{"id":7907,"date":"2026-06-28T04:21:20","date_gmt":"2026-06-28T04:21:20","guid":{"rendered":"https:\/\/materialparts.com\/2n7002k-7\/"},"modified":"2026-06-28T11:38:59","modified_gmt":"2026-06-28T11:38:59","slug":"2n7002k-7","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/2n7002k-7\/","title":{"rendered":"2N7002K-7"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The 2N7002K-7 is a 60V N-channel enhancement-mode small-signal MOSFET from Diodes Incorporated with 380mA drain current, 2\u03a9 RDS(on), ESD protection, and logic-level gate drive in a SOT-23-3 package.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641-\u0627\u0644\u0645\u0635\u0631\u0641)<\/td>\n60V<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n380mA @ TA=25\u00b0C (1 sq in pad)<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n2.0\u03a9 @ VGS=10V, ID=500mA<\/td>\n<\/tr>\n
RDS(on) Max (Logic Level)<\/td>\n3.0\u03a9 @ VGS=5V, ID=50mA<\/td>\n<\/tr>\n
VGS(th) (\u0639\u062a\u0628\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n1.0V to 2.5V @ ID=250\u00b5A<\/td>\n<\/tr>\n
VGS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n\u00b120V max<\/td>\n<\/tr>\n
Qg (\u0625\u062c\u0645\u0627\u0644\u064a \u0634\u062d\u0646\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n0.3nC typical @ VGS=4.5V<\/td>\n<\/tr>\n
Ciss (\u0633\u0639\u0629 \u0627\u0644\u0625\u062f\u062e\u0627\u0644)<\/td>\n30pF typical @ VDS=25V<\/td>\n<\/tr>\n
\u062a\u0635\u0646\u064a\u0641 ESD (HBM)<\/td>\n2000V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n370mW (minimum pad), 540mW (1 sq in pad)<\/td>\n<\/tr>\n
R\u03b8JA<\/td>\n357\u00b0C\/W (minimum pad), 240\u00b0C\/W (1 sq in pad)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-23-3 (2.9 x 1.3mm, surface mount)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 60V N-channel enhancement-mode MOSFET<\/li>\n
  • ESD protected gate (2000V HBM)<\/li>\n
  • Low RDS(on): 2\u03a9 max at VGS=10V<\/li>\n
  • Logic-level gate drive (5V compatible)<\/li>\n
  • Extremely low gate charge: 0.3nC typical<\/li>\n
  • Low input capacitance: 30pF typical<\/li>\n
  • Halogen-free and BFR-free<\/li>\n
  • Industry-standard SOT-23-3 footprint<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Low-side load switch<\/li>\n
    • Level shifting circuits<\/li>\n
    • DC-DC converter switching<\/li>\n
    • Portable device power management<\/li>\n
    • MCU GPIO load driving<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The 2N7002K-7 is a 60V N-channel enhancement-mode small-signal MOSFET from Diodes Incorporated with 380mA drain current, 2\u03a9 RDS(on), ESD protection, and logic-level gate drive in a SOT-23-3 package. Key Specifications VDS (Drain-Source Voltage) 60V ID (Continuous Drain Current) 380mA @ TA=25\u00b0C (1 sq in pad) RDS(on) Max 2.0\u03a9 @ VGS=10V, ID=500mA RDS(on) Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[21,13],"tags":[],"chip_brand":[144],"class_list":["post-7907","post","type-post","status-publish","format-standard","hentry","category-audio-ics","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"60V N-ch MOSFET, 380mA, 2\u03a9 Rds, ESD 2kV, logic-level, SOT-23-3","date_code":"","package_case":"SOT-23-3 (TO-236-3, 2.9 x 1.3 x 1.0mm, surface mount)","in_stock":20919,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/2N7002K.pdf","price":"$0.04 @ 3ku","product_introduction":"The 2N7002K-7 from Diodes Incorporated is a 60V N-channel enhancement-mode small-signal MOSFET in an SOT-23-3 surface-mount package. It offers 380mA continuous drain current with 2\u03a9 maximum on-resistance at VGS=10V, and 3\u03a9 at VGS=5V, making it compatible with both 5V and 3.3V logic-level gate drive. The device features built-in ESD protection rated at 2000V HBM on the gate, protecting against handling and assembly damage. The extremely low 0.3nC total gate charge and 30pF input capacitance enable fast switching with minimal drive power, allowing direct MCU GPIO drive without gate driver ICs. The -7 suffix denotes tape-and-reel packaging with 3000 units per reel. The K suffix distinguishes this improved version from the classic 2N7002, offering lower RDS(on) and ESD protection.","working_principle":"The 2N7002K-7 is an enhancement-mode N-channel MOSFET that remains off (non-conducting) when VGS = 0V. When VGS exceeds the threshold voltage (1.0V to 2.5V), an inversion layer forms under the gate oxide, creating a conductive channel between drain and source. At VGS = 5V (logic level), the channel is partially enhanced, giving RDS(on) of 3\u03a9 max\u2014sufficient for switching loads up to 100mA with minimal voltage drop. At VGS = 10V, the channel is fully enhanced, and RDS(on) drops to 2\u03a9 max. The 0.3nC gate charge means the gate capacitance can be charged and discharged very quickly, enabling switching times in the nanosecond range. With an MCU GPIO pin capable of sourcing\/sinking 4-8mA, the gate can transition from 0V to 3.3V or 5V in approximately Qg \u00d7 \u0394V \/ I = 0.3nC \u00d7 5V \/ 4mA \u2248 0.4ns (theoretical minimum; actual switching limited by PCB parasitics). The ESD protection on the gate consists of clamping structures that shunt overvoltage transients away from the thin gate oxide, preventing dielectric breakdown during handling.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate control terminal. ESD-protected gate (K suffix) with integrated back-to-back diodes for \u00b12kV HBM protection. Logic-level threshold VGS(th) = 1.0-2.5V allows direct drive from 3.3V and 5V microcontrollers. Gate charge Qg = 3.9nC typical enables fast switching.<\/td><\/tr>\n
      2<\/td>Source<\/td>Power Output<\/td>Source terminal typically connected to ground in low-side switching configuration. Continuous drain current 300mA at TA=25\u00b0C. Internal body diode forward voltage VSD \u2248 0.95V. On-resistance RDS(on) = 1.2\u03a9 max at VGS=10V, ID=200mA.<\/td><\/tr>\n
      3<\/td>Drain<\/td>Power Output<\/td>Drain terminal connects to the load through a pull-up resistor or directly. Maximum VDS = 60V provides good voltage margin for 5V-24V switching applications. Drain-source leakage current is 1\u00b5A max at VDS=48V, VGS=0V. Suitable for relay driving, LED control, and level shifting.<\/td><\/tr>\n<\/table>\n

