{"id":7824,"date":"2026-06-27T04:03:39","date_gmt":"2026-06-27T04:03:39","guid":{"rendered":"https:\/\/materialparts.com\/sts5pf30l-2\/"},"modified":"2026-06-27T04:03:39","modified_gmt":"2026-06-27T04:03:39","slug":"sts5pf30l-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/sts5pf30l-2\/","title":{"rendered":"STS5PF30L"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The STS5PF30L is a P-Channel Power MOSFET manufactured by STMicroelectronics using its proprietary STripFET\u2122 (Single Feature Size) strip-based process technology. Housed in a compact SO-8 (8-SOIC) surface-mount package, this device delivers excellent conduction performance with an ultra-low RDS(on)<\/sub> of 45 m\u03a9 (typ) at VGS<\/sub> = 10V and supports a continuous drain current of 5A at 30V drain-source voltage. It is optimized for high-efficiency switching applications in space-constrained designs, offering high packing density, rugged avalanche characteristics, and excellent manufacturing reproducibility.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parameter<\/strong><\/td>\nValue<\/strong><\/td>\n<\/tr>\n
\u0627\u0644\u0634\u0631\u0643\u0629 \u0627\u0644\u0645\u0635\u0646\u0639\u0629<\/td>\nSTMicroelectronics<\/td>\n<\/tr>\n
\u0646\u0648\u0639 FET<\/td>\nP-Channel, Metal Oxide (STripFET\u2122)<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS<\/sub>)<\/td>\n30V<\/td>\n<\/tr>\n
Continuous Drain Current (ID<\/sub>)<\/td>\n5A @ TC<\/sub> = 25\u00b0C<\/td>\n<\/tr>\n
Pulsed Drain Current (IDM<\/sub>)<\/td>\n20A<\/td>\n<\/tr>\n
RDS(on)<\/sub> (typ)<\/td>\n45 m\u03a9 @ VGS<\/sub> = 10V, ID<\/sub> = 2.5A<\/td>\n<\/tr>\n
RDS(on)<\/sub> (max)<\/td>\n55 m\u03a9 @ VGS<\/sub> = 10V; 65 m\u03a9 @ VGS<\/sub> = 4.5V<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th)<\/sub>)<\/td>\n1.0V \u2013 2.5V (typ 1.6V) @ ID<\/sub> = 250\u00b5A<\/td>\n<\/tr>\n
Gate-Source Voltage (VGS<\/sub>)<\/td>\n\u00b116V<\/td>\n<\/tr>\n
Total Gate Charge (Qg<\/sub>)<\/td>\n12.5 \u2013 16 nC @ VDD<\/sub> = 24V, ID<\/sub> = 5A, VGS<\/sub> = 5V<\/td>\n<\/tr>\n
Input Capacitance (Ciss<\/sub>)<\/td>\n1350 pF @ V\u062f\u0633<\/sub> = 25V, f = 1 MHz<\/td>\n<\/tr>\n
Output Capacitance (Coss<\/sub>)<\/td>\n490 pF<\/td>\n<\/tr>\n
Reverse Transfer Capacitance (Crss<\/sub>)<\/td>\n130 pF<\/td>\n<\/tr>\n
Power Dissipation (PTOT<\/sub>)<\/td>\n2.5W @ TC<\/sub> = 25\u00b0C<\/td>\n<\/tr>\n
Thermal Resistance (R\u03b8JA<\/sub>)<\/td>\n50\u00b0C\/W<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u062a\u0642\u0627\u0637\u0639 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSO-8 (8-SOIC, 3.90mm width)<\/td>\n<\/tr>\n
\u0646\u0648\u0639 \u0627\u0644\u062a\u0631\u0643\u064a\u0628<\/td>\nSurface Mount (SMT)<\/td>\n<\/tr>\n
Packing<\/td>\nTape & Reel<\/td>\n<\/tr>\n
RoHS Compliance<\/td>\nYes (Ecopack2)<\/td>\n<\/tr>\n
\u062a\u0635\u0646\u064a\u0641 MSL<\/td>\nMSL 1 (Unlimited)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • STripFET\u2122 Technology:<\/strong> STMicroelectronics’ proprietary single feature size strip-based process delivers extremely high packing density for low RDS(on)<\/sub> and excellent manufacturing reproducibility.<\/li>\n
  • Ultra-Low On-Resistance:<\/strong> Typical RDS(on)<\/sub> of 45 m\u03a9 at VGS<\/sub> = 10V minimizes conduction losses and improves system efficiency.<\/li>\n
  • Low Gate Charge:<\/strong> Total gate charge of only 12.5 nC enables fast switching and reduced gate driver power requirements.<\/li>\n
  • Low Threshold Voltage:<\/strong> Gate threshold voltage as low as 1.0V (typ 1.6V) allows direct drive from logic-level signals without additional level shifting.<\/li>\n
  • Rugged Avalanche Performance:<\/strong> High avalanche ruggedness ensures reliable operation in demanding switching environments with inductive loads.<\/li>\n
