{"id":7920,"date":"2026-06-28T04:28:46","date_gmt":"2026-06-28T04:28:46","guid":{"rendered":"https:\/\/materialparts.com\/irf9540npbf-2\/"},"modified":"2026-06-28T11:38:37","modified_gmt":"2026-06-28T11:38:37","slug":"irf9540npbf-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf9540npbf-2\/","title":{"rendered":"IRF9540NPBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF9540NPBF from Infineon Technologies is a -100V P-channel power MOSFET with -23A continuous drain current, 117m\u03a9 RDS(on), and 140W power dissipation in a TO-220 through-hole package, commonly used as a high-side switch.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0642\u0637\u0628\u064a\u0629<\/td>\nP-Channel<\/td>\n<\/tr>\n
VDS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641-\u0627\u0644\u0645\u0635\u0631\u0641)<\/td>\n-100V<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n-23A @ TC=25\u00b0C, -14A @ TC=100\u00b0C<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n117m\u03a9 @ VGS=-10V<\/td>\n<\/tr>\n
VGS(th) (\u0639\u062a\u0628\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n-2V to -4V @ ID=-250\u00b5A<\/td>\n<\/tr>\n
VGS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n\u00b120V max<\/td>\n<\/tr>\n
Qg (\u0625\u062c\u0645\u0627\u0644\u064a \u0634\u062d\u0646\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n64.7nC typical @ VGS=-10V<\/td>\n<\/tr>\n
Qgd (Gate-Drain Charge)<\/td>\n34nC typical<\/td>\n<\/tr>\n
Ciss (\u0633\u0639\u0629 \u0627\u0644\u0625\u062f\u062e\u0627\u0644)<\/td>\n1300pF @ VDS=-25V<\/td>\n<\/tr>\n
gfs (Forward Transconductance)<\/td>\n5.3S typical<\/td>\n<\/tr>\n
PD (Power Dissipation)<\/td>\n140W @ TC=25\u00b0C (Infineon), 150W (Vishay)<\/td>\n<\/tr>\n
R\u03b8JC (Junction-to-Case)<\/td>\n1.1\u00b0C\/W<\/td>\n<\/tr>\n
Avalanche Energy (Single Pulse)<\/td>\n84mJ (Infineon), 640mJ (Vishay)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +150\u00b0C (or +175\u00b0C for some versions)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-220-3 (through-hole, tab=drain)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • -100V P-channel power MOSFET<\/li>\n
  • Low RDS(on): 117m\u03a9 at VGS=-10V<\/li>\n
  • High current: -23A continuous<\/li>\n
  • Avalanche rated for rugged switching<\/li>\n
  • Fast switching speed<\/li>\n
  • Complementary N-channel: IRF540NPBF<\/li>\n
  • TO-220 package for easy heatsink mounting<\/li>\n
  • 175\u00b0C maximum junction temperature<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side power switching<\/li>\n
    • H-bridge motor drive (with IRF540N)<\/li>\n
    • Load switch for battery-powered systems<\/li>\n
    • DC-DC converter (buck regulator high-side)<\/li>\n
    • Reverse polarity protection<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF9540NPBF from Infineon Technologies is a -100V P-channel power MOSFET with -23A continuous drain current, 117m\u03a9 RDS(on), and 140W power dissipation in a TO-220 through-hole package, commonly used as a high-side switch. Key Specifications Polarity P-Channel VDS (Drain-Source Voltage) -100V ID (Continuous Drain Current) -23A @ TC=25\u00b0C, -14A @ TC=100\u00b0C RDS(on) Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[21,13],"tags":[],"chip_brand":[173],"class_list":["post-7920","post","type-post","status-publish","format-standard","hentry","category-audio-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"-100V P-ch MOSFET, -23A, 117m\u03a9 Rds, 140W, TO-220","date_code":"","package_case":"TO-220-3 (15.6 x 10.6 x 4.6mm, through-hole, tab=drain)","in_stock":2713,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf9540npbf.pdf","price":"$0.51 @ 1ku","product_introduction":"The IRF9540NPBF from Infineon Technologies (formerly International Rectifier) is a -100V P-channel HEXFET power MOSFET rated for -23A continuous drain current with 117m\u03a9 maximum on-resistance at VGS=-10V. As a P-channel device, it is the natural choice for high-side switching: the source connects to the positive rail, and pulling the gate below the source by 10V turns the MOSFET on. This eliminates the need for a gate driver or bootstrap circuit required by N-channel high-side switches. The complementary N-channel IRF540NPBF (100V, 33A, 44m\u03a9) pairs perfectly in H-bridge motor drive and push-pull amplifier circuits. The 140W power dissipation rating (at TC=25\u00b0C) with 1.1\u00b0C\/W junction-to-case thermal resistance allows substantial current handling with adequate heatsinking. The avalanche rating provides protection against inductive kickback from motors and solenoids. The PBF suffix denotes the lead-free (Pb-free) version in TO-220 package.","working_principle":"The IRF9540NPBF is a P-channel enhancement-mode MOSFET. Unlike N-channel MOSFETs where VGS must be positive relative to the source, the P-channel requires VGS to be negative (gate below source) to create a conductive channel. When VGS = 0V (gate = source), the MOSFET is off. When VGS reaches the