<\/td>-<\/td>-<\/td><\/tr>\n
        IRF540NPBF<\/td>Infineon<\/td>100V\/33A\/44m\u03a9, higher voltage, lower current<\/td>-<\/td>-<\/td><\/tr>\n
        IRLZ44NPBF<\/td>Infineon<\/td>Logic-level, 55V\/47A, 22m\u03a9 @ 5V VGS<\/td>-<\/td>-<\/td><\/tr>\n
        IRFB3207PBF<\/td>Infineon<\/td>75V\/210A\/2.8m\u03a9, even lower RDS(on), TO-220<\/td>-<\/td>-<\/td><\/tr>\n
        FDB8832<\/td>onsemi<\/td>32V\/120A\/1.8m\u03a9, ultra-low RDS(on), I-PAK<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        IRF3205PBF is a 55V\/110A N-channel MOSFET from Infineon in TO-220 with 8m\u03a9 RDS(on). The IRF3205SPBF is the D2PAK surface-mount version. The IRLZ44N provides logic-level 55V\/47A with 22m\u03a9 for 5V gate drive. The IRF1405 offers 55V\/169A with 5.3m\u03a9 for extreme current applications. The FDP8860 from onsemi provides 60V\/80A with 7.5m\u03a9 in TO-220. For lower voltage, IRF3808 provides 75V\/140A with 2.2m\u03a9. The IPT004N03L from Infineon offers 30V\/120A with 0.4m\u03a9 for synchronous buck converters.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7952","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7952"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7952\/revisions"}],"predecessor-version":[{"id":8223,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7952\/revisions\/8223"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7952"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7952"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7952"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7952"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}