  • Wide Operating Temperature:<\/strong> Supports junction temperatures from -55\u00b0C to +150\u00b0C, suitable for industrial and automotive-grade applications.<\/li>\n
  • Compact SO-8 Package:<\/strong> Industry-standard 8-pin SOIC package enables easy automated surface mount assembly and compatibility with standard PCB footprints.<\/li>\n
  • Fast Switching Speed:<\/strong> Turn-on delay of 25 ns and rise time of 35 ns (typ) support high-frequency switching applications.<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Power Switching Circuits:<\/strong> Ideal as a load switch or power path controller in portable electronics, battery-powered devices, and consumer electronics where low on-resistance and compact size are critical.<\/li>\n
    • DC-DC Converters:<\/strong> Used in synchronous buck\/boost converter topologies as a high-side switch, leveraging its low RDS(on)<\/sub> to maximize conversion efficiency.<\/li>\n
    • Motor Drive Applications:<\/strong> Suitable for low-voltage DC motor control in fans, pumps, and small actuators, with rugged avalanche characteristics handling inductive kickback.<\/li>\n
    • Load Management & Hot-Swap:<\/strong> Acts as an electronic fuse or OR-ing diode replacement in multi-rail power supply systems, providing reverse polarity protection and inrush current limiting.<\/li>\n
    • LCD Display Bias & LED Drivers:<\/strong> Serves as a level shifter or power switch in display backlight circuits and LED driver applications requiring logic-level gate drive.<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The STS5PF30L is a P-Channel Power MOSFET manufactured by STMicroelectronics using its proprietary STripFET\u2122 (Single Feature Size) strip-based process technology. Housed in a compact SO-8 (8-SOIC) surface-mount package, this device delivers excellent conduction performance with an ultra-low RDS(on) of 45 m\u03a9 (typ) at VGS = 10V and supports a continuous drain current of […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[142],"class_list":["post-7824","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-st"],"acf":{"brief_explanation":"P-Channel 30V 5A Power MOSFET, 45mOhm RDS(on), SO-8 package, STripFET technology","date_code":"","package_case":"SO-8 (8-SOIC, 5.0 x 4.0 x 1.75 mm)","in_stock":8457,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/sts5pf30l.pdf","price":"$0.47 @ 2.5ku","product_introduction":"The STS5PF30L is a P-Channel Power MOSFET from STMicroelectronics, built on the company's proprietary STripFET (Single Feature Size) strip-based process technology. This advanced manufacturing approach delivers extremely high cell packing density, resulting in an industry-leading combination of low on-resistance and rugged avalanche characteristics within a compact SO-8 package.\n\nWith a drain-source voltage rating of 30V and continuous drain current capability of 5A at 25 degrees C, the STS5PF30L is optimized for power switching and load management applications in space-constrained designs. The device features a typical on-resistance of only 45 milliohm at VGS = 10V, significantly reducing conduction losses and improving overall system efficiency.\n\nThe STS5PF30L offers a low gate threshold voltage (1.0V to 2.5V range, 1.6V typical), enabling direct logic-level drive without additional level-shifting circuitry. Combined with a total gate charge of just 12.5 nC, this device achieves fast switching transitions (25 ns turn-on delay, 35 ns rise time) while requiring minimal gate drive power.\n\nOperating across an extended junction temperature range of -55 degrees C to +150 degrees C, the STS5PF30L is qualified for industrial-grade applications. The industry-standard SO-8 footprint ensures drop-in compatibility with existing PCB layouts, while the MSL 1 moisture sensitivity rating eliminates the need for bake-out procedures before reflow soldering.","working_principle":"