threshold (-2V to -4V), an inversion layer forms under the gate oxide, creating a conductive channel between source and drain. At VGS = -10V, the channel is fully enhanced, and RDS(on) drops to 117m\u03a9 max. In a high-side switch configuration, the source is connected to the positive supply rail (e.g., 12V), and the load is between the drain and ground. To turn on the MOSFET, the gate must be pulled at least 10V below the source, i.e., to 12V - 10V = 2V or lower. A simple GPIO-controlled NPN transistor can pull the gate to ground, providing VGS = -12V for full enhancement. When the GPIO goes low, the NPN turns off, and a pull-up resistor (10k\u03a9) pulls the gate to the source (12V), making VGS = 0V and turning the MOSFET off. The 64.7nC total gate charge means the gate capacitance requires this amount of charge to switch; with a 10k\u03a9 pull-up, the turn-off time is approximately R \u00d7 Ciss = 10k\u03a9 \u00d7 1300pF \u2248 13\u00b5s, which is acceptable for load switching but may need a gate driver for PWM applications.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. Pull Gate below Source to turn ON the P-channel MOSFET. Apply VGS < -4V (-10V recommended for RDS(on) of 0.117\u03a9). Maximum VGS rating is \u00b120V. Gate charge is 62nC typical. For logic-level drive, use a pull-up resistor to Source for OFF state and a BJT or driver to pull Gate low for ON state.<\/td><\/tr>\n
      2<\/td>Drain<\/td>Power Output<\/td>Drain terminal connected to the load. Rated for -100V VDS and -19A continuous drain current at TC=25\u00b0C. The tab of TO-220 package is electrically connected to Drain. On-resistance is 117m\u03a9 typ at VGS=-10V. Maximum power dissipation 150W at TC=25\u00b0C with proper heatsinking.<\/td><\/tr>\n
      3<\/td>Source<\/td>Power Output<\/td>Source terminal typically connected to the positive supply for high-side switching. Internal body diode conducts from Drain to Source. Suitable for reverse-polarity protection, battery disconnect, and high-side load switching up to 100V. Body diode reverse recovery time is approximately 180ns.<\/td><\/tr>\n<\/table>\n

      IRF9540NPBF pin assignment (TO-220-3, front view, pins down): Pin 1 (left) = Gate, Pin 2 (center) = Drain\/Tab, Pin 3 (right) = Source. P-channel MOSFET for high-side switching: Gate pulled to GND = ON, Gate at Source = OFF. The tab is connected to Drain. Complementary N-channel: IRF540N (100V\/33A). For lower on-resistance P-channel at 60V, consider FQP47P06 (60V\/47A\/26m\u03a9).<\/p>","application_scenarios":"

        \n
      • High-Side Switch:<\/strong> Source to +12V battery; gate driven by NPN to GND; load between drain and GND; simple on\/off control<\/li>\n
      • H-Bridge:<\/strong> IRF9540N (high-side) + IRF540N (low-side) per half-bridge; bidirectional DC motor control<\/li>\n
      • Reverse Polarity:<\/strong> Source to battery+, drain to load; gate tied to source via zener; blocks reverse current automatically<\/li>\n
      • Buck Converter:<\/strong> High-side P-ch switch; VGS driven by controller; 117m\u03a9 at 5A = 2.9W conduction loss<\/li>\n
      • Battery Disconnect:<\/strong> Source to battery+, drain to system; MCU-controlled NPN drives gate; 0.5\u00b5A gate leakage preserves battery<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        IRF9540NSPBF<\/td>Infineon<\/td>Same in D2PAK (TO-263) surface-mount<\/td>-<\/td>-<\/td><\/tr>\n
        FQP27P06<\/td>onsemi<\/td>-60V, -27A, 70m\u03a9, lower voltage, lower Rds<\/td>-<\/td>-<\/td><\/tr>\n
        IRF4905PBF<\/td>Infineon<\/td>-55V, -74A, 20m\u03a9, lower voltage, much higher current<\/td>-<\/td>-<\/td><\/tr>\n
        NDP6020P<\/td>onsemi<\/td>-20V, -24A, 45m\u03a9, logic-level gate<\/td>-<\/td>-<\/td><\/tr>\n
        SIHF9540-E3<\/td>Vishay<\/td>Equivalent, -100V, -19A, 200m\u03a9, RoHS<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        IRF9540NPBF is a -100V\/-19A P-channel MOSFET from Infineon in TO-220 with 117m\u03a9 RDS(on). The FQP47P06 from onsemi provides -60V\/-47A with 26m\u03a9 for lower on-resistance. The IRF9Z34N offers -60V\/-12A with 100m\u03a9 in a smaller footprint. The IRF4905PBF provides -55V\/-74A with 78m\u03a9 for higher current. The STD20P06 from ST offers -60V\/-20A with 65m\u03a9 in D2PAK. For surface-mount, IRF9540NSPBF provides the same in D2PAK. Complementary N-channel: IRF540N (100V\/33A).<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7920","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7920"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7920\/revisions"}],"predecessor-version":[{"id":8237,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7920\/revisions\/8237"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7920"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7920"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7920"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7920"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}