      2N7002K-7 pin assignment (SOT-23-3, top view): Pin 1 (left) = Gate, Pin 2 (center, tab) = Source, Pin 3 (right) = Drain. The K suffix adds ESD protection on the gate. The non-ESD version is 2N7002-7. For level-shifting applications, BSS138 offers lower threshold voltage (0.8V) for sub-3.3V operation. For higher current, SI2302CDS provides 2.2A with 62m\u03a9 RDS(on).<\/p>","application_scenarios":"

        \n
      • MCU Load Switch:<\/strong> 5V or 3.3V GPIO directly drives gate; 380mA capability switches LEDs, relays (via coil driver), or small motors<\/li>\n
      • Level Shifter:<\/strong> Open-drain configuration shifts 3.3V logic to 5V or higher; pull-up resistor on drain sets HIGH level<\/li>\n
      • Power Gating:<\/strong> Low-side switch disconnects peripheral VCC rail; 2\u03a9 at 100mA = only 200\u00b5V drop (negligible)<\/li>\n
      • DC-DC Switch:<\/strong> 0.3nC Qg supports 1MHz+ switching in tiny buck\/boost converters at <100mA load<\/li>\n
      • Battery Protection:<\/strong> 60V standoff handles 2-cell LiPo (8.4V) with huge margin; gate pull-down ensures off during sleep<\/li>\n<\/ul>","alternative_models":"\n
        Model<\/th>Manufacturer<\/th>Key Difference<\/th>Package<\/th>Specs<\/th><\/tr>\n
        2N7002ET1G<\/td>onsemi<\/td>Same class, 60V\/300mA, SOT-23-3, equivalent<\/td>-<\/td>-<\/td><\/tr>\n
        BSS138-7-F<\/td>Diodes Inc<\/td>50V\/200mA, lower threshold (1.5V), SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n
        2N7002K-T1-GE3<\/td>Vishay<\/td>Same class, 60V\/300mA, SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n
        DMN2075U-7<\/td>Diodes Inc<\/td>20V\/4.2A, much lower Rds, SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n
        SI2302DS-T1-GE3<\/td>Vishay<\/td>20V\/2.2A, logic-level, lower Rds, SOT-23-3<\/td>-<\/td>-<\/td><\/tr>\n<\/table>\n

        2N7002K-7 is a 60V\/300mA N-channel MOSFET from onsemi in SOT-23-3 with ESD protection. The 2N7002-7 provides the same without ESD gate protection. The BSS138-7-F offers lower VGS(th) of 1.0V for sub-3.3V operation. The SI2302CDS provides 20V\/2.2A with 62m\u03a9 for higher current switching. The DMN2075U offers 20V\/750mA from Diodes Inc. The AO3400A from Alpha & Omega provides 30V\/5A with 26m\u03a9. For dual N-channel, 2N7002DW provides two MOSFETs in SOT-363.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7907","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7907"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7907\/revisions"}],"predecessor-version":[{"id":8246,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7907\/revisions\/8246"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7907"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7907"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7907"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7907"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}