      P-Channel MOSFET Operation<\/h3>

      The STS5PF30L operates as a voltage-controlled switch using an insulated gate structure. When a negative gate-to-source voltage (more negative than the threshold voltage VGS(th)) is applied, an inversion layer (p-channel) forms beneath the gate oxide, creating a conductive path between the source and drain regions.<\/p>

      STripFET Cell Architecture<\/h3>

      The device utilizes STMicroelectronics proprietary STripFET technology, which employs a unique strip-based cell layout rather than conventional hexagonal or square cell geometries. This architecture maximizes the channel width per unit area, achieving extremely high cell packing density. The result is a significantly lower specific on-resistance compared to traditional MOSFET designs at the same voltage rating.<\/p>

      Conduction State<\/h3>

      In the on-state, current flows from source to drain (for P-channel, conventional current direction is reversed compared to N-channel). The on-resistance RDS(on) consists of three components: channel resistance, drift region resistance, and substrate resistance. The STripFET optimization minimizes all three components simultaneously through its unique cell geometry and epitaxial layer design.<\/p>

      Switching Behavior<\/h3>

      During switching transitions, the gate charge (Qg) must be supplied or removed to charge\/discharge the gate capacitance. The low total gate charge of 12.5 nC enables fast transitions. The Miller plateau region (where gate-drain charge Qgd = 3 nC is transferred) determines the voltage slew rate and switching losses. The low Crss (130 pF) minimizes Miller effect, further improving switching performance.<\/p>","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source (S1)<\/td>Power<\/td>Source terminal - connected to the p+ source region; first of three parallel source pins<\/td><\/tr>
      2<\/td>Source (S2)<\/td>Power<\/td>Source terminal - parallel connection for reduced parasitic resistance<\/td><\/tr>
      3<\/td>Source (S3)<\/td>Power<\/td>Source terminal - third parallel source connection<\/td><\/tr>
      4<\/td>Gate (G)<\/td>Control<\/td>Gate terminal - polysilicon gate electrode; controls channel conductivity via applied voltage<\/td><\/tr>
      5<\/td>Drain (D1)<\/td>Power<\/td>Drain terminal - first of four parallel drain pins; current exits through drain in on-state<\/td><\/tr>
      6<\/td>Drain (D2)<\/td>Power<\/td>Drain terminal - parallel connection for current handling and thermal distribution<\/td><\/tr>
      7<\/td>Drain (D3)<\/td>Power<\/td>Drain terminal - parallel connection for current handling and thermal distribution<\/td><\/tr>
      8<\/td>Drain (D4)<\/td>Power<\/td>Drain terminal - fourth parallel drain connection; tab also connected to drain<\/td><\/tr><\/table>

      Note: For P-Channel MOSFET, actual polarity of voltages and currents is reversed compared to N-Channel devices. Source is at higher potential than drain in normal operation.<\/em><\/p>","application_scenarios":"

      • Power Load Switching:<\/strong> Primary use as a high-side load switch in portable devices, tablets, and IoT platforms. The low RDS(on) minimizes voltage drop across the switch, while the logic-level gate threshold enables direct MCU GPIO control for power sequencing and peripheral enable\/disable functions.<\/li>
      • Synchronous DC-DC Converters:<\/strong> Employed as the high-side synchronous rectifier or main switch in buck\/boost converter topologies. The combination of low RDS(on) and low gate charge maximizes efficiency across both light-load and heavy-load conditions in 5V to 24V input conversion systems.<\/li>
      • Battery Protection and Power Path Management:<\/strong> Used in battery-powered systems for reverse polarity protection, charge\/discharge path control, and automatic power source selection (battery vs. adapter). The low threshold voltage enables operation even as battery voltage drops.<\/li>
      • Motor Drive and Actuator Control:<\/strong> Controls small DC motors in fans, pumps, and precision actuators. The rugged avalanche rating handles inductive flyback energy during turn-off, while fast switching minimizes EMI in PWM-driven applications.<\/li>
      • Display Backlight and LED Power Control:<\/strong> Acts as a power switch or current path controller in LCD backlight LED driver circuits, where efficient power delivery and compact footprint are essential for thin display modules.<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Key Differences<\/th><\/tr>
        STMicroelectronics<\/td>STS5P3LLH6<\/td>SO-8<\/td>Newer STripFET H6 generation; 48 milliohm RDS(on) typ; improved Ciss (639pF); VGS max +\/-20V<\/td><\/tr>
        Alpha & Omega (AOS)<\/td>AO4411<\/td>SOIC-8<\/td>P-CH 30V\/8A; lower 32 milliohm RDS(on); higher current rating; lower Ciss (760pF)<\/td><\/tr>
        Alpha & Omega (AOS)<\/td>AO4459<\/td>SOIC-8<\/td>P-CH 30V\/6.5A; 46 milliohm RDS(on); lower gate charge (4.6nC); Crss 65pF<\/td><\/tr>
        Alpha & Omega (AOS)<\/td>AO4449<\/td>SO-8<\/td>P-CH 30V\/7A; 34 milliohm RDS(on); 16nC Qg; similar switching characteristics<\/td><\/tr>
        Infineon \/ IR<\/td>IRF7205TRPBF<\/td>SO-8<\/td>P-CH 20V\/7.4A; different VDS rating; lower RDS(on); legacy HEXFET technology<\/td><\/tr>
        STMicroelectronics<\/td>STT4P3LLH6<\/td>SO-8<\/td>P-CH 30V\/4A; smaller current rating; STripFET H6; similar footprint<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7824","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7824"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7824\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7824"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7824"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7824"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7824"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}